JP3912024B2 - Ｐｉｎ構造のラテラル型半導体受光素子 - Google Patents

Ｐｉｎ構造のラテラル型半導体受光素子 Download PDF

Info

Publication number
JP3912024B2
JP3912024B2 JP2001110169A JP2001110169A JP3912024B2 JP 3912024 B2 JP3912024 B2 JP 3912024B2 JP 2001110169 A JP2001110169 A JP 2001110169A JP 2001110169 A JP2001110169 A JP 2001110169A JP 3912024 B2 JP3912024 B2 JP 3912024B2
Authority
JP
Japan
Prior art keywords
layer
electrode
lateral
pin structure
dye
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001110169A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002314117A (ja
JP2002314117A5 (enExample
Inventor
篤 原田
次男 井出
昇二郎 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2001110169A priority Critical patent/JP3912024B2/ja
Publication of JP2002314117A publication Critical patent/JP2002314117A/ja
Publication of JP2002314117A5 publication Critical patent/JP2002314117A5/ja
Application granted granted Critical
Publication of JP3912024B2 publication Critical patent/JP3912024B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Light Receiving Elements (AREA)
JP2001110169A 2001-04-09 2001-04-09 Ｐｉｎ構造のラテラル型半導体受光素子 Expired - Fee Related JP3912024B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001110169A JP3912024B2 (ja) 2001-04-09 2001-04-09 Ｐｉｎ構造のラテラル型半導体受光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001110169A JP3912024B2 (ja) 2001-04-09 2001-04-09 Ｐｉｎ構造のラテラル型半導体受光素子

Publications (3)

Publication Number Publication Date
JP2002314117A JP2002314117A (ja) 2002-10-25
JP2002314117A5 JP2002314117A5 (enExample) 2005-02-24
JP3912024B2 true JP3912024B2 (ja) 2007-05-09

Family

ID=18961992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001110169A Expired - Fee Related JP3912024B2 (ja) 2001-04-09 2001-04-09 Ｐｉｎ構造のラテラル型半導体受光素子

Country Status (1)

Country Link
JP (1) JP3912024B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021103300A1 (zh) * 2019-11-29 2021-06-03 武汉华星光电技术有限公司 光电二极管及其制备方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7157686B2 (en) 2002-12-06 2007-01-02 Delta Electronics, Inc. Optical receiver
US7012314B2 (en) * 2002-12-18 2006-03-14 Agere Systems Inc. Semiconductor devices with reduced active region defects and unique contacting schemes
JP4232814B2 (ja) * 2006-11-14 2009-03-04 沖電気工業株式会社 フォトダイオードおよびそれを備えたフォトｉｃ
JP5295507B2 (ja) * 2007-02-26 2013-09-18 株式会社ジャパンディスプレイウェスト 半導体装置、表示装置および電子機器
JP2008233399A (ja) * 2007-03-19 2008-10-02 Sony Corp 画素回路および表示装置、並びに表示装置の製造方法
JP2008235477A (ja) 2007-03-19 2008-10-02 Oki Electric Ind Co Ltd フォトダイオードおよびそれを用いたフォトｉｃ
JP4413940B2 (ja) 2007-03-22 2010-02-10 株式会社東芝 固体撮像素子、単板カラー固体撮像素子及び電子機器
JP4324685B2 (ja) * 2007-03-29 2009-09-02 Ｏｋｉセミコンダクタ株式会社 紫外線受光素子およびその製造方法、並びに紫外線量測定装置
JP4530179B2 (ja) * 2008-01-22 2010-08-25 Ｏｋｉセミコンダクタ株式会社 フォトダイオードおよびそれを備えた紫外線センサ、並びにフォトダイオードの製造方法
JP4530180B2 (ja) * 2008-01-22 2010-08-25 Ｏｋｉセミコンダクタ株式会社 紫外線センサおよびその製造方法
JP4924617B2 (ja) * 2009-01-05 2012-04-25 ソニー株式会社 固体撮像素子、カメラ
CN111668328B (zh) * 2020-06-22 2022-03-15 三明学院 一种新型侧向pn结光电探测器
CN111785807B (zh) * 2020-08-11 2022-10-18 今上半导体(信阳)有限公司 一种pin光电器件及其制造方法
WO2022219710A1 (ja) * 2021-04-13 2022-10-20 日本電信電話株式会社 受光素子およびその製造方法
WO2023132052A1 (ja) * 2022-01-07 2023-07-13 ソニーセミコンダクタソリューションズ株式会社 光検出素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021103300A1 (zh) * 2019-11-29 2021-06-03 武汉华星光电技术有限公司 光电二极管及其制备方法

Also Published As

Publication number Publication date
JP2002314117A (ja) 2002-10-25

Similar Documents

Publication Publication Date Title
JP3912024B2 (ja) Ｐｉｎ構造のラテラル型半導体受光素子
TWI476906B (zh) Photodiode and photodiode array
EP3399558B1 (en) Semiconductor light-detecting element
JPS63503266A (ja) グレーデッドギャップ反転層フオトダイオードアレイ
CN103515396A (zh) 光电二极管阵列
JP4522531B2 (ja) 半導体エネルギー検出素子
US20130001729A1 (en) High Fill-Factor Laser-Treated Semiconductor Device on Bulk Material with Single Side Contact Scheme
JP2002314117A5 (enExample)
JP2002314116A (ja) Ｐｉｎ構造のラテラル型半導体受光素子
JP2004039751A (ja) 光起電力素子
US6798001B2 (en) Semiconductor device having photo diode with sensitivity to light of different wavelengths
JP2006060103A (ja) 半導体受光装置および紫外線センサー機器
JP4571267B2 (ja) 放射線検出器
KR100459894B1 (ko) 실리콘 수광소자
JP2004071763A (ja) 光起電力素子
JP2773930B2 (ja) 光検知装置
JP2004071828A (ja) 太陽電池
JPH01216581A (ja) 半導体装置
JPS5938748B2 (ja) 半導体光検出装置
JP2000252512A (ja) Ｐｉｎフォトダイオード
JP2000252512A5 (enExample)
KR100676733B1 (ko) 엔아이피 구조를 갖는 자외선검지기
RU221645U1 (ru) Полупроводниковый фотодиод для инфракрасного излучения
JPS61220480A (ja) 半導体受光装置
JPH04241458A (ja) 半導体光検出装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040318

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040318

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061219

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070109

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070122

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110209

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110209

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120209

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130209

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130209

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees