JP3965610B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP3965610B2
JP3965610B2 JP20773797A JP20773797A JP3965610B2 JP 3965610 B2 JP3965610 B2 JP 3965610B2 JP 20773797 A JP20773797 A JP 20773797A JP 20773797 A JP20773797 A JP 20773797A JP 3965610 B2 JP3965610 B2 JP 3965610B2
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type
semiconductor device
semiconductor
manufacturing
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Japanese (ja)
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JPH1154843A5 (enExample
JPH1154843A (ja
Inventor
▲玲▼子 副島
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Fujitsu Ltd
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Fujitsu Ltd
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JP20773797A 1997-08-01 1997-08-01 半導体装置及びその製造方法 Expired - Lifetime JP3965610B2 (ja)

Priority Applications (1)

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JP20773797A JP3965610B2 (ja) 1997-08-01 1997-08-01 半導体装置及びその製造方法

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Application Number Priority Date Filing Date Title
JP20773797A JP3965610B2 (ja) 1997-08-01 1997-08-01 半導体装置及びその製造方法

Publications (3)

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JPH1154843A JPH1154843A (ja) 1999-02-26
JPH1154843A5 JPH1154843A5 (enExample) 2005-04-21
JP3965610B2 true JP3965610B2 (ja) 2007-08-29

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JP20773797A Expired - Lifetime JP3965610B2 (ja) 1997-08-01 1997-08-01 半導体装置及びその製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10679861B2 (en) 2017-03-24 2020-06-09 Toyoda Gosei Co., Ltd. Manufacturing method of a semiconductor device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19954319C1 (de) 1999-11-11 2001-05-03 Vishay Semiconductor Gmbh Verfahren zum Herstellen von mehrschichtigen Kontaktelektroden für Verbindungshalbeiter und Anordnung
JP3912044B2 (ja) * 2001-06-06 2007-05-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
WO2005059982A1 (en) * 2003-12-17 2005-06-30 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof
JP2005203765A (ja) * 2003-12-17 2005-07-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子およびその負極
CN1305186C (zh) * 2003-12-29 2007-03-14 中国科学院半导体研究所 电泵浦边发射半导体微腔激光器的制作方法
JP4030556B2 (ja) 2005-06-30 2008-01-09 シャープ株式会社 窒化物半導体レーザ素子および窒化物半導体レーザ装置
JP2007059719A (ja) * 2005-08-25 2007-03-08 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体
JP2007188928A (ja) * 2006-01-11 2007-07-26 Matsushita Electric Ind Co Ltd 窒化物半導体発光素子
DE102007012359A1 (de) * 2007-03-14 2008-09-25 Fupo Electronics Corp. Verfahren zur Herstellung von Bondpad eines epitaxischen Leuchtdiodenchips und dieser Leuchtdiodenchip
JP2007173866A (ja) * 2007-03-16 2007-07-05 Sumitomo Electric Ind Ltd 半導体発光素子
JP2009182217A (ja) * 2008-01-31 2009-08-13 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP6111818B2 (ja) 2013-04-24 2017-04-12 三菱電機株式会社 半導体素子、半導体素子の製造方法
JP6773260B1 (ja) * 2020-02-06 2020-10-21 三菱電機株式会社 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10679861B2 (en) 2017-03-24 2020-06-09 Toyoda Gosei Co., Ltd. Manufacturing method of a semiconductor device

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Publication number Publication date
JPH1154843A (ja) 1999-02-26

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