JP2002050567A5 - - Google Patents

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Publication number
JP2002050567A5
JP2002050567A5 JP2000237163A JP2000237163A JP2002050567A5 JP 2002050567 A5 JP2002050567 A5 JP 2002050567A5 JP 2000237163 A JP2000237163 A JP 2000237163A JP 2000237163 A JP2000237163 A JP 2000237163A JP 2002050567 A5 JP2002050567 A5 JP 2002050567A5
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JP
Japan
Prior art keywords
charged beam
electric field
multipole lens
charged
inner diameter
Prior art date
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Granted
Application number
JP2000237163A
Other languages
English (en)
Japanese (ja)
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JP3859437B2 (ja
JP2002050567A (ja
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Publication date
Application filed filed Critical
Priority to JP2000237163A priority Critical patent/JP3859437B2/ja
Priority claimed from JP2000237163A external-priority patent/JP3859437B2/ja
Priority to US09/920,633 priority patent/US6815698B2/en
Priority to KR10-2001-0046900A priority patent/KR100434241B1/ko
Priority to TW090119069A priority patent/TW511171B/zh
Publication of JP2002050567A publication Critical patent/JP2002050567A/ja
Publication of JP2002050567A5 publication Critical patent/JP2002050567A5/ja
Application granted granted Critical
Publication of JP3859437B2 publication Critical patent/JP3859437B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000237163A 2000-08-04 2000-08-04 荷電ビーム露光装置 Expired - Fee Related JP3859437B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000237163A JP3859437B2 (ja) 2000-08-04 2000-08-04 荷電ビーム露光装置
US09/920,633 US6815698B2 (en) 2000-08-04 2001-08-03 Charged particle beam exposure system
KR10-2001-0046900A KR100434241B1 (ko) 2000-08-04 2001-08-03 하전 빔 노광 장치
TW090119069A TW511171B (en) 2000-08-04 2001-08-03 Charged particle beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000237163A JP3859437B2 (ja) 2000-08-04 2000-08-04 荷電ビーム露光装置

Publications (3)

Publication Number Publication Date
JP2002050567A JP2002050567A (ja) 2002-02-15
JP2002050567A5 true JP2002050567A5 (https=) 2005-04-21
JP3859437B2 JP3859437B2 (ja) 2006-12-20

Family

ID=18729072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000237163A Expired - Fee Related JP3859437B2 (ja) 2000-08-04 2000-08-04 荷電ビーム露光装置

Country Status (4)

Country Link
US (1) US6815698B2 (https=)
JP (1) JP3859437B2 (https=)
KR (1) KR100434241B1 (https=)
TW (1) TW511171B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3577026B2 (ja) * 2001-11-02 2004-10-13 株式会社東芝 電子ビーム描画装置、電子ビーム描画装置の調整方法及び電子ビーム描画方法
US6940080B2 (en) 2002-03-28 2005-09-06 Kabushiki Kaisha Toshiba Charged particle beam lithography system, lithography method using charged particle beam, method of controlling charged particle beam, and method of manufacturing semiconductor device
JP3968338B2 (ja) * 2003-10-08 2007-08-29 株式会社東芝 荷電ビーム露光装置
DE102004037781A1 (de) * 2004-08-03 2006-02-23 Carl Zeiss Nts Gmbh Elektronenstrahlgerät
JP2006128564A (ja) * 2004-11-01 2006-05-18 Toshiba Corp 荷電ビーム露光装置および荷電ビーム制御方法
TWI323004B (en) 2005-12-15 2010-04-01 Nuflare Technology Inc Charged particle beam writing method and apparatus
JP4822848B2 (ja) * 2006-01-11 2011-11-24 日本電子株式会社 荷電粒子ビーム装置
EP1883094B1 (en) * 2006-07-24 2012-05-02 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting specimen
JP5020746B2 (ja) * 2007-08-29 2012-09-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法
US8536538B2 (en) * 2011-02-16 2013-09-17 Kla-Tencor Corporation Multiple-pole electrostatic deflector for improving throughput of focused electron beam instruments
GB2488429B (en) * 2011-02-28 2016-09-28 Agilent Technologies Inc Ion slicer with acceleration and deceleration optics
US9070534B2 (en) * 2012-05-04 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Ion beam dimension control for ion implantation process and apparatus, and advanced process control
US9165744B2 (en) * 2012-10-24 2015-10-20 Varian Semiconductor Equipment Associates, Inc. Apparatus for treating ion beam
JP6267445B2 (ja) * 2013-06-10 2018-01-24 株式会社荏原製作所 検査装置
JP6261228B2 (ja) * 2013-07-31 2018-01-17 株式会社日立ハイテクノロジーズ 集束イオンビーム装置、集束イオン／電子ビーム加工観察装置、及び試料加工方法
JP6253375B2 (ja) * 2013-12-02 2017-12-27 住友重機械イオンテクノロジー株式会社 イオン注入装置
CN109298001B (zh) * 2017-07-25 2021-06-01 东方晶源微电子科技（北京）有限公司 电子束成像模块、电子束检测设备及其图像采集方法
CN114496715B (zh) * 2022-01-14 2024-07-19 天津大学 一种基于静电储存环的深能级光电子能谱研究装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075488A (en) 1974-09-06 1978-02-21 Agency Of Industrial Science & Technology Pattern forming apparatus using quadrupole lenses
US4945246A (en) * 1989-03-24 1990-07-31 International Business Machines Corporation Tri-deflection electron beam system
JPH06105598B2 (ja) 1992-02-18 1994-12-21 工業技術院長 荷電ビーム用レンズ
JPH07262953A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 荷電粒子ビーム露光装置及び露光方法
JPH09320960A (ja) * 1996-03-25 1997-12-12 Nikon Corp 荷電粒子線転写装置
JP4234242B2 (ja) 1997-12-19 2009-03-04 株式会社東芝 電子ビーム描画装置
JP2000251827A (ja) * 1999-03-03 2000-09-14 Nikon Corp 照明光学系
US6525328B1 (en) * 1999-07-23 2003-02-25 Kabushiki Kaisha Toshiba Electron beam lithography system and pattern writing method
JP3859404B2 (ja) * 1999-09-27 2006-12-20 株式会社東芝 荷電ビーム描画装置およびパターン描画方法並びに記録媒体

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