JP3920550B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

Info

Publication number
JP3920550B2
JP3920550B2 JP2000295268A JP2000295268A JP3920550B2 JP 3920550 B2 JP3920550 B2 JP 3920550B2 JP 2000295268 A JP2000295268 A JP 2000295268A JP 2000295268 A JP2000295268 A JP 2000295268A JP 3920550 B2 JP3920550 B2 JP 3920550B2
Authority
JP
Japan
Prior art keywords
memory cell
data
data transfer
semiconductor memory
cell unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000295268A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001167592A5 (enExample
JP2001167592A (ja
Inventor
充宏 野口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000295268A priority Critical patent/JP3920550B2/ja
Publication of JP2001167592A publication Critical patent/JP2001167592A/ja
Publication of JP2001167592A5 publication Critical patent/JP2001167592A5/ja
Application granted granted Critical
Publication of JP3920550B2 publication Critical patent/JP3920550B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP2000295268A 1999-09-27 2000-09-27 不揮発性半導体記憶装置 Expired - Fee Related JP3920550B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000295268A JP3920550B2 (ja) 1999-09-27 2000-09-27 不揮発性半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP27233299 1999-09-27
JP11-272332 1999-09-27
JP2000295268A JP3920550B2 (ja) 1999-09-27 2000-09-27 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2001167592A JP2001167592A (ja) 2001-06-22
JP2001167592A5 JP2001167592A5 (enExample) 2004-12-02
JP3920550B2 true JP3920550B2 (ja) 2007-05-30

Family

ID=26550151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000295268A Expired - Fee Related JP3920550B2 (ja) 1999-09-27 2000-09-27 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JP3920550B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7177197B2 (en) 2001-09-17 2007-02-13 Sandisk Corporation Latched programming of memory and method
JP3984209B2 (ja) 2003-07-31 2007-10-03 株式会社東芝 半導体記憶装置
JP4519612B2 (ja) * 2004-11-16 2010-08-04 株式会社東芝 不揮発性半導体記憶装置
KR100729351B1 (ko) * 2004-12-31 2007-06-15 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 프로그램 방법
JP4836487B2 (ja) * 2005-04-28 2011-12-14 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP5020608B2 (ja) * 2005-11-23 2012-09-05 三星電子株式会社 低負荷ビットライン構造を有する不揮発性半導体メモリ及びそのプログラミング方法
JP4405489B2 (ja) 2006-08-31 2010-01-27 株式会社東芝 不揮発性半導体メモリ
GB2460365B (en) * 2007-04-26 2012-03-28 Agere Systems Inc Memory device with error correction capability and efficient partial word write operation
US7791976B2 (en) * 2008-04-24 2010-09-07 Qualcomm Incorporated Systems and methods for dynamic power savings in electronic memory operation
JP5367641B2 (ja) * 2010-06-03 2013-12-11 株式会社東芝 不揮発性半導体記憶装置
JP6659478B2 (ja) 2016-06-17 2020-03-04 キオクシア株式会社 半導体記憶装置

Also Published As

Publication number Publication date
JP2001167592A (ja) 2001-06-22

Similar Documents

Publication Publication Date Title
JP7117406B2 (ja) ３次元垂直ｎｏｒフラッシュ薄膜トランジスタストリング
JP7680985B2 (ja) 積層水平アクティブストリップに配置され、垂直制御ゲートを有するマルチゲートｎｏｒフラッシュ薄膜トランジスタストリング
US20210366544A1 (en) Three-dimensional vertical nor flash thin-film transistor strings
US7177187B2 (en) Semiconductor device having a nonvolatile memory array and an authentication circuit arranged in a vertical stack configuration
US6136652A (en) Preventing dielectric thickening over a channel area of a split-gate transistor
KR100470846B1 (ko) 반도체 기억 장치의 데이터 기입 방법 및 반도체 집적회로 장치
US7209389B2 (en) Trap read only non-volatile memory (TROM)
US7471563B2 (en) Semiconductor memory device
KR100373670B1 (ko) 불휘발성 반도체 기억 장치
JP3920550B2 (ja) 不揮発性半導体記憶装置
JP2967346B2 (ja) 不揮発性メモリ装置の製造方法
US6980472B2 (en) Device and method to read a 2-transistor flash memory cell
JP2025001760A (ja) 半導体装置
CN115731965A (zh) 包含栅极泄漏晶体管的存储器装置
TWI489593B (zh) 反及閘快閃記憶體之熱載子程式化
JPH08250609A (ja) 半導体記憶装置及びその使用方法
JPH0332067A (ja) 不揮発性半導体記憶装置
JP2004280965A (ja) 不揮発性半導体記憶装置およびそのデータ読み出し方法
TW201423752A (zh) 非揮發性動態隨機存取記憶體裝置之結構及操作方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20031212

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20031212

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060911

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070201

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070213

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070215

R151 Written notification of patent or utility model registration

Ref document number: 3920550

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100223

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110223

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120223

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120223

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130223

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140223

Year of fee payment: 7

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees