JP4009869B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP4009869B2 JP4009869B2 JP2004327264A JP2004327264A JP4009869B2 JP 4009869 B2 JP4009869 B2 JP 4009869B2 JP 2004327264 A JP2004327264 A JP 2004327264A JP 2004327264 A JP2004327264 A JP 2004327264A JP 4009869 B2 JP4009869 B2 JP 4009869B2
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- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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Description
以下、本発明の特徴を明確にするため、公知のアルカリ土類金属系窒化ケイ素蛍光体Ca2Si5N8:Euを製造し、測定を行った。試験結果を表1に示す。
本発明の作用効果を明確にするため、雰囲気の違い以外は、同条件で焼成を行った。その結果を、表2及び表3に示す。図2は、実施例2及び比較例6を、Ex=460nmで励起したときの発光スペクトルを示す図である。
表4及び表5は、本発明に係る窒化物蛍光体の実施例2〜4を示す。また、図3乃至5は、実施例2〜4の発光特性を示したものである。図3は、実施例2〜4を、Ex=460nmで励起したときの発光スペクトルを示す図である。図4は、実施例2〜4の励起スペクトルを示したものである。図5は、実施例2〜4の反射スペクトルを示したものである。
表6は、本発明に係る窒化物蛍光体の実施例5〜7を示す。
Ca3N2(高純度化学製) 1.284g
Si3N4(宇部製) 3.376g
Eu2O3(信越製) 0.339g
この3化合物原料をBNるつぼに入れ、1200℃から1350℃、アンモニア雰囲気下、管状炉で5時間、焼成を行った。温度は室温から5時間かけて1350℃まで徐々に加熱し、5時間焼成を行った後、さらに5時間かけて室温まで徐々に冷却を行った。アンモニアガスは、2l/minの割合で終始流し続けた。この結果、体色が橙色、発光も橙色の窒化物蛍光体粉末が得られた。この蛍光体粉末は肉眼観察において、蛍光体粉末全体が橙色に発光している。このように蛍光体全体が均一に発光が行われているため、製造効率の向上、安定した窒化物蛍光体の提供、製造コストの低廉を図ることができる。
Ca3N2(高純度化学製) 2.888g
Si3N4(宇部製) 6.971g
Eu2O3(信越製) 0.140g
この3化合物原料も、実施例5と同様の試験方法で焼成を行った。この結果、実施例5と同様、体色が橙色、発光も橙色の蛍光体粉末が得られた。
Ca3N2(高純度化学製) 2.930g
Si3N4(宇部製) 7.000g
Eu2O3(信越製) 0.070g
この3化合物原料も、実施例5と同様の試験方法で焼成を行った。この結果、実施例5と同様、体色が橙色、発光も橙色の蛍光体粉末が得られた。また本実施例7により得られた窒化物蛍光体は、肉眼観察において、発光輝度が比較例よりも向上していた。さらに、本実施例7により得られた蛍光体は、実施例6とほぼ同様の発光輝度を示した。
代表例として実施例6及び7の窒化物蛍光体の測定を行った。試験結果を図6から図9に示す。図6は、実施例6及び7をEx=400nmで励起したときの発光スペクトルを示す図である。図7は、実施例6及び7をEx=460nmで励起したときの発光スペクトルを示す図である。図8は、実施例6及び7の反射率を示す図である。図9は、実施例6及び7の励起スペクトルを示す図である。
実施例8は、蛍光体Sr1.97Eu0.03Si5N8である。原料の窒化ストロンチウムSr3N2、窒化ケイ素Si3N4、酸化ユウロピウムEu2O3の配合比率はSr:Si:Eu=1.97:5:0.03である。この3化合物原料をBNるつぼに入れ、管状炉で800℃〜1000℃で3時間焼成し、その後、1250℃〜1350℃で5時間焼成を行い、5時間かけて室温まで徐々に冷却を行った。アンモニアガスは、1l/minの割合で、終始流し続けた。この結果、体色がピンク、365nmの光照射を行うと肉眼でピンクに発光している窒化物蛍光体が得られた。実施例8の窒化物蛍光体の200℃における温度特性は87.7%と極めて高い温度特性を示している。表7及び表8は本発明に係る窒化物蛍光体の実施例8及び9を示す。
窒化物蛍光体の種々の実施例を示す。窒化物蛍光体は、LXMYN(2/3X+4/3Y):Zで表される窒化物蛍光体である。該窒化物蛍光体の基本構成元素である、Lは、Be、Mg、Ca、Sr、Ba、Zn、Cd、HgのII価からなる群より選ばれる少なくとも1種以上を含有し、Mは、C、Si、Ge、SnのIV価からなる群より選ばれる少なくとも1種以上を含有し、Zは、賦活剤である。賦活剤Zは、Euが好ましいが、Cr、Mn、Pb、Sb、Ce、Tb、Sm、Pr、Tm、Ho、Erなども使用することができる。
図11は、本発明に係る発光装置1を示す図である。
図12は、本発明に係る発光装置2を示す図である。図13は、本発明に係る発光装置2の発光スペクトルを示す図である。図14は、本発明に係る発光装置2の色度座標を示す図である。
P2 原料のSiを粉砕する。
P3 原料のLを、窒素雰囲気中で窒化する。
P4 原料のSiを、窒素雰囲気中で窒化する。
P5 Lの窒化物L3N2を粉砕する
P6 窒化ケイ素Si3N4について、粉砕を行う。
