JP2003268549A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003268549A5 JP2003268549A5 JP2002072086A JP2002072086A JP2003268549A5 JP 2003268549 A5 JP2003268549 A5 JP 2003268549A5 JP 2002072086 A JP2002072086 A JP 2002072086A JP 2002072086 A JP2002072086 A JP 2002072086A JP 2003268549 A5 JP2003268549 A5 JP 2003268549A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma atmosphere
- forming method
- film forming
- reactive gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 22
- 238000000034 method Methods 0.000 claims 17
- 229910052751 metal Inorganic materials 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 12
- 230000001603 reducing effect Effects 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 10
- 239000011261 inert gas Substances 0.000 claims 6
- 125000004429 atom Chemical group 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000005266 casting Methods 0.000 claims 2
- 239000003054 catalyst Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- 230000001737 promoting effect Effects 0.000 claims 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims 1
- 229910052692 Dysprosium Inorganic materials 0.000 claims 1
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052693 Europium Inorganic materials 0.000 claims 1
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- 229910052689 Holmium Inorganic materials 0.000 claims 1
- 229910052765 Lutetium Inorganic materials 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 229910052777 Praseodymium Inorganic materials 0.000 claims 1
- 229910052771 Terbium Inorganic materials 0.000 claims 1
- 229910052775 Thulium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000000295 emission spectrum Methods 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 229910000043 hydrogen iodide Inorganic materials 0.000 claims 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002072086A JP4062940B2 (ja) | 2002-03-15 | 2002-03-15 | 製膜方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002072086A JP4062940B2 (ja) | 2002-03-15 | 2002-03-15 | 製膜方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003268549A JP2003268549A (ja) | 2003-09-25 |
| JP2003268549A5 true JP2003268549A5 (enExample) | 2005-09-02 |
| JP4062940B2 JP4062940B2 (ja) | 2008-03-19 |
Family
ID=29202172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002072086A Expired - Fee Related JP4062940B2 (ja) | 2002-03-15 | 2002-03-15 | 製膜方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4062940B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7886688B2 (en) | 2004-09-29 | 2011-02-15 | Sekisui Chemical Co., Ltd. | Plasma processing apparatus |
| JP2008031541A (ja) * | 2006-07-31 | 2008-02-14 | Tokyo Electron Ltd | Ｃｖｄ成膜方法およびｃｖｄ成膜装置 |
| JP2012017478A (ja) * | 2010-07-06 | 2012-01-26 | Honjo Metal Co Ltd | リチウム積層部材およびその製造方法 |
| CN119265513B (zh) * | 2024-09-23 | 2025-09-09 | 广东彩龙新材料股份有限公司 | 一种新能源电池蓄能用镀氧化铝膜及其制备工艺 |
-
2002
- 2002-03-15 JP JP2002072086A patent/JP4062940B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sutherland et al. | Perovskite thin films via atomic layer deposition | |
| Camarda et al. | Luminescence mechanisms of defective ZnO nanoparticles | |
| Wuister et al. | Luminescence and growth of CdTe quantum dots and clusters | |
| Zhang et al. | Surface electronic structure of V2O5 (001): defect states and chemisorption | |
| EP1440458A2 (en) | Method of semiconductor nanoparticle synthesis | |
| Ozerov et al. | Enhancement of exciton emission from ZnO nanocrystalline films by pulsed laser annealing | |
| WO2009109382A1 (en) | Abos:m-based phosphors and light sources containing these phosphors | |
| JP5180813B2 (ja) | カルコゲン化合物粉の製造方法 | |
| JP2003268549A5 (enExample) | ||
| Rohilla et al. | Linear and non-linear photoluminescence studies of Ho3+/Yb3+ co-doped titanate phosphors for photonic applications | |
| JP2001107045A5 (enExample) | ||
| Aranda et al. | Perovskites: weaving a network of knowledge beyond photovoltaics | |
| Vaccaro et al. | Defect‐related visible luminescence of silica nanoparticles | |
| Sadhu et al. | Synthesis and spectroscopic study of high quality alloy Cd x Zn1− x S nanocrystals | |
| JP4500054B2 (ja) | 酸素置換チオアルミネートバリウム蛍光体材料 | |
| Vyas et al. | Probing luminescent Fe-doped ZnO nanowires for high-performance oxygen gas sensing application | |
| JP2005523375A5 (enExample) | ||
| JP3032827B1 (ja) | 半導体薄膜の製造方法 | |
| JP2004075431A (ja) | 酸素負イオンの発生方法及び酸素負イオンの発生装置 | |
| TW200403735A (en) | Particle generator | |
| KR100842376B1 (ko) | 망간 도핑된 황화아연 나노입자의 제조방법 | |
| CN109641760B (zh) | 纳米晶体的制造方法以及钢的制造方法 | |
| Moribayashi et al. | Productions of hollow atoms from solids irradiated by high intensity laser | |
| JP2014009253A (ja) | 硫化物蛍光体の製造方法及びその硫化物蛍光体 | |
| WO2002048786A1 (fr) | Procede de conversion de longueur d'onde, dispositif de conversion de longueur d'onde et machine a faisceau laser |