KR100434241B1 - 하전 빔 노광 장치 - Google Patents

하전 빔 노광 장치 Download PDF

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Publication number
KR100434241B1
KR100434241B1 KR10-2001-0046900A KR20010046900A KR100434241B1 KR 100434241 B1 KR100434241 B1 KR 100434241B1 KR 20010046900 A KR20010046900 A KR 20010046900A KR 100434241 B1 KR100434241 B1 KR 100434241B1
Authority
KR
South Korea
Prior art keywords
charged beam
lens
electric field
charged
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0046900A
Other languages
English (en)
Korean (ko)
Other versions
KR20020011913A (ko
Inventor
나가노오사무
야마자끼유우이찌로
하시모또스스무
미요시모또스께
Original Assignee
가부시끼가이샤 도시바
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Filing date
Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20020011913A publication Critical patent/KR20020011913A/ko
Application granted granted Critical
Publication of KR100434241B1 publication Critical patent/KR100434241B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/103—Lenses characterised by lens type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1538—Space charge (Boersch) effect compensation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR10-2001-0046900A 2000-08-04 2001-08-03 하전 빔 노광 장치 Expired - Fee Related KR100434241B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000237163A JP3859437B2 (ja) 2000-08-04 2000-08-04 荷電ビーム露光装置
JPJP-P-2000-00237163 2000-08-04

Publications (2)

Publication Number Publication Date
KR20020011913A KR20020011913A (ko) 2002-02-09
KR100434241B1 true KR100434241B1 (ko) 2004-06-04

Family

ID=18729072

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0046900A Expired - Fee Related KR100434241B1 (ko) 2000-08-04 2001-08-03 하전 빔 노광 장치

Country Status (4)

Country Link
US (1) US6815698B2 (https=)
JP (1) JP3859437B2 (https=)
KR (1) KR100434241B1 (https=)
TW (1) TW511171B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100843916B1 (ko) 2005-12-15 2008-07-03 가부시키가이샤 뉴플레어 테크놀로지 하전 입자빔 묘화 방법 및 하전 입자빔 묘화 장치

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3577026B2 (ja) * 2001-11-02 2004-10-13 株式会社東芝 電子ビーム描画装置、電子ビーム描画装置の調整方法及び電子ビーム描画方法
US6940080B2 (en) 2002-03-28 2005-09-06 Kabushiki Kaisha Toshiba Charged particle beam lithography system, lithography method using charged particle beam, method of controlling charged particle beam, and method of manufacturing semiconductor device
JP3968338B2 (ja) * 2003-10-08 2007-08-29 株式会社東芝 荷電ビーム露光装置
DE102004037781A1 (de) * 2004-08-03 2006-02-23 Carl Zeiss Nts Gmbh Elektronenstrahlgerät
JP2006128564A (ja) * 2004-11-01 2006-05-18 Toshiba Corp 荷電ビーム露光装置および荷電ビーム制御方法
JP4822848B2 (ja) * 2006-01-11 2011-11-24 日本電子株式会社 荷電粒子ビーム装置
EP1883094B1 (en) * 2006-07-24 2012-05-02 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting specimen
JP5020746B2 (ja) * 2007-08-29 2012-09-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法
US8536538B2 (en) * 2011-02-16 2013-09-17 Kla-Tencor Corporation Multiple-pole electrostatic deflector for improving throughput of focused electron beam instruments
GB2488429B (en) * 2011-02-28 2016-09-28 Agilent Technologies Inc Ion slicer with acceleration and deceleration optics
US9070534B2 (en) * 2012-05-04 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Ion beam dimension control for ion implantation process and apparatus, and advanced process control
US9165744B2 (en) * 2012-10-24 2015-10-20 Varian Semiconductor Equipment Associates, Inc. Apparatus for treating ion beam
JP6267445B2 (ja) * 2013-06-10 2018-01-24 株式会社荏原製作所 検査装置
JP6261228B2 (ja) * 2013-07-31 2018-01-17 株式会社日立ハイテクノロジーズ 集束イオンビーム装置、集束イオン／電子ビーム加工観察装置、及び試料加工方法
JP6253375B2 (ja) * 2013-12-02 2017-12-27 住友重機械イオンテクノロジー株式会社 イオン注入装置
CN109298001B (zh) * 2017-07-25 2021-06-01 东方晶源微电子科技（北京）有限公司 电子束成像模块、电子束检测设备及其图像采集方法
CN114496715B (zh) * 2022-01-14 2024-07-19 天津大学 一种基于静电储存环的深能级光电子能谱研究装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07262953A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 荷電粒子ビーム露光装置及び露光方法
JPH09320960A (ja) * 1996-03-25 1997-12-12 Nikon Corp 荷電粒子線転写装置
JP2000251827A (ja) * 1999-03-03 2000-09-14 Nikon Corp 照明光学系
JP2001093825A (ja) * 1999-09-27 2001-04-06 Toshiba Corp 荷電ビーム描画装置およびパターン描画方法並びに記録媒体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075488A (en) 1974-09-06 1978-02-21 Agency Of Industrial Science & Technology Pattern forming apparatus using quadrupole lenses
US4945246A (en) * 1989-03-24 1990-07-31 International Business Machines Corporation Tri-deflection electron beam system
JPH06105598B2 (ja) 1992-02-18 1994-12-21 工業技術院長 荷電ビーム用レンズ
JP4234242B2 (ja) 1997-12-19 2009-03-04 株式会社東芝 電子ビーム描画装置
US6525328B1 (en) * 1999-07-23 2003-02-25 Kabushiki Kaisha Toshiba Electron beam lithography system and pattern writing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07262953A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 荷電粒子ビーム露光装置及び露光方法
JPH09320960A (ja) * 1996-03-25 1997-12-12 Nikon Corp 荷電粒子線転写装置
JP2000251827A (ja) * 1999-03-03 2000-09-14 Nikon Corp 照明光学系
JP2001093825A (ja) * 1999-09-27 2001-04-06 Toshiba Corp 荷電ビーム描画装置およびパターン描画方法並びに記録媒体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100843916B1 (ko) 2005-12-15 2008-07-03 가부시키가이샤 뉴플레어 테크놀로지 하전 입자빔 묘화 방법 및 하전 입자빔 묘화 장치

Also Published As

Publication number Publication date
JP3859437B2 (ja) 2006-12-20
US6815698B2 (en) 2004-11-09
JP2002050567A (ja) 2002-02-15
US20020033458A1 (en) 2002-03-21
KR20020011913A (ko) 2002-02-09
TW511171B (en) 2002-11-21

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