JP3949209B2 - 誘電体膜の成膜方法 - Google Patents
誘電体膜の成膜方法 Download PDFInfo
- Publication number
- JP3949209B2 JP3949209B2 JP03652797A JP3652797A JP3949209B2 JP 3949209 B2 JP3949209 B2 JP 3949209B2 JP 03652797 A JP03652797 A JP 03652797A JP 3652797 A JP3652797 A JP 3652797A JP 3949209 B2 JP3949209 B2 JP 3949209B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- film
- dielectric film
- film formation
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 30
- 230000015572 biosynthetic process Effects 0.000 title claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 39
- 229910010293 ceramic material Inorganic materials 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910002367 SrTiO Inorganic materials 0.000 claims description 2
- 230000002159 abnormal effect Effects 0.000 description 14
- 239000000919 ceramic Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000000428 dust Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910015802 BaSr Inorganic materials 0.000 description 5
- 206010021143 Hypoxia Diseases 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03652797A JP3949209B2 (ja) | 1997-02-20 | 1997-02-20 | 誘電体膜の成膜方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03652797A JP3949209B2 (ja) | 1997-02-20 | 1997-02-20 | 誘電体膜の成膜方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10237640A JPH10237640A (ja) | 1998-09-08 |
| JPH10237640A5 JPH10237640A5 (enExample) | 2004-11-25 |
| JP3949209B2 true JP3949209B2 (ja) | 2007-07-25 |
Family
ID=12472280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03652797A Expired - Lifetime JP3949209B2 (ja) | 1997-02-20 | 1997-02-20 | 誘電体膜の成膜方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3949209B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5414340B2 (ja) * | 2009-04-24 | 2014-02-12 | 株式会社アルバック | スパッタリング方法 |
| JP6680482B2 (ja) * | 2015-08-11 | 2020-04-15 | 株式会社高純度化学研究所 | 強誘電体薄膜形成用スパッタリングターゲット及びその製造方法 |
| CN114729443A (zh) * | 2019-11-28 | 2022-07-08 | 株式会社爱发科 | 成膜方法 |
-
1997
- 1997-02-20 JP JP03652797A patent/JP3949209B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10237640A (ja) | 1998-09-08 |
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