JP3951738B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3951738B2
JP3951738B2 JP2002045632A JP2002045632A JP3951738B2 JP 3951738 B2 JP3951738 B2 JP 3951738B2 JP 2002045632 A JP2002045632 A JP 2002045632A JP 2002045632 A JP2002045632 A JP 2002045632A JP 3951738 B2 JP3951738 B2 JP 3951738B2
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JP2002045632A
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Japanese (ja)
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JP2003152198A (ja
JP2003152198A5 (enExample
Inventor
道生 根本
彰 西浦
達也 内藤
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Fuji Electric Co Ltd
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Fuji Electric Device Technology Co Ltd
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Priority to JP2002045632A priority Critical patent/JP3951738B2/ja
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Publication of JP2003152198A5 publication Critical patent/JP2003152198A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

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  • Electrodes Of Semiconductors (AREA)
JP2002045632A 2001-02-23 2002-02-22 半導体装置の製造方法 Expired - Lifetime JP3951738B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002045632A JP3951738B2 (ja) 2001-02-23 2002-02-22 半導体装置の製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001048631 2001-02-23
JP2001-48631 2001-02-23
JP2001259928 2001-08-29
JP2001-259928 2001-08-29
JP2002045632A JP3951738B2 (ja) 2001-02-23 2002-02-22 半導体装置の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006348359A Division JP4770729B2 (ja) 2001-02-23 2006-12-25 半導体装置
JP2006348360A Division JP2007096348A (ja) 2001-02-23 2006-12-25 半導体装置の製造方法

Publications (3)

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JP2003152198A JP2003152198A (ja) 2003-05-23
JP2003152198A5 JP2003152198A5 (enExample) 2004-08-05
JP3951738B2 true JP3951738B2 (ja) 2007-08-01

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JP2002045632A Expired - Lifetime JP3951738B2 (ja) 2001-02-23 2002-02-22 半導体装置の製造方法

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4000927B2 (ja) * 2002-07-03 2007-10-31 富士電機デバイステクノロジー株式会社 半導体装置およびその製造方法
DE102005026408B3 (de) 2005-06-08 2007-02-01 Infineon Technologies Ag Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone
JP5104314B2 (ja) * 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
DE102007028316B3 (de) * 2007-06-20 2008-10-30 Semikron Elektronik Gmbh & Co. Kg Halbleiterbauelement mit Pufferschicht und Verfahren zu dessen Herstellung
EP2073274A1 (en) * 2007-12-19 2009-06-24 ABB Technology AG Diode
JP5374883B2 (ja) 2008-02-08 2013-12-25 富士電機株式会社 半導体装置およびその製造方法
JP5439763B2 (ja) 2008-08-14 2014-03-12 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2010041302A1 (ja) * 2008-10-06 2010-04-15 株式会社 東芝 抵抗変化メモリ
KR101288263B1 (ko) * 2009-05-28 2013-07-26 도요타 지도샤（주） 다이오드의 제조 방법 및 다이오드
CN102687277B (zh) 2009-11-02 2016-01-20 富士电机株式会社 半导体器件以及用于制造半导体器件的方法
JP5741716B2 (ja) 2012-01-19 2015-07-01 富士電機株式会社 半導体装置およびその製造方法
EP2790209B1 (en) 2012-03-30 2019-09-25 Fuji Electric Co., Ltd. Manufacturing method for semiconductor device
WO2013147275A1 (ja) * 2012-03-30 2013-10-03 富士電機株式会社 半導体装置の製造方法
EP2913854B1 (en) 2012-10-23 2020-05-27 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing same
JP6293688B2 (ja) * 2015-03-02 2018-03-14 株式会社豊田中央研究所 ダイオード及びそのダイオードを内蔵する逆導通ｉｇｂｔ
JP7126361B2 (ja) * 2018-03-08 2022-08-26 三菱電機株式会社 半導体装置、電力変換装置、及び、半導体装置の製造方法
DE112019000094T5 (de) * 2018-03-19 2020-09-24 Fuji Electric Co., Ltd. Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung
CN116936603A (zh) * 2022-04-07 2023-10-24 苏州东微半导体股份有限公司 半导体二极管及其制造方法

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