JP4005881B2 - 露光装置の検査方法 - Google Patents

露光装置の検査方法 Download PDF

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Publication number
JP4005881B2
JP4005881B2 JP2002255210A JP2002255210A JP4005881B2 JP 4005881 B2 JP4005881 B2 JP 4005881B2 JP 2002255210 A JP2002255210 A JP 2002255210A JP 2002255210 A JP2002255210 A JP 2002255210A JP 4005881 B2 JP4005881 B2 JP 4005881B2
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JP
Japan
Prior art keywords
optical system
pattern
exposure apparatus
photosensitive substrate
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002255210A
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English (en)
Japanese (ja)
Other versions
JP2004095871A (ja
Inventor
和也 福原
壮一 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002255210A priority Critical patent/JP4005881B2/ja
Priority to TW092123011A priority patent/TW200407966A/zh
Priority to CNB031560024A priority patent/CN100414438C/zh
Priority to CNB2007100964172A priority patent/CN100526997C/zh
Priority to US10/650,013 priority patent/US7286216B2/en
Priority to NL1024195A priority patent/NL1024195C2/nl
Publication of JP2004095871A publication Critical patent/JP2004095871A/ja
Priority to US11/806,976 priority patent/US7327449B2/en
Application granted granted Critical
Publication of JP4005881B2 publication Critical patent/JP4005881B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2002255210A 2002-08-30 2002-08-30 露光装置の検査方法 Expired - Fee Related JP4005881B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002255210A JP4005881B2 (ja) 2002-08-30 2002-08-30 露光装置の検査方法
TW092123011A TW200407966A (en) 2002-08-30 2003-08-21 Inspection method for exposure device and the exposure device
CNB2007100964172A CN100526997C (zh) 2002-08-30 2003-08-28 曝光装置的检查方法
US10/650,013 US7286216B2 (en) 2002-08-30 2003-08-28 Exposure apparatus inspection method and exposure apparatus
CNB031560024A CN100414438C (zh) 2002-08-30 2003-08-28 曝光装置
NL1024195A NL1024195C2 (nl) 2002-08-30 2003-08-29 Inspectiewerkwijze voor een belichtingsinrichting en een belichtingsinrichting.
US11/806,976 US7327449B2 (en) 2002-08-30 2007-06-05 Exposure apparatus inspection method and exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002255210A JP4005881B2 (ja) 2002-08-30 2002-08-30 露光装置の検査方法

Publications (2)

Publication Number Publication Date
JP2004095871A JP2004095871A (ja) 2004-03-25
JP4005881B2 true JP4005881B2 (ja) 2007-11-14

Family

ID=32060786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002255210A Expired - Fee Related JP4005881B2 (ja) 2002-08-30 2002-08-30 露光装置の検査方法

Country Status (5)

Country Link
US (2) US7286216B2 (enExample)
JP (1) JP4005881B2 (enExample)
CN (2) CN100414438C (enExample)
NL (1) NL1024195C2 (enExample)
TW (1) TW200407966A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3787123B2 (ja) * 2003-02-13 2006-06-21 株式会社東芝 検査方法、プロセッサ及び半導体装置の製造方法
JP2007534166A (ja) * 2004-04-14 2007-11-22 ライテル・インストルメンツ 射出瞳透過率を計測する方法および装置
JP2005337957A (ja) * 2004-05-28 2005-12-08 Dainippon Screen Mfg Co Ltd 基板検査装置
KR101152713B1 (ko) * 2005-02-25 2012-06-15 가부시키가이샤 니콘 노광 방법 및 장치, 및 전자 디바이스 제조 방법
JP2006303196A (ja) 2005-04-20 2006-11-02 Canon Inc 測定装置及びそれを有する露光装置
JP4771871B2 (ja) * 2006-06-15 2011-09-14 Ｈｏｙａ株式会社 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
DE102008004762A1 (de) 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung
JP5446648B2 (ja) * 2008-10-07 2014-03-19 信越化学工業株式会社 パターン形成方法
KR20100042924A (ko) * 2008-10-17 2010-04-27 삼성전자주식회사 포토 마스크의 헤이즈 모니터링 시스템 및 모니터링 방법
KR101511158B1 (ko) * 2008-12-16 2015-04-13 삼성전자주식회사 레티클 에러 검출 방법
EP2823288B1 (en) * 2012-03-07 2021-05-05 KLA-Tencor Corporation Wafer and reticle inspection systems and method for selecting illumination pupil configurations
TWI489200B (zh) * 2012-05-29 2015-06-21 Sino American Silicon Prod Inc 半圓對接式光罩圖案的設計方法
CN106154756B (zh) * 2015-04-07 2020-10-09 联华电子股份有限公司 照明系统以及使用其形成鳍状结构的方法
JP7596106B2 (ja) * 2020-09-28 2024-12-09 キヤノン株式会社 情報処理装置、検査方法、プログラム、露光装置、決定方法、及び物品の製造方法
EP4095573A1 (en) * 2021-05-27 2022-11-30 ASML Netherlands B.V. Diffraction grating for measurements in euv-exposure apparatuses

