JP3859437B2 - 荷電ビーム露光装置 - Google Patents

荷電ビーム露光装置 Download PDF

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Publication number
JP3859437B2
JP3859437B2 JP2000237163A JP2000237163A JP3859437B2 JP 3859437 B2 JP3859437 B2 JP 3859437B2 JP 2000237163 A JP2000237163 A JP 2000237163A JP 2000237163 A JP2000237163 A JP 2000237163A JP 3859437 B2 JP3859437 B2 JP 3859437B2
Authority
JP
Japan
Prior art keywords
charged beam
electric field
charged
multipole lens
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000237163A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002050567A (ja
JP2002050567A5 (https=
Inventor
野 修 長
崎 裕一郎 山
本 進 橋
好 元 介 三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000237163A priority Critical patent/JP3859437B2/ja
Priority to US09/920,633 priority patent/US6815698B2/en
Priority to KR10-2001-0046900A priority patent/KR100434241B1/ko
Priority to TW090119069A priority patent/TW511171B/zh
Publication of JP2002050567A publication Critical patent/JP2002050567A/ja
Publication of JP2002050567A5 publication Critical patent/JP2002050567A5/ja
Application granted granted Critical
Publication of JP3859437B2 publication Critical patent/JP3859437B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/103—Lenses characterised by lens type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1538—Space charge (Boersch) effect compensation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2000237163A 2000-08-04 2000-08-04 荷電ビーム露光装置 Expired - Fee Related JP3859437B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000237163A JP3859437B2 (ja) 2000-08-04 2000-08-04 荷電ビーム露光装置
US09/920,633 US6815698B2 (en) 2000-08-04 2001-08-03 Charged particle beam exposure system
KR10-2001-0046900A KR100434241B1 (ko) 2000-08-04 2001-08-03 하전 빔 노광 장치
TW090119069A TW511171B (en) 2000-08-04 2001-08-03 Charged particle beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000237163A JP3859437B2 (ja) 2000-08-04 2000-08-04 荷電ビーム露光装置

Publications (3)

Publication Number Publication Date
JP2002050567A JP2002050567A (ja) 2002-02-15
JP2002050567A5 JP2002050567A5 (https=) 2005-04-21
JP3859437B2 true JP3859437B2 (ja) 2006-12-20

Family

ID=18729072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000237163A Expired - Fee Related JP3859437B2 (ja) 2000-08-04 2000-08-04 荷電ビーム露光装置

Country Status (4)

Country Link
US (1) US6815698B2 (https=)
JP (1) JP3859437B2 (https=)
KR (1) KR100434241B1 (https=)
TW (1) TW511171B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3577026B2 (ja) * 2001-11-02 2004-10-13 株式会社東芝 電子ビーム描画装置、電子ビーム描画装置の調整方法及び電子ビーム描画方法
US6940080B2 (en) 2002-03-28 2005-09-06 Kabushiki Kaisha Toshiba Charged particle beam lithography system, lithography method using charged particle beam, method of controlling charged particle beam, and method of manufacturing semiconductor device
JP3968338B2 (ja) * 2003-10-08 2007-08-29 株式会社東芝 荷電ビーム露光装置
DE102004037781A1 (de) * 2004-08-03 2006-02-23 Carl Zeiss Nts Gmbh Elektronenstrahlgerät
JP2006128564A (ja) * 2004-11-01 2006-05-18 Toshiba Corp 荷電ビーム露光装置および荷電ビーム制御方法
TWI323004B (en) 2005-12-15 2010-04-01 Nuflare Technology Inc Charged particle beam writing method and apparatus
JP4822848B2 (ja) * 2006-01-11 2011-11-24 日本電子株式会社 荷電粒子ビーム装置
EP1883094B1 (en) * 2006-07-24 2012-05-02 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting specimen
JP5020746B2 (ja) * 2007-08-29 2012-09-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法
US8536538B2 (en) * 2011-02-16 2013-09-17 Kla-Tencor Corporation Multiple-pole electrostatic deflector for improving throughput of focused electron beam instruments
GB2488429B (en) * 2011-02-28 2016-09-28 Agilent Technologies Inc Ion slicer with acceleration and deceleration optics
US9070534B2 (en) * 2012-05-04 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Ion beam dimension control for ion implantation process and apparatus, and advanced process control
US9165744B2 (en) * 2012-10-24 2015-10-20 Varian Semiconductor Equipment Associates, Inc. Apparatus for treating ion beam
JP6267445B2 (ja) * 2013-06-10 2018-01-24 株式会社荏原製作所 検査装置
JP6261228B2 (ja) * 2013-07-31 2018-01-17 株式会社日立ハイテクノロジーズ 集束イオンビーム装置、集束イオン／電子ビーム加工観察装置、及び試料加工方法
JP6253375B2 (ja) * 2013-12-02 2017-12-27 住友重機械イオンテクノロジー株式会社 イオン注入装置
CN109298001B (zh) * 2017-07-25 2021-06-01 东方晶源微电子科技（北京）有限公司 电子束成像模块、电子束检测设备及其图像采集方法
CN114496715B (zh) * 2022-01-14 2024-07-19 天津大学 一种基于静电储存环的深能级光电子能谱研究装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075488A (en) 1974-09-06 1978-02-21 Agency Of Industrial Science & Technology Pattern forming apparatus using quadrupole lenses
US4945246A (en) * 1989-03-24 1990-07-31 International Business Machines Corporation Tri-deflection electron beam system
JPH06105598B2 (ja) 1992-02-18 1994-12-21 工業技術院長 荷電ビーム用レンズ
JPH07262953A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 荷電粒子ビーム露光装置及び露光方法
JPH09320960A (ja) * 1996-03-25 1997-12-12 Nikon Corp 荷電粒子線転写装置
JP4234242B2 (ja) 1997-12-19 2009-03-04 株式会社東芝 電子ビーム描画装置
JP2000251827A (ja) * 1999-03-03 2000-09-14 Nikon Corp 照明光学系
US6525328B1 (en) * 1999-07-23 2003-02-25 Kabushiki Kaisha Toshiba Electron beam lithography system and pattern writing method
JP3859404B2 (ja) * 1999-09-27 2006-12-20 株式会社東芝 荷電ビーム描画装置およびパターン描画方法並びに記録媒体

Also Published As

Publication number Publication date
US6815698B2 (en) 2004-11-09
JP2002050567A (ja) 2002-02-15
US20020033458A1 (en) 2002-03-21
KR100434241B1 (ko) 2004-06-04
KR20020011913A (ko) 2002-02-09
TW511171B (en) 2002-11-21

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