JP4050730B2 - 酸化物超電導体およびその製造方法 - Google Patents
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- 239000002887 superconductor Substances 0.000 title claims description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 135
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 56
- 239000010949 copper Substances 0.000 claims description 47
- 239000011248 coating agent Substances 0.000 claims description 40
- 238000000576 coating method Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 38
- 239000002253 acid Substances 0.000 claims description 32
- 238000010304 firing Methods 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- LRMSQVBRUNSOJL-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)F LRMSQVBRUNSOJL-UHFFFAOYSA-N 0.000 claims description 27
- 238000001354 calcination Methods 0.000 claims description 25
- 125000004432 carbon atom Chemical group C* 0.000 claims description 23
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- 238000005259 measurement Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 15
- 229910052779 Neodymium Inorganic materials 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 14
- 229910052746 lanthanum Inorganic materials 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 239000007795 chemical reaction product Substances 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 229910052772 Samarium Inorganic materials 0.000 claims description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 10
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 claims description 9
- 108010025899 gelatin film Proteins 0.000 claims description 9
- 229910052788 barium Inorganic materials 0.000 claims description 7
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 6
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 6
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000006467 substitution reaction Methods 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 3
- 239000000843 powder Substances 0.000 description 76
- 238000000034 method Methods 0.000 description 68
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 37
- 239000001301 oxygen Substances 0.000 description 37
- 229910052760 oxygen Inorganic materials 0.000 description 37
- 238000006243 chemical reaction Methods 0.000 description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 31
- 239000000499 gel Substances 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 27
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 21
- 238000000746 purification Methods 0.000 description 19
- 229910021645 metal ion Inorganic materials 0.000 description 17
- 239000013078 crystal Substances 0.000 description 16
- 238000005886 esterification reaction Methods 0.000 description 16
- 238000000137 annealing Methods 0.000 description 15
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 14
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000012300 argon atmosphere Substances 0.000 description 8
- QEWYKACRFQMRMB-UHFFFAOYSA-N fluoroacetic acid Chemical compound OC(=O)CF QEWYKACRFQMRMB-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 230000006698 induction Effects 0.000 description 8
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 7
- 150000008064 anhydrides Chemical class 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 235000002597 Solanum melongena Nutrition 0.000 description 6
- 244000061458 Solanum melongena Species 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 5
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000007942 carboxylates Chemical class 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PBWZKZYHONABLN-UHFFFAOYSA-N difluoroacetic acid Chemical compound OC(=O)C(F)F PBWZKZYHONABLN-UHFFFAOYSA-N 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- YPJUNDFVDDCYIH-UHFFFAOYSA-N perfluorobutyric acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)F YPJUNDFVDDCYIH-UHFFFAOYSA-N 0.000 description 3
- CXZGQIAOTKWCDB-UHFFFAOYSA-N perfluoropentanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CXZGQIAOTKWCDB-UHFFFAOYSA-N 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000032050 esterification Effects 0.000 description 2
- VFRSADQPWYCXDG-LEUCUCNGSA-N ethyl (2s,5s)-5-methylpyrrolidine-2-carboxylate;2,2,2-trifluoroacetic acid Chemical group OC(=O)C(F)(F)F.CCOC(=O)[C@@H]1CC[C@H](C)N1 VFRSADQPWYCXDG-LEUCUCNGSA-N 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- WROMPOXWARCANT-UHFFFAOYSA-N tfa trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.OC(=O)C(F)(F)F WROMPOXWARCANT-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- UOBPHQJGWSVXFS-UHFFFAOYSA-N [O].[F] Chemical compound [O].[F] UOBPHQJGWSVXFS-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- UMDZPTZRSLRIAV-UHFFFAOYSA-L copper;2-fluoroacetate Chemical compound [Cu+2].[O-]C(=O)CF.[O-]C(=O)CF UMDZPTZRSLRIAV-UHFFFAOYSA-L 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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Description
T. Araki and I. Hirabayashi, Supercond. Sci. Technol. 16, R71 (2003). T. Araki, Cryogenics 41, 675 (2002). T. Araki, et al, J. Appl. Phys. 92, 3318 (2002). T. Araki, et al, Supercond. Sci. Technol. 14, L21 (2001).
