JP3983460B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP3983460B2 JP3983460B2 JP2000204291A JP2000204291A JP3983460B2 JP 3983460 B2 JP3983460 B2 JP 3983460B2 JP 2000204291 A JP2000204291 A JP 2000204291A JP 2000204291 A JP2000204291 A JP 2000204291A JP 3983460 B2 JP3983460 B2 JP 3983460B2
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- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
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- 150000002431 hydrogen Chemical class 0.000 description 1
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 229920002647 polyamide Polymers 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical group F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
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- 238000005406 washing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000204291A JP3983460B2 (ja) | 1999-07-06 | 2000-07-05 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19109799 | 1999-07-06 | ||
| JP11-191097 | 1999-07-06 | ||
| JP2000204291A JP3983460B2 (ja) | 1999-07-06 | 2000-07-05 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005221101A Division JP4294622B2 (ja) | 1999-07-06 | 2005-07-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001077374A JP2001077374A (ja) | 2001-03-23 |
| JP2001077374A5 JP2001077374A5 (enExample) | 2005-10-27 |
| JP3983460B2 true JP3983460B2 (ja) | 2007-09-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000204291A Expired - Fee Related JP3983460B2 (ja) | 1999-07-06 | 2000-07-05 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3983460B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW588570B (en) | 2001-06-18 | 2004-05-21 | Semiconductor Energy Lab | Light emitting device and method of fabricating the same |
| US7042024B2 (en) | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
| US6903377B2 (en) | 2001-11-09 | 2005-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
| US8125601B2 (en) * | 2003-01-08 | 2012-02-28 | Samsung Electronics Co., Ltd. | Upper substrate and liquid crystal display device having the same |
| JP3907647B2 (ja) * | 2003-09-08 | 2007-04-18 | シャープ株式会社 | 液晶表示装置 |
| JP4506231B2 (ja) * | 2004-03-29 | 2010-07-21 | 東レ株式会社 | Ips方式液晶表示装置用カラーフィルター基板およびそれを用いたips方式液晶表示装置 |
| KR100675636B1 (ko) * | 2004-05-31 | 2007-02-02 | 엘지.필립스 엘시디 주식회사 | Goldd구조 및 ldd구조의 tft를 동시에포함하는 구동회로부 일체형 액정표시장치 |
| KR101108782B1 (ko) * | 2004-07-30 | 2012-02-24 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
| KR101125252B1 (ko) * | 2004-12-31 | 2012-03-21 | 엘지디스플레이 주식회사 | 폴리 액정 표시 패널 및 그 제조 방법 |
| CN103257491B (zh) * | 2006-09-29 | 2017-04-19 | 株式会社半导体能源研究所 | 半导体设备 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0864830A (ja) * | 1994-08-25 | 1996-03-08 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| JP3948034B2 (ja) * | 1995-09-06 | 2007-07-25 | セイコーエプソン株式会社 | 半導体装置とその製造方法、及びアクティブマトリクス基板 |
| US5965919A (en) * | 1995-10-19 | 1999-10-12 | Samsung Electronics Co., Ltd. | Semiconductor device and a method of fabricating the same |
| JPH10198292A (ja) * | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP3274081B2 (ja) * | 1997-04-08 | 2002-04-15 | 松下電器産業株式会社 | 薄膜トランジスタの製造方法および液晶表示装置の製造方法 |
| JPH1145999A (ja) * | 1997-07-24 | 1999-02-16 | Hitachi Ltd | 半導体装置およびその製造方法ならびに画像表示装置 |
-
2000
- 2000-07-05 JP JP2000204291A patent/JP3983460B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001077374A (ja) | 2001-03-23 |
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