JP2003321417A5 - - Google Patents
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- Publication number
- JP2003321417A5 JP2003321417A5 JP2002163569A JP2002163569A JP2003321417A5 JP 2003321417 A5 JP2003321417 A5 JP 2003321417A5 JP 2002163569 A JP2002163569 A JP 2002163569A JP 2002163569 A JP2002163569 A JP 2002163569A JP 2003321417 A5 JP2003321417 A5 JP 2003321417A5
- Authority
- JP
- Japan
- Prior art keywords
- tris
- diisobutyryl methanate
- lanthanoids
- lanthanide
- neodymium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007983 Tris buffer Substances 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002163569A JP4042959B2 (ja) | 2002-04-26 | 2002-04-26 | トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002163569A JP4042959B2 (ja) | 2002-04-26 | 2002-04-26 | トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003321417A JP2003321417A (ja) | 2003-11-11 |
| JP2003321417A5 true JP2003321417A5 (enExample) | 2007-07-05 |
| JP4042959B2 JP4042959B2 (ja) | 2008-02-06 |
Family
ID=29545708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002163569A Expired - Fee Related JP4042959B2 (ja) | 2002-04-26 | 2002-04-26 | トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4042959B2 (enExample) |
-
2002
- 2002-04-26 JP JP2002163569A patent/JP4042959B2/ja not_active Expired - Fee Related
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