JP4014700B2 - 結晶薄膜製造方法 - Google Patents

結晶薄膜製造方法 Download PDF

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Publication number
JP4014700B2
JP4014700B2 JP26908597A JP26908597A JP4014700B2 JP 4014700 B2 JP4014700 B2 JP 4014700B2 JP 26908597 A JP26908597 A JP 26908597A JP 26908597 A JP26908597 A JP 26908597A JP 4014700 B2 JP4014700 B2 JP 4014700B2
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Japan
Prior art keywords
thin film
cycle
species
substrate surface
adsorbed
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JP26908597A
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Japanese (ja)
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JPH11106288A5 (enExample
JPH11106288A (ja
Inventor
良幸 須田
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP26908597A 1997-10-01 1997-10-01 結晶薄膜製造方法 Expired - Fee Related JP4014700B2 (ja)

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JP26908597A JP4014700B2 (ja) 1997-10-01 1997-10-01 結晶薄膜製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26908597A JP4014700B2 (ja) 1997-10-01 1997-10-01 結晶薄膜製造方法

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JPH11106288A JPH11106288A (ja) 1999-04-20
JPH11106288A5 JPH11106288A5 (enExample) 2005-05-19
JP4014700B2 true JP4014700B2 (ja) 2007-11-28

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JP26908597A Expired - Fee Related JP4014700B2 (ja) 1997-10-01 1997-10-01 結晶薄膜製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5005170B2 (ja) * 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法

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JPH11106288A (ja) 1999-04-20

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