JP3969865B2 - フッ化物結晶の製造方法 - Google Patents

フッ化物結晶の製造方法 Download PDF

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Publication number
JP3969865B2
JP3969865B2 JP29929298A JP29929298A JP3969865B2 JP 3969865 B2 JP3969865 B2 JP 3969865B2 JP 29929298 A JP29929298 A JP 29929298A JP 29929298 A JP29929298 A JP 29929298A JP 3969865 B2 JP3969865 B2 JP 3969865B2
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Japan
Prior art keywords
fluoride
raw material
crystal
producing
melting
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Expired - Fee Related
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JP29929298A
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English (en)
Japanese (ja)
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JPH11228292A5 (enExample
JPH11228292A (ja
Inventor
点 大場
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Canon Inc
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Canon Inc
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Priority to JP29929298A priority Critical patent/JP3969865B2/ja
Publication of JPH11228292A publication Critical patent/JPH11228292A/ja
Publication of JPH11228292A5 publication Critical patent/JPH11228292A5/ja
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Publication of JP3969865B2 publication Critical patent/JP3969865B2/ja
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  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP29929298A 1997-10-24 1998-10-21 フッ化物結晶の製造方法 Expired - Fee Related JP3969865B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29929298A JP3969865B2 (ja) 1997-10-24 1998-10-21 フッ化物結晶の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-293050 1997-10-24
JP29305097 1997-10-24
JP29929298A JP3969865B2 (ja) 1997-10-24 1998-10-21 フッ化物結晶の製造方法

Publications (3)

Publication Number Publication Date
JPH11228292A JPH11228292A (ja) 1999-08-24
JPH11228292A5 JPH11228292A5 (enExample) 2004-11-18
JP3969865B2 true JP3969865B2 (ja) 2007-09-05

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Application Number Title Priority Date Filing Date
JP29929298A Expired - Fee Related JP3969865B2 (ja) 1997-10-24 1998-10-21 フッ化物結晶の製造方法

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JP (1) JP3969865B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3596337B2 (ja) 1998-03-25 2004-12-02 住友電気工業株式会社 化合物半導体結晶の製造方法
US6602345B1 (en) 1999-06-29 2003-08-05 American Crystal Technologies, Inc., Heater arrangement for crystal growth furnace
US6537372B1 (en) 1999-06-29 2003-03-25 American Crystal Technologies, Inc. Heater arrangement for crystal growth furnace
JP2001244188A (ja) 2000-03-02 2001-09-07 Optron Inc 真空紫外用光学部材およびこれを用いた露光装置ならびにデバイス製造方法
DE10010485C2 (de) * 2000-03-03 2002-10-02 Schott Glas Verfahren zur Herstellung von hochhomogenen, grossformatigen Einkristallen aus Calciumfluorid sowie deren Verwendung
CN1507682A (zh) * 2001-03-02 2004-06-23 �����ɷ� 高重复率紫外准分子激光器
DE102004008749A1 (de) * 2004-02-23 2005-09-08 Schott Ag Verfahren zur Herstellung eines großvolumigen CaF2-Einkristalles mit geringer Streuung und verbesserter Laserstabilität, sowie ein solcher Kristall und dessen Verwendung
JP2005289776A (ja) 2004-04-05 2005-10-20 Canon Inc 結晶製造方法および結晶製造装置
CA2724457A1 (en) * 2008-05-16 2009-11-19 National Institute Of Advanced Industrial Science And Technology Method of producing pretreated metal fluorides and fluoride crystals
CN102616745B (zh) * 2012-04-06 2016-12-14 周俊和 一种氟化盐生产方法
JP6407604B2 (ja) * 2014-07-25 2018-10-17 岩谷産業株式会社 蛍石の製造方法
CN114622279A (zh) * 2022-03-18 2022-06-14 四川奇峰景行光学科技有限公司 一种用于氟化物多晶原料处理装置及方法
CN116673273B (zh) * 2023-08-03 2023-10-27 北京奇峰蓝达光学科技发展有限公司 一种氟化钙原料表面去杂方法及其装置

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Publication number Publication date
JPH11228292A (ja) 1999-08-24

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