JP3935372B2 - 改良型エミッタ−ベース接合を持つヘテロ接合バイポーラトランジスタ及びその製造方法 - Google Patents

改良型エミッタ−ベース接合を持つヘテロ接合バイポーラトランジスタ及びその製造方法 Download PDF

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Publication number
JP3935372B2
JP3935372B2 JP2002049395A JP2002049395A JP3935372B2 JP 3935372 B2 JP3935372 B2 JP 3935372B2 JP 2002049395 A JP2002049395 A JP 2002049395A JP 2002049395 A JP2002049395 A JP 2002049395A JP 3935372 B2 JP3935372 B2 JP 3935372B2
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Japan
Prior art keywords
base
emitter
inp
intermediate layer
gaassb
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Expired - Lifetime
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JP2002049395A
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Japanese (ja)
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JP2002270615A (ja
JP2002270615A5 (cg-RX-API-DMAC7.html
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ニコラス・ジェイ・モール
ユ−ミン・ハン
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Agilent Technologies Inc
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Agilent Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 

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  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP2002049395A 2001-02-27 2002-02-26 改良型エミッタ−ベース接合を持つヘテロ接合バイポーラトランジスタ及びその製造方法 Expired - Lifetime JP3935372B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US796180 2001-02-27
US09/796,180 US6696710B2 (en) 2001-02-27 2001-02-27 Heterojunction bipolar transistor (HBT) having an improved emitter-base junction

Publications (3)

Publication Number Publication Date
JP2002270615A JP2002270615A (ja) 2002-09-20
JP2002270615A5 JP2002270615A5 (cg-RX-API-DMAC7.html) 2005-08-25
JP3935372B2 true JP3935372B2 (ja) 2007-06-20

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JP2002049395A Expired - Lifetime JP3935372B2 (ja) 2001-02-27 2002-02-26 改良型エミッタ−ベース接合を持つヘテロ接合バイポーラトランジスタ及びその製造方法

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US (1) US6696710B2 (cg-RX-API-DMAC7.html)
EP (1) EP1235278A3 (cg-RX-API-DMAC7.html)
JP (1) JP3935372B2 (cg-RX-API-DMAC7.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6917061B2 (en) * 2001-07-20 2005-07-12 Microlink Devices, Inc. AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor
US6822274B2 (en) * 2003-02-03 2004-11-23 Agilent Technologies, Inc. Heterojunction semiconductor device having an intermediate layer for providing an improved junction
US6960820B2 (en) 2003-07-01 2005-11-01 International Business Machines Corporation Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same
US7242038B2 (en) 2004-07-01 2007-07-10 Nippon Telegraph And Telephone Corporation Heterojunction bipolar transistor
US7297589B2 (en) * 2005-04-08 2007-11-20 The Board Of Trustees Of The University Of Illinois Transistor device and method
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US20070102729A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US7439558B2 (en) 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
US8716096B2 (en) 2011-12-13 2014-05-06 International Business Machines Corporation Self-aligned emitter-base in advanced BiCMOS technology
CN102646703B (zh) * 2012-05-07 2014-12-10 中国电子科技集团公司第五十五研究所 单晶InP基化合物半导体材料薄膜的外延结构
CN103021847B (zh) * 2012-11-29 2015-03-25 中国电子科技集团公司第五十五研究所 一种实现镓砷锑双异质结双极型晶体管基极金属化的方法
TWI835924B (zh) * 2019-11-18 2024-03-21 晶元光電股份有限公司 光偵測元件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4821082A (en) 1987-10-30 1989-04-11 International Business Machines Corporation Heterojunction bipolar transistor with substantially aligned energy levels
JPH05226358A (ja) * 1992-02-10 1993-09-03 Furukawa Electric Co Ltd:The ヘテロ接合バイポーラトランジスタ
JPH05335615A (ja) 1992-05-27 1993-12-17 Canon Inc 光電変換装置
US5349201A (en) 1992-05-28 1994-09-20 Hughes Aircraft Company NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate
US5365077A (en) * 1993-01-22 1994-11-15 Hughes Aircraft Company Gain-stable NPN heterojunction bipolar transistor
KR100275540B1 (ko) * 1997-09-23 2000-12-15 정선종 초자기정렬 쌍극자 트랜지스터 장치 및 그 제조방법
US5912481A (en) * 1997-09-29 1999-06-15 National Scientific Corp. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
AU5631900A (en) 1999-06-22 2001-01-09 Hrl Laboratories, Llc Single heterojunction inp-collector bjt device and method

Also Published As

Publication number Publication date
EP1235278A2 (en) 2002-08-28
US20020117657A1 (en) 2002-08-29
JP2002270615A (ja) 2002-09-20
EP1235278A3 (en) 2003-01-02
US6696710B2 (en) 2004-02-24

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