JP3973723B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3973723B2
JP3973723B2 JP04457497A JP4457497A JP3973723B2 JP 3973723 B2 JP3973723 B2 JP 3973723B2 JP 04457497 A JP04457497 A JP 04457497A JP 4457497 A JP4457497 A JP 4457497A JP 3973723 B2 JP3973723 B2 JP 3973723B2
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JP
Japan
Prior art keywords
mask
region
semiconductor film
crystalline semiconductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04457497A
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English (en)
Japanese (ja)
Other versions
JPH10223534A (ja
JPH10223534A5 (enExample
Inventor
舜平 山崎
久 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP04457497A priority Critical patent/JP3973723B2/ja
Priority to US09/021,770 priority patent/US6087245A/en
Priority to KR1019980003944A priority patent/KR100529234B1/ko
Publication of JPH10223534A publication Critical patent/JPH10223534A/ja
Publication of JPH10223534A5 publication Critical patent/JPH10223534A5/ja
Priority to KR1020050075619A priority patent/KR100607665B1/ko
Application granted granted Critical
Publication of JP3973723B2 publication Critical patent/JP3973723B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP04457497A 1997-02-12 1997-02-12 半導体装置の作製方法 Expired - Fee Related JP3973723B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP04457497A JP3973723B2 (ja) 1997-02-12 1997-02-12 半導体装置の作製方法
US09/021,770 US6087245A (en) 1997-02-12 1998-02-11 Method of gettering crystallization catalyst for forming a silicon film
KR1019980003944A KR100529234B1 (ko) 1997-02-12 1998-02-11 반도체장치의제조방법
KR1020050075619A KR100607665B1 (ko) 1997-02-12 2005-08-18 반도체장치 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04457497A JP3973723B2 (ja) 1997-02-12 1997-02-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10223534A JPH10223534A (ja) 1998-08-21
JPH10223534A5 JPH10223534A5 (enExample) 2005-01-06
JP3973723B2 true JP3973723B2 (ja) 2007-09-12

Family

ID=12695286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04457497A Expired - Fee Related JP3973723B2 (ja) 1997-02-12 1997-02-12 半導体装置の作製方法

Country Status (3)

Country Link
US (1) US6087245A (enExample)
JP (1) JP3973723B2 (enExample)
KR (2) KR100529234B1 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331457B1 (en) * 1997-01-24 2001-12-18 Semiconductor Energy Laboratory., Ltd. Co. Method for manufacturing a semiconductor thin film
JP3976828B2 (ja) 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
JP3295346B2 (ja) * 1997-07-14 2002-06-24 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ
JPH1140498A (ja) 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4073533B2 (ja) 1998-02-09 2008-04-09 株式会社半導体エネルギー研究所 情報処理装置
US6821710B1 (en) * 1998-02-11 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7248232B1 (en) 1998-02-25 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Information processing device
JP4531177B2 (ja) * 1998-12-28 2010-08-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6380007B1 (en) * 1998-12-28 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
TW535454B (en) 1999-10-21 2003-06-01 Semiconductor Energy Lab Electro-optical device
TW587239B (en) * 1999-11-30 2004-05-11 Semiconductor Energy Lab Electric device
US6599818B2 (en) * 2000-10-10 2003-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
TW530427B (en) * 2000-10-10 2003-05-01 Semiconductor Energy Lab Method of fabricating and/or repairing a light emitting device
JP2002176000A (ja) * 2000-12-05 2002-06-21 Semiconductor Energy Lab Co Ltd 熱処理装置及び半導体装置の製造方法
US7045444B2 (en) * 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
JP4932081B2 (ja) * 2000-12-27 2012-05-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7534977B2 (en) * 2000-12-28 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Heat treatment apparatus and method of manufacturing a semiconductor device
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7141822B2 (en) * 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6777249B2 (en) * 2001-06-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of repairing a light-emitting device, and method of manufacturing a light-emitting device
JP2002358031A (ja) 2001-06-01 2002-12-13 Semiconductor Energy Lab Co Ltd 発光装置及びその駆動方法
JP2003077832A (ja) * 2001-08-30 2003-03-14 Sharp Corp 半導体装置及びその製造方法
TW563088B (en) 2001-09-17 2003-11-21 Semiconductor Energy Lab Light emitting device, method of driving a light emitting device, and electronic equipment
JP3810725B2 (ja) * 2001-09-21 2006-08-16 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP4024557B2 (ja) 2002-02-28 2007-12-19 株式会社半導体エネルギー研究所 発光装置、電子機器
US7226332B2 (en) * 2002-04-30 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP3949027B2 (ja) * 2002-08-06 2007-07-25 富士通株式会社 アナログスイッチ回路
JP4574127B2 (ja) * 2003-03-26 2010-11-04 株式会社半導体エネルギー研究所 素子基板及び発光装置
JP4531343B2 (ja) * 2003-03-26 2010-08-25 株式会社半導体エネルギー研究所 駆動回路
US7223615B2 (en) * 2003-03-26 2007-05-29 Advanced Micro Devices, Inc. High emissivity capacitor structure
TWI254456B (en) * 2003-06-12 2006-05-01 Ind Tech Res Inst A thermal plate crystallization method
JP4641710B2 (ja) 2003-06-18 2011-03-02 株式会社半導体エネルギー研究所 表示装置
US7220603B2 (en) * 2003-09-19 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device and manufacturing apparatus
US7127367B2 (en) 2003-10-27 2006-10-24 Applied Materials, Inc. Tailored temperature uniformity
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US7595775B2 (en) * 2003-12-19 2009-09-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device with reverse biasing circuit
US20050276292A1 (en) * 2004-05-28 2005-12-15 Karl Schrodinger Circuit arrangement for operating a laser diode
TWI467541B (zh) 2004-09-16 2015-01-01 半導體能源研究所股份有限公司 顯示裝置和其驅動方法
KR100788551B1 (ko) 2006-12-29 2007-12-26 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100788545B1 (ko) * 2006-12-29 2007-12-26 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
US8222574B2 (en) * 2007-01-15 2012-07-17 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
JP4954047B2 (ja) * 2007-12-17 2012-06-13 シャープ株式会社 半導体装置及びその製造方法
US8111978B2 (en) * 2008-07-11 2012-02-07 Applied Materials, Inc. Rapid thermal processing chamber with shower head
US11189493B2 (en) 2018-02-19 2021-11-30 Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same

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US5639698A (en) * 1993-02-15 1997-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3190482B2 (ja) * 1993-05-21 2001-07-23 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5923962A (en) * 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP3562590B2 (ja) * 1993-12-01 2004-09-08 株式会社半導体エネルギー研究所 半導体装置作製方法
JP2860869B2 (ja) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3221473B2 (ja) * 1994-02-03 2001-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3192546B2 (ja) * 1994-04-15 2001-07-30 シャープ株式会社 半導体装置およびその製造方法
JP3621151B2 (ja) * 1994-06-02 2005-02-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
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US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
JP3277082B2 (ja) * 1994-11-22 2002-04-22 シャープ株式会社 半導体装置およびその製造方法
TW355845B (en) * 1995-03-27 1999-04-11 Semiconductor Energy Lab Co Ltd Semiconductor device and a method of manufacturing the same
KR100265179B1 (ko) * 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
JP3476320B2 (ja) * 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Also Published As

Publication number Publication date
KR100607665B1 (ko) 2006-08-02
KR19980071254A (ko) 1998-10-26
JPH10223534A (ja) 1998-08-21
US6087245A (en) 2000-07-11
KR100529234B1 (ko) 2006-02-28
KR20060086807A (ko) 2006-08-01

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