本発明の実施形態に係る方法では、以下のような手順により酸化物超電導体が製造される。
CF3COO-Cu-OCOCF3 + H2O → CF3COO-Cu-H + CF3COOH。
(6)時刻0からtb1(熱処理開始から7分程度)の間に熱処理炉内の温度は室温から100℃まで急激に上昇する。このとき熱処理炉内は常圧の酸素混合アルゴンガス雰囲気中に置かれる。この時の酸素濃度は焼成を行う超電導体の金属種や焼成温度により最適濃度が決まる。従来のY系(YBa2Cu3O7-x)で800℃焼成の場合の酸素分圧は1000ppmで、温度が25℃低下するたびに酸素濃度をほぼ半減させる熱処理条件が最適焼成条件であった。La系、Nd系、Sm系においても温度が25℃低下するたびに酸素濃度はほぼ半減させるのが好ましいが、800℃焼成における酸素分圧はそれぞれ順に1ppm、5ppm、20ppmである。なお、この後の熱処理工程は全て常圧下で行うことができる。
(Ba-O-F:アモルファス) + H2O → BaO + HF↑
(1/2)M2O3 + 2BaO + 3CuO → MBa2Cu3O6
(9)時刻tb4からガスを乾燥ガスに切り替える。tb4までに形成された酸化物MBa2Cu3O6は800℃付近の高温では水蒸気に安定であるが、600℃付近では水蒸気により分解してしまうため乾燥ガスに切り替える。
[実施例1]
(CH3OCO)3Smの約3.8水和物の粉末をイオン交換水中に溶解し、反応等モル量のCF3CF2COOH(PFP)とナス型フラスコ中で混合して攪拌し、ロータリーエバポレータを用いて減圧下で反応および精製を約10時間行い、半透明淡黄色の粉末SL1appを得た(図1e)。この粉末SL1appをその約100倍の重量に相当するメタノールを加えて完全に溶解して黄色溶液を得た後、この溶液を再びロータリーエバポレータを用いて減圧下で約12時間精製し、不透明淡黄色の粉末SL1apを得た(図1i)。この粉末SL1apを再びメタノール中に溶解し、メスフラスコを用いて希釈し、金属イオン換算で0.78mol/Lの溶液SL1aを得た(図1k)。
Fm1a Fm1b Fm1c Fm1d。
(CH3OCO)3Smの約3.8水和物の粉末をイオン交換水中に溶解し、反応等モル量のCF3CF2COOH(PFP)とナス型フラスコ中で混合して攪拌し、ロータリーエバポレータを用いて減圧下で反応および精製を約10時間行い、半透明淡黄色の粉末SL2appを得た(図1e)。この粉末SL2appを、その約100倍の重量に相当するメタノールを加えて完全に溶解して黄色溶液を得た後、この溶液を再びロータリーエバポレータを用いて減圧下で約12時間精製し、不透明淡黄色の粉末SL2apを得た(図1i)。この粉末SL2apを再びメタノール中に溶解し、メスフラスコを用いて希釈し、金属イオン換算で0.78mol/Lの溶液SL2aを得た(図1k)。
(CH3OCO)3Smの約3.8水和物の粉末をイオン交換水中に溶解し、反応等モル量のCF3CF2COOH(PFP)とナス型フラスコ中で混合して攪拌し、ロータリーエバポレータを用いて減圧下で反応および精製を約10時間行い、半透明淡黄色の粉末SL3appを得た(図1e)。この粉末SL3appを、その約100倍の重量に相当するメタノールを加えて完全に溶解して黄色溶液を得た後、この溶液を再びロータリーエバポレータを用いて減圧下で約12時間精製し、不透明淡黄色の粉末SL3apを得た(図1i)。この粉末SL3apを再びメタノール中に溶解し、メスフラスコを用いて希釈し、金属イオン換算で0.78mol/Lの溶液SL3aを得た(図1k)。
(CH3OCO)3Smの約3.8水和物の粉末をイオン交換水中に溶解し、反応等モル量のCF3CF2COOH(PFP)とナス型フラスコ中で混合して攪拌し、ロータリーエバポレータを用いて減圧下で反応および精製を約10時間行い、半透明淡黄色の粉末SL4appを得た(図1e)。この粉末SL4appを、その約100倍の重量に相当するメタノールを加えて完全に溶解して黄色溶液を得た後、この溶液を再びロータリーエバポレータを用いて減圧下で約12時間精製し、不透明淡黄色の粉末SL4apを得た(図1i)。この粉末SL4apを再びメタノール中に溶解し、メスフラスコを用いて希釈し、金属イオン換算で0.78mol/Lの溶液SL4aを得た(図1k)。
