JP4042959B2 - トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法 - Google Patents
トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法 Download PDFInfo
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- JP4042959B2 JP4042959B2 JP2002163569A JP2002163569A JP4042959B2 JP 4042959 B2 JP4042959 B2 JP 4042959B2 JP 2002163569 A JP2002163569 A JP 2002163569A JP 2002163569 A JP2002163569 A JP 2002163569A JP 4042959 B2 JP4042959 B2 JP 4042959B2
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- neodymium
- divm
- thin film
- tris
- ferroelectric thin
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- 239000010409 thin film Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000007983 Tris buffer Substances 0.000 title claims description 15
- 229910052779 Neodymium Inorganic materials 0.000 title claims description 11
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 title claims description 11
- 229910002115 bismuth titanate Inorganic materials 0.000 title claims description 10
- -1 neodymium-substituted bismuth Chemical class 0.000 title claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 6
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 title claims description 5
- 239000000243 solution Substances 0.000 claims description 39
- 239000010936 titanium Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 17
- 238000009834 vaporization Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 230000008016 vaporization Effects 0.000 claims description 13
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 2
- ZHXAZZQXWJJBHA-UHFFFAOYSA-N triphenylbismuthane Chemical compound C1=CC=CC=C1[Bi](C=1C=CC=CC=1)C1=CC=CC=C1 ZHXAZZQXWJJBHA-UHFFFAOYSA-N 0.000 claims description 2
- 238000006467 substitution reaction Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 31
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 21
- 150000001875 compounds Chemical class 0.000 description 16
- 238000005259 measurement Methods 0.000 description 15
- 239000002904 solvent Substances 0.000 description 13
- 230000008018 melting Effects 0.000 description 12
- 238000002844 melting Methods 0.000 description 12
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000006200 vaporizer Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
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- 238000010586 diagram Methods 0.000 description 5
- 229910052747 lanthanoid Inorganic materials 0.000 description 5
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- 101150047304 TMOD1 gene Proteins 0.000 description 4
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- 229910052751 metal Inorganic materials 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010908 decantation Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Natural products CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
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- 238000002451 electron ionisation mass spectrometry Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000012264 purified product Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- FXNDIJDIPNCZQJ-UHFFFAOYSA-N 2,4,4-trimethylpent-1-ene Chemical group CC(=C)CC(C)(C)C FXNDIJDIPNCZQJ-UHFFFAOYSA-N 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- UHOVQNZJYSORNB-MZWXYZOWSA-N benzene-d6 Chemical compound [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- FYDKNKUEBJQCCN-UHFFFAOYSA-N lanthanum(3+);trinitrate Chemical compound [La+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FYDKNKUEBJQCCN-UHFFFAOYSA-N 0.000 description 1
- GJKFIJKSBFYMQK-UHFFFAOYSA-N lanthanum(3+);trinitrate;hexahydrate Chemical compound O.O.O.O.O.O.[La+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GJKFIJKSBFYMQK-UHFFFAOYSA-N 0.000 description 1
- CFYGEIAZMVFFDE-UHFFFAOYSA-N neodymium(3+);trinitrate Chemical compound [Nd+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CFYGEIAZMVFFDE-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
Images
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- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002163569A JP4042959B2 (ja) | 2002-04-26 | 2002-04-26 | トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002163569A JP4042959B2 (ja) | 2002-04-26 | 2002-04-26 | トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003321417A JP2003321417A (ja) | 2003-11-11 |
| JP2003321417A5 JP2003321417A5 (enExample) | 2007-07-05 |
| JP4042959B2 true JP4042959B2 (ja) | 2008-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002163569A Expired - Fee Related JP4042959B2 (ja) | 2002-04-26 | 2002-04-26 | トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法 |
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| Country | Link |
|---|---|
| JP (1) | JP4042959B2 (enExample) |
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- 2002-04-26 JP JP2002163569A patent/JP4042959B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
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| JP2003321417A (ja) | 2003-11-11 |
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