P7 Euの化合物Eu2O3について、粉砕を行う。
P8 L3N2、Si3N4、Eu2O3を混合する。
P9 L3N2、Si3N4、Eu2O3の混合物をアンモニア雰囲気中で、焼成する。
P10 LXSiYNZ:Euで表される蛍光体を得ることができる。
1 半導体発光素子
2 リード電極
3 絶縁封止材
4 導電性ワイヤ
5 パッケージ
6 リッド
7 透光性の窓部
8 本発明の蛍光体
11 サファイア基板
12 半導体層
13、13a、13b リードフレーム
14 窒化物蛍光体8a
15 エポキシ樹脂
Claims (2)
- 第1の発光スペクトルの光を発する半導体発光素子と、
前記第1の発光スペクトルの光の少なくとも一部を吸収して、前記第1の発光スペクトルと異なる第2の発光スペクトルの光を発する第1の蛍光体と、
前記第1の発光スペクトルの光の少なくとも一部を吸収して、前記第1の発光スペクトル及び前記第2の発光スペクトルと異なる第3の発光スペクトルの光を発する第2の蛍光体と、
を有する発光装置であって、
前記第1の蛍光体は、L X M Y N (2/3X+4/3Y) :Z(Lは、Be、Mg、Ca、Sr、Ba、Zn、Cd、Hgからなる群より選ばれる少なくとも1種以上を含有するII価の元素である。Mは、C、Si、Ge、Sn、Ti、Zr、Hfからなる群より選ばれる少なくとも1種以上を含有するIV価の元素である。Zは、Eu、Cr、Mn、Pb、Sb、Ce、Tb、Pr、Sm、Tm、Ho、Erからなる群より選ばれる少なくとも一種以上を含有する賦活剤である。X=1〜2、Y=5〜7である。)で表される、少なくとも窒素を含み黄色から赤色領域にピーク波長を持つ、アンモニア雰囲気中で焼成が行われた窒化物蛍光体であり、
前記第2の蛍光体は、緑色系発光蛍光体SrAl 2 O 4 :Eu、Y 2 SiO 5 :Ce,Tb、MgAl 11 O 19 :Ce,Tb、Sr 7 Al 12 O 25 :Eu、(Mg、Ca、Sr、Baのうち少なくとも1以上)Ga 2 S 4 :Eu、青色系発光蛍光体Sr 5 (PO 4 ) 3 Cl:Eu、(SrCaBa) 5 (PO 4 ) 3 Cl:Eu、(BaCa) 5 (PO 4 ) 3 Cl:Eu、(Mg、Ca、Sr、Baのうち少なくとも1以上) 2 B 5 O 9 Cl:Eu,Mn、(Mg、Ca、Sr、Baのうち少なくとも1以上)(PO 4 ) 6 Cl 2 :Eu,Mn、赤色系発光蛍光体Y 2 O 2 S:Eu、La 2 O 2 S:Eu、Y 2 O 3 :Eu、Ga 2 O 2 S:Euからなる群より選ばれる少なくとも1種以上であることを特徴とする発光装置。 - 前記Lは、SrとCaとの組み合わせであることを特徴とする請求項1に記載の発光装置。
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JP2004327264A JP4009869B2 (ja) | 2004-11-11 | 2004-11-11 | 発光装置 |
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JP2002080879A Division JP4009828B2 (ja) | 2002-03-22 | 2002-03-22 | 窒化物蛍光体及びその製造方法 |
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US8244156B2 (en) | 2008-06-20 | 2012-08-14 | Fuji Xerox Co., Ltd. | Method for producing cleaning device and cleaning device |
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JP4981042B2 (ja) * | 2005-06-30 | 2012-07-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 黄緑色を放出するルミネッセント材料を含む照明系 |
WO2007066733A1 (ja) * | 2005-12-08 | 2007-06-14 | National Institute For Materials Science | 蛍光体とその製造方法および発光器具 |
TW200807104A (en) | 2006-04-19 | 2008-02-01 | Mitsubishi Chem Corp | Color image display device |
JP5515141B2 (ja) * | 2009-03-16 | 2014-06-11 | Necライティング株式会社 | 蛍光体および蛍光ランプ |
JP5515142B2 (ja) * | 2009-03-16 | 2014-06-11 | Necライティング株式会社 | 蛍光体および蛍光ランプ |
JP2013142134A (ja) * | 2012-01-12 | 2013-07-22 | Denki Kagaku Kogyo Kk | 蛍光体及び発光装置 |
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US8244156B2 (en) | 2008-06-20 | 2012-08-14 | Fuji Xerox Co., Ltd. | Method for producing cleaning device and cleaning device |
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