JP4067284B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4067284B2
JP4067284B2 JP2001149620A JP2001149620A JP4067284B2 JP 4067284 B2 JP4067284 B2 JP 4067284B2 JP 2001149620 A JP2001149620 A JP 2001149620A JP 2001149620 A JP2001149620 A JP 2001149620A JP 4067284 B2 JP4067284 B2 JP 4067284B2
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JP
Japan
Prior art keywords
group
alkyl group
carbon atoms
general formula
substituent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001149620A
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English (en)
Japanese (ja)
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JP2002341539A (ja
JP2002341539A5 (https=
Inventor
健一郎 佐藤
邦彦 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001149620A priority Critical patent/JP4067284B2/ja
Priority to US10/093,411 priority patent/US6777160B2/en
Priority to TW091104604A priority patent/TW538317B/zh
Priority to KR1020020013339A priority patent/KR100773045B1/ko
Publication of JP2002341539A publication Critical patent/JP2002341539A/ja
Publication of JP2002341539A5 publication Critical patent/JP2002341539A5/ja
Application granted granted Critical
Publication of JP4067284B2 publication Critical patent/JP4067284B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2001149620A 2001-03-12 2001-05-18 ポジ型レジスト組成物 Expired - Fee Related JP4067284B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001149620A JP4067284B2 (ja) 2001-03-12 2001-05-18 ポジ型レジスト組成物
US10/093,411 US6777160B2 (en) 2001-03-12 2002-03-11 Positive-working resist composition
TW091104604A TW538317B (en) 2001-03-12 2002-03-12 Positive-working resist composition
KR1020020013339A KR100773045B1 (ko) 2001-03-12 2002-03-12 포지티브 레지스트 조성물

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001068849 2001-03-12
JP2001-68849 2001-03-12
JP2001149620A JP4067284B2 (ja) 2001-03-12 2001-05-18 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2002341539A JP2002341539A (ja) 2002-11-27
JP2002341539A5 JP2002341539A5 (https=) 2006-01-19
JP4067284B2 true JP4067284B2 (ja) 2008-03-26

Family

ID=26611062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001149620A Expired - Fee Related JP4067284B2 (ja) 2001-03-12 2001-05-18 ポジ型レジスト組成物

Country Status (1)

Country Link
JP (1) JP4067284B2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4193478B2 (ja) * 2001-12-03 2008-12-10 住友化学株式会社 スルホニウム塩及びその用途
US7303852B2 (en) 2001-12-27 2007-12-04 Shin-Etsu Chemical Co., Ltd. Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method
JP4448705B2 (ja) 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4579019B2 (ja) * 2005-03-17 2010-11-10 富士フイルム株式会社 ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法
JP4677293B2 (ja) * 2005-06-20 2011-04-27 富士フイルム株式会社 ポジ型感光性組成物及び該ポジ型感光性組成物を用いたパターン形成方法
JP4562628B2 (ja) 2005-09-20 2010-10-13 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP5140354B2 (ja) * 2006-09-19 2013-02-06 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP2009251037A (ja) * 2008-04-01 2009-10-29 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤
JP5352120B2 (ja) * 2008-05-12 2013-11-27 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物、および該化合物からなるクエンチャー
JP2011093868A (ja) * 2009-11-02 2011-05-12 Asahi Kasei Corp 環状構造を有するスルホニウム塩の製造方法
JP2010159256A (ja) * 2010-01-18 2010-07-22 Fujifilm Corp 感光性組成物に有用な酸及びその塩
JP2011008293A (ja) * 2010-09-15 2011-01-13 Fujifilm Corp ポジ型感光性組成物及び該ポジ型感光性組成物を用いたパターン形成方法
JP5737242B2 (ja) 2012-08-10 2015-06-17 信越化学工業株式会社 単量体、高分子化合物、レジスト組成物及びパターン形成方法
JP5780221B2 (ja) 2012-08-20 2015-09-16 信越化学工業株式会社 パターン形成方法
KR102776115B1 (ko) 2018-12-12 2025-03-07 제이에스알 가부시키가이샤 감광성 수지 조성물, 레지스트 패턴막의 제조 방법, 및 도금 조형물의 제조 방법
JP7416052B2 (ja) 2019-03-27 2024-01-17 Jsr株式会社 感光性樹脂組成物、レジストパターン膜の製造方法、メッキ造形物の製造方法、および錫銀メッキ造形物の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5554664A (en) * 1995-03-06 1996-09-10 Minnesota Mining And Manufacturing Company Energy-activatable salts with fluorocarbon anions
CA2187046A1 (fr) * 1996-10-03 1998-04-03 Alain Vallee Sulfonylimidures et sulfonylmethylures, leur utilisation comme photoinitiateur
JP3901342B2 (ja) * 1998-05-14 2007-04-04 富士フイルム株式会社 ポジ型感光性樹脂組成物
JP2001013688A (ja) * 1999-04-28 2001-01-19 Jsr Corp 感放射線性樹脂組成物
FR2809829B1 (fr) * 2000-06-05 2002-07-26 Rhodia Chimie Sa Nouvelle composition photosensible pour la fabrication de photoresist

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JP2002341539A (ja) 2002-11-27

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