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61210627A (ja) 1985-03-15 1986-09-18 Canon Inc 有効光源測定用ピンホ−ル板
DE3635689A1 (de) * 1986-10-21 1988-05-05 Messerschmitt Boelkow Blohm Verfahren zur vermessung der optischen achse eines leitstrahlprojektors und einrichtung zur durchfuehrung des verfahrens
JP2928277B2 (ja) 1989-08-03 1999-08-03 株式会社日立製作所 投影露光方法及びその装置
JPH03221848A (ja) * 1990-01-26 1991-09-30 Canon Inc 異物検査装置
JP3048168B2 (ja) * 1990-07-19 2000-06-05 キヤノン株式会社 表面状態検査装置及びこれを備える露光装置
JP3158691B2 (ja) * 1992-08-07 2001-04-23 株式会社ニコン 露光装置及び方法、並びに照明光学装置
US6153886A (en) * 1993-02-19 2000-11-28 Nikon Corporation Alignment apparatus in projection exposure apparatus
JP3463335B2 (ja) * 1994-02-17 2003-11-05 株式会社ニコン 投影露光装置
JP3341269B2 (ja) * 1993-12-22 2002-11-05 株式会社ニコン 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法
KR0143814B1 (ko) * 1995-03-28 1998-07-01 이대원 반도체 노광 장치
US5978085A (en) * 1997-03-07 1999-11-02 Litel Instruments Apparatus method of measurement and method of data analysis for correction of optical system
US5973771A (en) * 1997-03-26 1999-10-26 International Business Machines Corporation Pupil imaging reticle for photo steppers
JP3784136B2 (ja) * 1997-06-02 2006-06-07 株式会社ルネサステクノロジ 投影露光装置および投影露光方法
US6356345B1 (en) * 1998-02-11 2002-03-12 Litel Instruments In-situ source metrology instrument and method of use
JP3302926B2 (ja) * 1998-07-02 2002-07-15 株式会社東芝 露光装置の検査方法
JP3513031B2 (ja) * 1998-10-09 2004-03-31 株式会社東芝 アライメント装置の調整方法、収差測定方法及び収差測定マーク
US6048651A (en) * 1998-10-23 2000-04-11 International Business Machines Corporation Fresnel zone mask for pupilgram
JP2001027813A (ja) * 1999-07-14 2001-01-30 Toshiba Corp 露光方法およびその装置
JP3863339B2 (ja) * 2000-03-28 2006-12-27 株式会社東芝 光軸ずれ測定方法
JP2001330964A (ja) 2000-05-22 2001-11-30 Nikon Corp 露光装置および該露光装置を用いたマイクロデバイス製造方法
JP2002075815A (ja) * 2000-08-23 2002-03-15 Sony Corp パターン検査装置及びこれを用いた露光装置制御システム
JP2002083761A (ja) 2000-09-08 2002-03-22 Canon Inc 露光装置及び露光方法
US6597435B2 (en) * 2001-10-09 2003-07-22 Nikon Corporation Reticle stage with reaction force cancellation

Also Published As

Publication number Publication date
US7327449B2 (en) 2008-02-05
CN101063827A (zh) 2007-10-31
TWI300954B (enExample) 2008-09-11
CN1488999A (zh) 2004-04-14
TW200407966A (en) 2004-05-16
CN100526997C (zh) 2009-08-12
CN100414438C (zh) 2008-08-27
US7286216B2 (en) 2007-10-23
NL1024195C2 (nl) 2007-10-03
US20070236691A1 (en) 2007-10-11
NL1024195A1 (nl) 2004-03-02
US20040119973A1 (en) 2004-06-24
JP2004095871A (ja) 2004-03-25

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