JP3987036B2 - フィルタ装置およびその製造方法 - Google Patents

フィルタ装置およびその製造方法 Download PDF

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Publication number
JP3987036B2
JP3987036B2 JP2003543190A JP2003543190A JP3987036B2 JP 3987036 B2 JP3987036 B2 JP 3987036B2 JP 2003543190 A JP2003543190 A JP 2003543190A JP 2003543190 A JP2003543190 A JP 2003543190A JP 3987036 B2 JP3987036 B2 JP 3987036B2
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JP
Japan
Prior art keywords
substrate
filter
acoustic
elastic
filter device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003543190A
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English (en)
Japanese (ja)
Other versions
JP2005509348A5 (enExample
JP2005509348A (ja
Inventor
アイグナー，ローベルト
ティッカ，パシ
エッラ，ユハ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Nokia Oyj
Original Assignee
Infineon Technologies AG
Nokia Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG, Nokia Oyj filed Critical Infineon Technologies AG
Publication of JP2005509348A publication Critical patent/JP2005509348A/ja
Publication of JP2005509348A5 publication Critical patent/JP2005509348A5/ja
Application granted granted Critical
Publication of JP3987036B2 publication Critical patent/JP3987036B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H03H9/02055—Treatment of substrates of the surface including the back surface
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/0211—Means for compensation or elimination of undesirable effects of reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
    • H03H9/585—Stacked Crystal Filters [SCF]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/589—Acoustic mirrors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2003543190A 2001-11-06 2001-11-06 フィルタ装置およびその製造方法 Expired - Fee Related JP3987036B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2001/012826 WO2003041273A1 (en) 2001-11-06 2001-11-06 Filter device and method of fabricating a filter device

Publications (3)

Publication Number Publication Date
JP2005509348A JP2005509348A (ja) 2005-04-07
JP2005509348A5 JP2005509348A5 (enExample) 2007-04-05
JP3987036B2 true JP3987036B2 (ja) 2007-10-03

Family

ID=8164665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003543190A Expired - Fee Related JP3987036B2 (ja) 2001-11-06 2001-11-06 フィルタ装置およびその製造方法

Country Status (5)

Country Link
US (1) US6943647B2 (enExample)
EP (1) EP1454412B1 (enExample)
JP (1) JP3987036B2 (enExample)
DE (1) DE60140319D1 (enExample)
WO (1) WO2003041273A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11146237B2 (en) 2019-01-16 2021-10-12 Murata Manufacturing Co., Ltd. Acoustic wave device

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US7332985B2 (en) * 2003-10-30 2008-02-19 Avago Technologies Wireless Ip (Singapore) Pte Ltd. Cavity-less film bulk acoustic resonator (FBAR) devices
JP2005260484A (ja) * 2004-03-10 2005-09-22 Tdk Corp 圧電共振器およびそれを備えた電子部品
JP2005277454A (ja) * 2004-03-22 2005-10-06 Tdk Corp 圧電共振器およびそれを備えた電子部品
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US7791434B2 (en) * 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
US7598827B2 (en) 2006-06-19 2009-10-06 Maxim Integrated Products Harmonic termination of power amplifiers using BAW filter output matching circuits
US7586389B2 (en) * 2006-06-19 2009-09-08 Maxim Integrated Products, Inc. Impedance transformation and filter using bulk acoustic wave technology
US7706213B2 (en) * 2006-10-23 2010-04-27 Nancy Ann Winfree Mechanical filter for sensors
US20090053401A1 (en) * 2007-08-24 2009-02-26 Maxim Integrated Products, Inc. Piezoelectric deposition for BAW resonators
US8512800B2 (en) * 2007-12-04 2013-08-20 Triquint Semiconductor, Inc. Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters
DE102008003820B4 (de) * 2008-01-10 2013-01-17 Epcos Ag Frontendschaltung
US7768364B2 (en) * 2008-06-09 2010-08-03 Maxim Integrated Products, Inc. Bulk acoustic resonators with multi-layer electrodes
US8030823B2 (en) * 2009-01-26 2011-10-04 Resonance Semiconductor Corporation Protected resonator
US9735338B2 (en) 2009-01-26 2017-08-15 Cymatics Laboratories Corp. Protected resonator
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
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US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
DE102010033867A1 (de) 2010-08-10 2012-02-16 Epcos Ag Filteranordnung, Duplexer sowie Verfahren zur Herstellung einer Filteranordnung
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9484882B2 (en) * 2013-02-14 2016-11-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having temperature compensation
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
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US9473106B2 (en) * 2011-06-21 2016-10-18 Georgia Tech Research Corporation Thin-film bulk acoustic wave delay line
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
US9254997B2 (en) * 2013-08-29 2016-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS-MEMS integrated flow for making a pressure sensitive transducer
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JP2017046225A (ja) * 2015-08-27 2017-03-02 株式会社ディスコ Ｂａｗデバイス及びｂａｗデバイスの製造方法
JP6699927B2 (ja) * 2016-03-03 2020-05-27 株式会社ディスコ Ｂａｗデバイス及びｂａｗデバイスの製造方法

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Publication number Priority date Publication date Assignee Title
US11146237B2 (en) 2019-01-16 2021-10-12 Murata Manufacturing Co., Ltd. Acoustic wave device

Also Published As

Publication number Publication date
WO2003041273A1 (en) 2003-05-15
US6943647B2 (en) 2005-09-13
DE60140319D1 (de) 2009-12-10
EP1454412B1 (en) 2009-10-28
EP1454412A1 (en) 2004-09-08
US20040227591A1 (en) 2004-11-18
JP2005509348A (ja) 2005-04-07

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