JP3963233B2 - 窒化ガリウム系化合物半導体発光素子及びその製造方法 - Google Patents

窒化ガリウム系化合物半導体発光素子及びその製造方法 Download PDF

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JP3963233B2
JP3963233B2 JP4023897A JP4023897A JP3963233B2 JP 3963233 B2 JP3963233 B2 JP 3963233B2 JP 4023897 A JP4023897 A JP 4023897A JP 4023897 A JP4023897 A JP 4023897A JP 3963233 B2 JP3963233 B2 JP 3963233B2
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layer
conductivity type
type
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gallium nitride
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Expired - Fee Related
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JP4023897A
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Japanese (ja)
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JPH09298343A (ja
JPH09298343A5 (enExample
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俊雄 幡
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Sharp Corp
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Sharp Corp
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JP4023897A 1996-03-07 1997-02-25 窒化ガリウム系化合物半導体発光素子及びその製造方法 Expired - Fee Related JP3963233B2 (ja)

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Application Number Priority Date Filing Date Title
JP4023897A JP3963233B2 (ja) 1996-03-07 1997-02-25 窒化ガリウム系化合物半導体発光素子及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-50275 1996-03-07
JP5027596 1996-03-07
JP4023897A JP3963233B2 (ja) 1996-03-07 1997-02-25 窒化ガリウム系化合物半導体発光素子及びその製造方法

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JPH09298343A JPH09298343A (ja) 1997-11-18
JPH09298343A5 JPH09298343A5 (enExample) 2005-01-06
JP3963233B2 true JP3963233B2 (ja) 2007-08-22

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JP4023897A Expired - Fee Related JP3963233B2 (ja) 1996-03-07 1997-02-25 窒化ガリウム系化合物半導体発光素子及びその製造方法

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3946337B2 (ja) * 1997-02-21 2007-07-18 株式会社東芝 窒化ガリウム系化合物半導体レーザ
JP4040192B2 (ja) * 1998-11-26 2008-01-30 ソニー株式会社 半導体発光素子の製造方法
JP2003069154A (ja) 2001-06-11 2003-03-07 Sharp Corp 半導体レーザ素子およびその製造方法
JP4483615B2 (ja) * 2004-06-03 2010-06-16 日立電線株式会社 半導体発光素子用エピタキシャルウェハ及び半導体発光素子
US7508001B2 (en) 2004-06-21 2009-03-24 Panasonic Corporation Semiconductor laser device and manufacturing method thereof

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JPH09298343A (ja) 1997-11-18

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