(CH3OCO)3Laの約1.5水和物の粉末または(CH3OCO)3Ndの約1.0水和物の粉末をイオン交換水中に溶解し、各々の溶液に反応等モル量のCF3CF2COOH(PFP)とナス型フラスコ中で混合して攪拌し、ロータリーエバポレータを用いて減圧下で反応および精製を約10時間行い、半透明白色の粉末SL5a1pp、半透明紫色の粉末SL5a2ppを得た(図1e)。各々の粉末をその約100倍の重量に相当するメタノールを加えて完全に溶解して透明溶液または薄紫色溶液を得た後、各々の溶液を再びロータリーエバポレータを用いて減圧下で約12時間精製し、半透明白色の粉末SL5a1ppまたは半透明紫色の粉末SL5a2ppを得た(図1i)。各々の粉末を再びメタノール中に溶解し、メスフラスコを用いて希釈し、金属イオン換算で約0.90mol/Lのコーティング溶液SL5a1、または金属イオン換算で約0.32mol/Lのコーティング溶液SL5a2を得た(図1k)。
(CH3OCO)3Yの約3.6水和物の粉末、(CH3OCO)3Smの約3.8水和物の粉末、または(CH3OCO)3Ndの約1.0水和物の粉末をイオン交換水中に溶解し、反応等モル量のCF3CF2COOH(PFP)とナス型フラスコ中で混合して攪拌し、ロータリーエバポレータを用いて減圧下で反応および精製を約10時間行い、半透明白色の粉末SL6a1pp、半透明黄色の粉末SL6a2pp、または半透明紫色の粉末SL6a3ppを得た(図1e)。
(CH3OCO)3Smの約3.8水和物の粉末をイオン交換水中に溶解し、反応等モル量のCF3CF2COOH(PFP)とナス型フラスコ中で混合して攪拌し、ロータリーエバポレータを用いて減圧下で反応および精製を約10時間行い、半透明淡黄色の粉末SL7appを得た(図1e)。この粉末SL7appを、その約100倍の重量に相当するメタノールを加えて完全に溶解して黄色溶液を得た後、この溶液を再びロータリーエバポレータを用いて減圧下で約12時間精製し、不透明淡黄色の粉末SL7apを得た(図1i)。この粉末SL7apを再びメタノール中に溶解し、メスフラスコを用いて希釈し、金属イオン換算で0.78mol/Lの溶液SL7aを得た(図1k)。
Claims (9)
- ランタン、ネオジウムおよびサマリウムからなる群より選択される金属Mを含む金属酢酸塩を炭素数3以上のフルオロカルボン酸と、酢酸バリウムを炭素数2のフルオロカルボン酸と、酢酸銅を炭素数2以上のフルオロカルボン酸と、それぞれ反応させて精製し、
反応生成物を前記金属M、バリウムおよび銅のモル比が1:2:3となるようにメタノール中に溶解してコーティング液を調製し、
前記コーティング溶液を基板上に成膜してゲル膜を形成し、仮焼および本焼を行い、酸化物超電導体を得ることを特徴とする酸化物超電導体の製造方法。 - 前記炭素数3以上のフルオロカルボン酸がペンタフルオロプロピオン酸であり、前記炭素数2のフルオロカルボン酸がトリフルオロ酢酸であり、前記炭素数2以上のフルオロカルボン酸がトリフルオロ酢酸またはペンタフルオロプロピオン酸であることを特徴とする請求項1に記載の酸化物超電導体の製造方法。
- ランタン、ネオジウムおよびサマリウムからなる群より選択される金属Mを含む金属酢酸塩を炭素数3以上のフルオロカルボン酸と反応させた後、反応生成物の炭素数3以上のフルオロカルボン酸基を、より炭素数の少ないフルオロカルボン酸基に置換することを特徴とする請求項1に記載の酸化物超電導体の製造方法。
- 前記炭素数の少ないフルオロカルボン酸基がトリフルオロ酢酸基であることを特徴とする請求項3に記載の酸化物超電導体の製造方法。
- 基板上に膜として形成され、主成分がSmBa2Cu3O7-xで表され、銅に対してモル比で10-2〜10-6のフッ素を含み、XRD測定において観測されるa/b軸配向粒子とc軸配向粒子の合計強度のうちa/b軸配向粒子の強度が占める割合が15%以下であることを特徴とする酸化物超電導体。
- 基板上に膜として形成され、主成分がNdBa2Cu3O7-xで表され、銅に対してモル比で10-2〜10-6のフッ素を含み、XRD測定において観測されるa/b軸配向粒子とc軸配向粒子の合計強度のうちa/b軸配向粒子の強度が占める割合が50%以下であることを特徴とする酸化物超電導体。
- 基板上に膜として形成され、主成分がLaBa2Cu3O7-xで表され、銅に対してモル比で10-2〜10-6のフッ素を含むことを特徴とする酸化物超電導体。
- 基板面に垂直な断面でのTEM観察で基板とMBa2Cu3O7-x界面における2軸配向層の比率が95%以上でかつ表面層の2軸配向層比率が80%以下であることを特徴とする請求項5ないし7のいずれか1項に記載の酸化物超電導体。
- 基板から垂直方向に50nm移動した基板と平行な面でのTEM観察で結合角0.2〜1度程度の粒界が5〜50nmごとに規則正しく配列する構造を持つことを特徴とする請求項5ないし7のいずれか1項に記載の酸化物超電導体。
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