JP3981797B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP3981797B2 JP3981797B2 JP2000103216A JP2000103216A JP3981797B2 JP 3981797 B2 JP3981797 B2 JP 3981797B2 JP 2000103216 A JP2000103216 A JP 2000103216A JP 2000103216 A JP2000103216 A JP 2000103216A JP 3981797 B2 JP3981797 B2 JP 3981797B2
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- region
- layer
- semiconductor
- high refractive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 110
- 239000000758 substrate Substances 0.000 claims description 82
- 229910002601 GaN Inorganic materials 0.000 claims description 54
- 230000004888 barrier function Effects 0.000 claims description 44
- -1 gallium nitride compound Chemical class 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 2
- 150000002830 nitrogen compounds Chemical class 0.000 claims 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000013078 crystal Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000012535 impurity Substances 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910016920 AlzGa1−z Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000103216A JP3981797B2 (ja) | 2000-04-05 | 2000-04-05 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000103216A JP3981797B2 (ja) | 2000-04-05 | 2000-04-05 | 半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001291896A JP2001291896A (ja) | 2001-10-19 |
| JP2001291896A5 JP2001291896A5 (enExample) | 2006-06-15 |
| JP3981797B2 true JP3981797B2 (ja) | 2007-09-26 |
Family
ID=18616969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000103216A Expired - Fee Related JP3981797B2 (ja) | 2000-04-05 | 2000-04-05 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3981797B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903809A (zh) * | 2011-07-25 | 2013-01-30 | 晶元光电股份有限公司 | 发光二极管元件 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003058726A1 (en) * | 2001-12-28 | 2003-07-17 | Sanken Electric Co., Ltd. | Semiconductor light-emitting device, light-emitting display, method for manufacturing semiconductor light-emitting device, and method for manufacturing light-emitting display |
| TWI230473B (en) | 2003-03-10 | 2005-04-01 | Sanken Electric Co Ltd | Semiconductor light emitting device and manufacturing method thereof |
| JP5171016B2 (ja) | 2006-10-27 | 2013-03-27 | キヤノン株式会社 | 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ |
| JP6112986B2 (ja) * | 2013-06-19 | 2017-04-12 | キヤノン株式会社 | 半導体ｄｂｒおよび、半導体発光素子、固体レーザ、光音響装置、画像形成装置、および半導体ｄｂｒの製造方法 |
| KR101701041B1 (ko) * | 2015-05-27 | 2017-02-01 | 한양대학교 산학협력단 | 실리콘 다면체 상에 형성된 발광다이오드 및 이의 제조방법 |
| JP7293631B2 (ja) * | 2018-03-01 | 2023-06-20 | 株式会社リコー | 反射鏡、面発光レーザ、反射鏡の製造方法及び面発光レーザの製造方法 |
| JP7669774B2 (ja) * | 2020-04-22 | 2025-04-30 | 株式会社リコー | 反射鏡、面発光レーザ、光源、投影装置、表示装置及び投光装置 |
| CN117393671B (zh) * | 2023-12-08 | 2024-03-08 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
-
2000
- 2000-04-05 JP JP2000103216A patent/JP3981797B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903809A (zh) * | 2011-07-25 | 2013-01-30 | 晶元光电股份有限公司 | 发光二极管元件 |
| CN102903809B (zh) * | 2011-07-25 | 2016-05-11 | 晶元光电股份有限公司 | 发光二极管元件 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001291896A (ja) | 2001-10-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9070847B2 (en) | Ultraviolet semiconductor light-emitting element that emits ultraviolet light from one surface side | |
| CN102194934B (zh) | 半导体发光器件及其制造方法、以及晶片及其制造方法 | |
| US6611004B2 (en) | Gallium nitride based light emitting element | |
| US20080179605A1 (en) | Nitride semiconductor light emitting device and method for fabricating the same | |
| JPWO2004042832A1 (ja) | 半導体発光素子及びその製造方法 | |
| CN101689586A (zh) | 氮化物半导体发光元件和氮化物半导体的制造方法 | |
| JP4210823B2 (ja) | シヨットキバリアダイオード及びその製造方法 | |
| US7259447B2 (en) | Flip-chip type nitride semiconductor light emitting diode | |
| JP2006332205A (ja) | 窒化物半導体発光素子 | |
| JP3981797B2 (ja) | 半導体発光素子 | |
| JP4058590B2 (ja) | 半導体発光素子 | |
| JP4058595B2 (ja) | 半導体発光素子及びその製造方法 | |
| US20230144914A1 (en) | Method of manufacturing vertical cavity surface emitting laser element and vertical cavity surface emitting laser element | |
| JP4041908B2 (ja) | 半導体発光素子の製造方法 | |
| KR101499954B1 (ko) | 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및제조방법 | |
| JP2001313421A (ja) | 半導体発光素子及びその製造方法 | |
| JP3991193B2 (ja) | 半導体発光素子 | |
| JP4058592B2 (ja) | 半導体発光素子及びその製造方法 | |
| JP4058593B2 (ja) | 半導体発光素子 | |
| KR20050042715A (ko) | 전극 구조체, 이를 구비하는 반도체 발광 소자 및 그제조방법 | |
| JP4058594B2 (ja) | 半導体発光素子 | |
| JP4284103B2 (ja) | 酸化物半導体発光素子 | |
| JP4041906B2 (ja) | 半導体発光素子 | |
| KR101124470B1 (ko) | 반도체 발광소자 | |
| JP2011155084A (ja) | 紫外半導体発光素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040917 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060428 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070228 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070307 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070501 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070606 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070619 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100713 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100713 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110713 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110713 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120713 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120713 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130713 Year of fee payment: 6 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |