JP3949443B2 - ディセーブルオプションを有する変換スイッチ回路 - Google Patents
ディセーブルオプションを有する変換スイッチ回路 Download PDFInfo
- Publication number
- JP3949443B2 JP3949443B2 JP2001383546A JP2001383546A JP3949443B2 JP 3949443 B2 JP3949443 B2 JP 3949443B2 JP 2001383546 A JP2001383546 A JP 2001383546A JP 2001383546 A JP2001383546 A JP 2001383546A JP 3949443 B2 JP3949443 B2 JP 3949443B2
- Authority
- JP
- Japan
- Prior art keywords
- coupled
- node
- circuit
- potential
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 68
- 230000005540 biological transmission Effects 0.000 claims description 18
- 230000001052 transient effect Effects 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims 10
- 238000005245 sintering Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 7
- 230000000295 complement effect Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000000872 buffer Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Landscapes
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/737,977 US6433613B1 (en) | 2000-12-15 | 2000-12-15 | Translating switch circuit with disabling option |
| US09/737977 | 2000-12-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002252556A JP2002252556A (ja) | 2002-09-06 |
| JP2002252556A5 JP2002252556A5 (enExample) | 2005-07-28 |
| JP3949443B2 true JP3949443B2 (ja) | 2007-07-25 |
Family
ID=24966055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001383546A Expired - Fee Related JP3949443B2 (ja) | 2000-12-15 | 2001-12-17 | ディセーブルオプションを有する変換スイッチ回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6433613B1 (enExample) |
| JP (1) | JP3949443B2 (enExample) |
| DE (1) | DE10161052A1 (enExample) |
| TW (1) | TW518823B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7145378B2 (en) * | 2001-07-16 | 2006-12-05 | Fairchild Semiconductor Corporation | Configurable switch with selectable level shifting |
| WO2003079566A2 (en) * | 2002-03-11 | 2003-09-25 | Fairchild Semiconductor Corporation | Drain activated/deactivated ac coupled bandpass rf switch |
| US8289066B2 (en) * | 2009-12-30 | 2012-10-16 | Stmicroelectronics Asia Pacific Pte Ltd. | Gate control circuit for high bandwidth switch design |
| JP5431992B2 (ja) * | 2010-02-09 | 2014-03-05 | セイコーインスツル株式会社 | トランスミッションゲート及び半導体装置 |
| FR2979173B1 (fr) * | 2011-08-19 | 2013-08-16 | St Microelectronics Grenoble 2 | Commutateur analogique basse tension |
| CN102437843B (zh) * | 2011-11-30 | 2013-10-16 | 中国科学院微电子研究所 | 高电压开关电路 |
| US8729951B1 (en) | 2012-11-27 | 2014-05-20 | Freescale Semiconductor, Inc. | Voltage ramp-up protection |
| US9929730B2 (en) * | 2014-12-03 | 2018-03-27 | Cisco Technology, Inc. | Efficiently managing multiple power supplies |
| CN113300701B (zh) * | 2021-06-21 | 2024-05-28 | 深圳市誉娇诚科技有限公司 | 一种可防止高压继电器误动作的硬件防抖自锁电路 |
| CN117406847B (zh) * | 2023-12-14 | 2024-04-09 | 浙江地芯引力科技有限公司 | 芯片及其供电电路和电子设备 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3272298B2 (ja) * | 1998-04-27 | 2002-04-08 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 放電回路を備えたスイッチ回路および電子機器 |
| US6052019A (en) * | 1998-10-29 | 2000-04-18 | Pericom Semiconductor Corp. | Undershoot-isolating MOS bus switch |
| US5963080A (en) * | 1998-12-23 | 1999-10-05 | Fairchild Semiconductor Corporation | Undershoot hardened FET switch |
-
2000
- 2000-12-15 US US09/737,977 patent/US6433613B1/en not_active Expired - Lifetime
-
2001
- 2001-12-11 TW TW090130619A patent/TW518823B/zh not_active IP Right Cessation
- 2001-12-12 DE DE10161052A patent/DE10161052A1/de not_active Withdrawn
- 2001-12-17 JP JP2001383546A patent/JP3949443B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW518823B (en) | 2003-01-21 |
| DE10161052A1 (de) | 2002-10-10 |
| US6433613B1 (en) | 2002-08-13 |
| JP2002252556A (ja) | 2002-09-06 |
| US20020075060A1 (en) | 2002-06-20 |
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