JP4051027B2 - パワー半導体デバイスモジュール - Google Patents

パワー半導体デバイスモジュール Download PDF

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Publication number
JP4051027B2
JP4051027B2 JP2003502885A JP2003502885A JP4051027B2 JP 4051027 B2 JP4051027 B2 JP 4051027B2 JP 2003502885 A JP2003502885 A JP 2003502885A JP 2003502885 A JP2003502885 A JP 2003502885A JP 4051027 B2 JP4051027 B2 JP 4051027B2
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Japan
Prior art keywords
power semiconductor
thermally conductive
substrate
circuit board
printed circuit
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Expired - Fee Related
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JP2003502885A
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English (en)
Japanese (ja)
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JP2004529505A (ja
Inventor
マングタニ ビジャ
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Infineon Technologies Americas Corp
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International Rectifier Corp USA
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Publication of JP2004529505A publication Critical patent/JP2004529505A/ja
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Publication of JP4051027B2 publication Critical patent/JP4051027B2/ja
Anticipated expiration legal-status Critical
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2003502885A 2001-05-30 2001-05-30 パワー半導体デバイスモジュール Expired - Fee Related JP4051027B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/017415 WO2002099878A1 (en) 2001-05-30 2001-05-30 Power semiconductor module

Publications (2)

Publication Number Publication Date
JP2004529505A JP2004529505A (ja) 2004-09-24
JP4051027B2 true JP4051027B2 (ja) 2008-02-20

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JP (1) JP4051027B2 (de)
DE (1) DE10196942B4 (de)
WO (1) WO2002099878A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4583191B2 (ja) * 2005-01-28 2010-11-17 三菱電機株式会社 回転電機
JP2007012857A (ja) * 2005-06-30 2007-01-18 Renesas Technology Corp 半導体装置
JP5103445B2 (ja) * 2009-06-30 2012-12-19 パナソニック株式会社 誘導加熱調理器
JP2012199596A (ja) * 2012-07-25 2012-10-18 Mitsubishi Electric Corp 半導体モジュール
WO2014052616A2 (en) * 2012-09-27 2014-04-03 The Trustees Of The University Of Pennsylvania Insulated nanoelectrode-nanopore devices and related methods
CN104835794B (zh) * 2015-03-23 2018-02-02 广东美的制冷设备有限公司 智能功率模块及其制造方法
DE102019206523A1 (de) 2019-05-07 2020-11-12 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers
DE102019218157A1 (de) * 2019-11-25 2021-05-27 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers sowie Verfahren zur Herstellung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5012386A (en) * 1989-10-27 1991-04-30 Motorola, Inc. High performance overmolded electronic package
US5287247A (en) * 1990-09-21 1994-02-15 Lsi Logic Corporation Computer system module assembly
JP3058047B2 (ja) * 1995-04-04 2000-07-04 株式会社日立製作所 マルチチップモジュールの封止冷却構造
DE19645636C1 (de) * 1996-11-06 1998-03-12 Telefunken Microelectron Leistungsmodul zur Ansteuerung von Elektromotoren
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips
US6147869A (en) * 1997-11-24 2000-11-14 International Rectifier Corp. Adaptable planar module
JP3547333B2 (ja) * 1999-02-22 2004-07-28 株式会社日立産機システム 電力変換装置

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JP2004529505A (ja) 2004-09-24
DE10196942B4 (de) 2009-09-03
WO2002099878A1 (en) 2002-12-12
DE10196942T5 (de) 2004-04-22

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