JP4062940B2 - 製膜方法 - Google Patents
製膜方法 Download PDFInfo
- Publication number
- JP4062940B2 JP4062940B2 JP2002072086A JP2002072086A JP4062940B2 JP 4062940 B2 JP4062940 B2 JP 4062940B2 JP 2002072086 A JP2002072086 A JP 2002072086A JP 2002072086 A JP2002072086 A JP 2002072086A JP 4062940 B2 JP4062940 B2 JP 4062940B2
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- Prior art keywords
- film
- plasma
- gas
- plasma atmosphere
- film forming
- Prior art date
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- Expired - Fee Related
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- 239000012298 atmosphere Substances 0.000 claims description 41
- 238000006243 chemical reaction Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 24
- 239000011261 inert gas Substances 0.000 claims description 18
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims description 10
- 125000004429 atom Chemical group 0.000 claims description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- 238000007751 thermal spraying Methods 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
Images
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- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002072086A JP4062940B2 (ja) | 2002-03-15 | 2002-03-15 | 製膜方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002072086A JP4062940B2 (ja) | 2002-03-15 | 2002-03-15 | 製膜方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003268549A JP2003268549A (ja) | 2003-09-25 |
| JP2003268549A5 JP2003268549A5 (enExample) | 2005-09-02 |
| JP4062940B2 true JP4062940B2 (ja) | 2008-03-19 |
Family
ID=29202172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002072086A Expired - Fee Related JP4062940B2 (ja) | 2002-03-15 | 2002-03-15 | 製膜方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4062940B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7886688B2 (en) | 2004-09-29 | 2011-02-15 | Sekisui Chemical Co., Ltd. | Plasma processing apparatus |
| JP2008031541A (ja) * | 2006-07-31 | 2008-02-14 | Tokyo Electron Ltd | Ｃｖｄ成膜方法およびｃｖｄ成膜装置 |
| JP2012017478A (ja) * | 2010-07-06 | 2012-01-26 | Honjo Metal Co Ltd | リチウム積層部材およびその製造方法 |
| CN119265513B (zh) * | 2024-09-23 | 2025-09-09 | 广东彩龙新材料股份有限公司 | 一种新能源电池蓄能用镀氧化铝膜及其制备工艺 |
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