JP3983460B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3983460B2
JP3983460B2 JP2000204291A JP2000204291A JP3983460B2 JP 3983460 B2 JP3983460 B2 JP 3983460B2 JP 2000204291 A JP2000204291 A JP 2000204291A JP 2000204291 A JP2000204291 A JP 2000204291A JP 3983460 B2 JP3983460 B2 JP 3983460B2
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region
concentration
type impurity
island
semiconductor layer
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JP2000204291A
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Japanese (ja)
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JP2001077374A (ja
JP2001077374A5 (enExample
Inventor
舜平 山崎
康行 荒井
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000204291A priority Critical patent/JP3983460B2/ja
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Publication of JP2001077374A5 publication Critical patent/JP2001077374A5/ja
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Publication of JP3983460B2 publication Critical patent/JP3983460B2/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2000204291A 1999-07-06 2000-07-05 半導体装置の作製方法 Expired - Fee Related JP3983460B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000204291A JP3983460B2 (ja) 1999-07-06 2000-07-05 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP19109799 1999-07-06
JP11-191097 1999-07-06
JP2000204291A JP3983460B2 (ja) 1999-07-06 2000-07-05 半導体装置の作製方法

Related Child Applications (1)

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JP2005221101A Division JP4294622B2 (ja) 1999-07-06 2005-07-29 半導体装置の作製方法

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JP2001077374A JP2001077374A (ja) 2001-03-23
JP2001077374A5 JP2001077374A5 (enExample) 2005-10-27
JP3983460B2 true JP3983460B2 (ja) 2007-09-26

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JP2000204291A Expired - Fee Related JP3983460B2 (ja) 1999-07-06 2000-07-05 半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW588570B (en) 2001-06-18 2004-05-21 Semiconductor Energy Lab Light emitting device and method of fabricating the same
US7042024B2 (en) 2001-11-09 2006-05-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method for manufacturing the same
US6903377B2 (en) 2001-11-09 2005-06-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method for manufacturing the same
US8125601B2 (en) * 2003-01-08 2012-02-28 Samsung Electronics Co., Ltd. Upper substrate and liquid crystal display device having the same
JP3907647B2 (ja) * 2003-09-08 2007-04-18 シャープ株式会社 液晶表示装置
JP4506231B2 (ja) * 2004-03-29 2010-07-21 東レ株式会社 Ips方式液晶表示装置用カラーフィルター基板およびそれを用いたips方式液晶表示装置
KR100675636B1 (ko) * 2004-05-31 2007-02-02 엘지.필립스 엘시디 주식회사 Goldd구조 및 ldd구조의 tft를 동시에포함하는 구동회로부 일체형 액정표시장치
KR101108782B1 (ko) * 2004-07-30 2012-02-24 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR101125252B1 (ko) * 2004-12-31 2012-03-21 엘지디스플레이 주식회사 폴리 액정 표시 패널 및 그 제조 방법
CN103257491B (zh) * 2006-09-29 2017-04-19 株式会社半导体能源研究所 半导体设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864830A (ja) * 1994-08-25 1996-03-08 Sharp Corp アクティブマトリクス基板およびその製造方法
JP3948034B2 (ja) * 1995-09-06 2007-07-25 セイコーエプソン株式会社 半導体装置とその製造方法、及びアクティブマトリクス基板
US5965919A (en) * 1995-10-19 1999-10-12 Samsung Electronics Co., Ltd. Semiconductor device and a method of fabricating the same
JPH10198292A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3274081B2 (ja) * 1997-04-08 2002-04-15 松下電器産業株式会社 薄膜トランジスタの製造方法および液晶表示装置の製造方法
JPH1145999A (ja) * 1997-07-24 1999-02-16 Hitachi Ltd 半導体装置およびその製造方法ならびに画像表示装置

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JP2001077374A (ja) 2001-03-23

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