JP4997809B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 238000009792 diffusion process Methods 0.000 claims description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 229910052735 hafnium Inorganic materials 0.000 claims description 21
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 21
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 17
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 238000005121 nitriding Methods 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000002265 prevention Effects 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 7
- 229910052746 lanthanum Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 229910052727 yttrium Inorganic materials 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- 229910004129 HfSiO Inorganic materials 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- -1 hafnium nitride Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
以下、図11、図12を用いて説明する。
図11は、ゲート部の断面模式図である。
図1は本実施の形態の半導体装置の特徴部分であるMOSFETのゲート部の断面模式図である。図1の構成は以下の通りである。半導体基板(図示せず)上に、酸化膜12および高誘電率絶縁膜13が順に形成されている。その上に、拡散防止膜10が形成されている。拡散防止膜10上には、高誘電率絶縁膜13よりSi組成が大きい絶縁膜14が形成されている。さらに、その上に、ポリシリコンより構成されるゲート電極15が形成されている。尚、例として酸化膜12には、SiO2膜、高誘電率絶縁膜13には、HfO2膜、拡散防止膜10には、窒化シリコン(SiN)膜(膜厚0.2nm〜0.5nm)、絶縁膜14には、ハフニウムシリケート(HfSiO)膜といった材料が挙げられる。
ゲート部に高誘電率絶縁膜13を有するMOSFETの製造工程において、ソース/ドレイン領域(図示せず)形成のために、不純物ドープ後に熱処理を行う。熱処理を行うと、高誘電率絶縁膜13中のHfなどの金属元素1が熱エネルギーを受けて拡散する。しかし、従来と異なり、金属元素1は拡散防止膜10によって、Si組成が大きい絶縁膜14への拡散が抑制され、金属元素1およびゲート電極15のSi元素との反応が抑制される。結果、しきい値のシフトを抑制することができるので、CMOSを動作させることができるようになる。
図2から図9は、MOSFETの各製造工程における断面模式図である。
以下、nMOSFETの製造方法について説明する。
同様に、高誘電率絶縁膜として、HfO2膜130を用いたが、HfO2膜130の他に、Hf、アルミニウム(Al)、ジルコニウム(Zr)、イットリウム(Y)、ランタン(La)、タンタル(Ta)のうち少なくとも1種類を含む酸化膜、酸窒化膜または窒化膜を用いた場合でも同様の効果を得ることが可能である。
前記高誘電率絶縁膜上に形成され、前記高誘電率絶縁膜から上層への金属元素の拡散を防止する拡散防止膜と、
前記拡散防止膜上に形成される絶縁膜と、
前記絶縁膜上に形成されるゲート電極と、
を有することを特徴とする半導体装置。
(付記4) 前記拡散防止膜の膜厚を0.2nm〜0.5nmとすることを特徴とする付記3記載の半導体装置。
(付記7) ゲート部に高誘電率絶縁膜を備えた半導体装置の製造方法において、
前記高誘電率絶縁膜上に、前記高誘電率絶縁膜から上層への金属元素の拡散を防止する拡散防止膜を形成する工程と、
前記拡散防止膜上に、絶縁膜を形成する工程と、
前記絶縁膜上に、ゲート電極を形成する工程と、
を有することを特徴とする半導体装置の製造方法。
(付記9) 前記高誘電率絶縁膜は、ハフニウム、アルミニウム、ジルコニウム、イットリウム、ランタン、タンタルのうち少なくとも1種類を含む酸化膜、酸窒化膜または窒化膜で構成されることを特徴とする付記7記載の半導体装置の製造方法。
(付記11) 前記拡散防止膜の膜厚を0.2nm〜0.5nmとすることを特徴とする付記10記載の半導体装置の製造方法。
(付記13) 前記絶縁膜は、シリコンを含み、かつハフニウム、アルミニウム、ジルコニウム、イットリウム、ランタン、タンタルのうち少なくとも1種類を含む酸化膜、酸窒化膜または窒化膜で構成されることを特徴とする付記7記載の半導体装置の製造方法。
10 拡散防止膜
12 酸化膜
13 高誘電率絶縁膜
14 絶縁膜
15 ゲート電極
Claims (5)
- ゲート部にハフニウム酸化膜を備えた半導体装置において、
前記ハフニウム酸化膜上に形成され、前記ハフニウム酸化膜から上層へのハフニウム元素の拡散を防止する窒化シリコン膜と、
前記窒化シリコン膜上に形成されるハフニウムシリコン酸化膜と、
前記ハフニウムシリコン酸化膜上に形成されるポリシリコンゲート電極と、
を有することを特徴とする半導体装置。 - 前記窒化シリコン膜の膜厚を0.2nm〜0.5nmとすることを特徴とする請求項1記載の半導体装置。
- ゲート部にハフニウム酸化膜を備えた半導体装置の製造方法において、
前記ハフニウム酸化膜上に、前記ハフニウム酸化膜から上層へのハフニウム元素の拡散を防止する窒化シリコン膜を形成する工程と、
前記窒化シリコン膜上に、ハフニウムシリコン酸化膜を形成する工程と、
前記ハフニウムシリコン酸化膜上に、ポリシリコンゲート電極を形成する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記窒化シリコン膜を形成する工程の前に、前記ハフニウム酸化膜上に窒化処理を行う工程をさらに有することを特徴とする請求項3記載の半導体装置の製造方法。
- 前記窒化シリコン膜を、MOCVD法もしくはALD法により形成することを特徴とする請求項3記載の半導体装置の製造方法。
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JP2006093276A JP4997809B2 (ja) | 2006-03-30 | 2006-03-30 | 半導体装置および半導体装置の製造方法 |
US11/518,317 US7893508B2 (en) | 2006-03-30 | 2006-09-11 | Semiconductor device and manufacturing method thereof |
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JP5787855B2 (ja) * | 2012-09-21 | 2015-09-30 | 株式会社東芝 | 半導体記憶装置 |
DE102017105729B4 (de) | 2017-03-16 | 2023-09-07 | Ivoclar Vivadent Ag | Artikulator sowie Artikulatorzusatzvorrichtung |
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JP2002134739A (ja) * | 2000-10-19 | 2002-05-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6891231B2 (en) * | 2001-06-13 | 2005-05-10 | International Business Machines Corporation | Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier |
JP4507232B2 (ja) * | 2003-03-24 | 2010-07-21 | ローム株式会社 | 半導体装置の製造方法 |
JP2005079223A (ja) * | 2003-08-29 | 2005-03-24 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2005159316A (ja) * | 2003-10-30 | 2005-06-16 | Tokyo Electron Ltd | 半導体装置の製造方法及び成膜装置並びに記憶媒体 |
JP2005277223A (ja) * | 2004-03-25 | 2005-10-06 | National Institute Of Advanced Industrial & Technology | 半導体装置およびその製造方法 |
JP2006019615A (ja) | 2004-07-05 | 2006-01-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2006086272A (ja) * | 2004-09-15 | 2006-03-30 | Fujitsu Ltd | 半導体装置 |
US7564108B2 (en) * | 2004-12-20 | 2009-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitrogen treatment to improve high-k gate dielectrics |
US20070096226A1 (en) * | 2005-10-31 | 2007-05-03 | Chun-Li Liu | MOSFET dielectric including a diffusion barrier |
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US20070232004A1 (en) | 2007-10-04 |
US7893508B2 (en) | 2011-02-22 |
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