JP3831726B2 - Non-contact type IC card manufacturing method - Google Patents

Non-contact type IC card manufacturing method Download PDF

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JP3831726B2
JP3831726B2 JP2003430923A JP2003430923A JP3831726B2 JP 3831726 B2 JP3831726 B2 JP 3831726B2 JP 2003430923 A JP2003430923 A JP 2003430923A JP 2003430923 A JP2003430923 A JP 2003430923A JP 3831726 B2 JP3831726 B2 JP 3831726B2
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thin film
planar coil
insulating resin
resin thin
film body
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JP2004133952A (en
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雅俊 赤川
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Shinko Electric Industries Co Ltd
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本発明は、平面コイルと、半導体素子とを具備し、平面コイルの端子部と前記半導体素子の電極端子とが電気的に接続された非接触型ICカードを製造する非接触型ICカードの製造方法に関する。   The present invention provides a non-contact type IC card that includes a flat coil and a semiconductor element, and manufactures a non-contact type IC card in which a terminal portion of the flat coil and an electrode terminal of the semiconductor element are electrically connected. Regarding the method.

従来の非接触型ICカード50の構成を図6を用いて説明する。
平面コイル52は、樹脂フィルム等の絶縁樹脂薄膜体54の一方の面に形成された金属箔(例えば銅箔)にエッチング等を施してロ字形の渦巻き状に形成したり、また絶縁樹脂薄膜体54の一方の面に導電性ペーストを印刷し乾燥することで渦巻き状に形成したりすることによって製造される。平面コイル52の両端部は、端子部52aとなる。
半導体素子56は、その一方の面に、平面コイル52の各端子部52aと接続される電極端子58が2つ突出して形成されている。
The configuration of a conventional non-contact type IC card 50 will be described with reference to FIG.
The planar coil 52 is formed into a rectangular spiral shape by etching or the like on a metal foil (for example, copper foil) formed on one surface of an insulating resin thin film body 54 such as a resin film. It is manufactured by printing a conductive paste on one surface of 54 and forming it in a spiral shape by drying. Both end portions of the planar coil 52 become terminal portions 52a.
The semiconductor element 56 has two electrode terminals 58 protruding from one surface thereof, which are connected to the terminal portions 52a of the planar coil 52.

そして半導体素子56は、図7に示すように、2つの電極端子58が平面コイル52の一部を跨ぎ、各電極端子58が平面コイル52の各端子部52a上に位置するように絶縁樹脂薄膜体54の一方の面に位置決めされて取り付けられる。
具体的には、半導体素子56は、図8に示すように、異方性導電膜60を介して絶縁樹脂薄膜体54に圧着されて固定される。これにより、突出した電極端子58と電極端子58に対向する端子部52aとの間に導電パスが形成されて半導体素子56の電極端子58と平面コイル52の端子部52aとが電気的に接続される。
As shown in FIG. 7, the semiconductor element 56 has an insulating resin thin film so that the two electrode terminals 58 straddle part of the planar coil 52 and each electrode terminal 58 is positioned on each terminal portion 52 a of the planar coil 52. It is positioned and attached to one surface of the body 54.
Specifically, as shown in FIG. 8, the semiconductor element 56 is fixed by being crimped to the insulating resin thin film 54 via the anisotropic conductive film 60. Thus, a conductive path is formed between the protruding electrode terminal 58 and the terminal portion 52a facing the electrode terminal 58, and the electrode terminal 58 of the semiconductor element 56 and the terminal portion 52a of the planar coil 52 are electrically connected. The

そして、平面コイル52と半導体素子56が配置された絶縁樹脂薄膜体54に、その両側から、片面に接着層61が形成された樹脂製のオーバーシート62を装着し、オーバーシート62を加熱・加圧して一体的に形成することによって、図6に示す構造の非接触型ICカード50となる。   Then, a resin oversheet 62 having an adhesive layer 61 formed on one side is attached to the insulating resin thin film body 54 on which the planar coil 52 and the semiconductor element 56 are disposed, and the oversheet 62 is heated and heated. The contactless IC card 50 having the structure shown in FIG.

また、近年では、半導体素子56の小型化が進み、これに伴なって半導体素子56に形成される一対の電極端子58間の間隔が狭くなってきており、この場合には前述のように、半導体素子56を、その電極端子58が平面コイル52の内側と外側に位置するように平面コイル52上に跨がせて配置することができない。
このため、図9や図10に示すように、平面コイル52の一方の端子部52a(一例として内側の端子部52a)を絶縁樹脂薄膜体54の他方の面側を介して平面コイル52の外側に引き出し、他方の端子部52aに近接して配置する構造が提案されている。
これにより、電極端子58同士の間隔が狭い半導体素子56であっても、半導体素子56を、絶縁樹脂薄膜体54の一方の面の、平面コイル52と重ならない位置に配置し、平面コイル52を跨がせることなく、前述の例と同様の取り付け構造を用いてその電極端子58を平面コイル52の端子部52aと電気的に接続することができる。
Further, in recent years, the semiconductor element 56 has been miniaturized, and accordingly, the distance between the pair of electrode terminals 58 formed in the semiconductor element 56 has been narrowed. In this case, as described above, The semiconductor element 56 cannot be disposed across the planar coil 52 so that the electrode terminals 58 are located inside and outside the planar coil 52.
For this reason, as shown in FIGS. 9 and 10, one terminal portion 52 a (for example, the inner terminal portion 52 a) of the planar coil 52 is placed outside the planar coil 52 via the other surface side of the insulating resin thin film body 54. And a structure in which the other terminal portion 52a is arranged close to the other terminal portion 52a has been proposed.
Thereby, even if it is the semiconductor element 56 where the space | interval of the electrode terminals 58 is narrow, the semiconductor element 56 is arrange | positioned in the position which does not overlap with the planar coil 52 of one surface of the insulating resin thin film body 54, and the planar coil 52 is arranged. The electrode terminal 58 can be electrically connected to the terminal portion 52a of the planar coil 52 by using the same mounting structure as in the above example without straddling.

しかしながら、この図9や図10に示す構造では、絶縁樹脂薄膜体54の両面に金属箔を形成し、エッチングして、平面コイル52以外に引き出し用配線パターン64を形成する必要があり、また一方の面に形成した平面コイル52と他方の面に形成した引き出し用配線パターン64とを電気的に接続するスルーホール66を形成する必要もあることから、製造工程が増え、また両面に金属箔が貼り付けられた絶縁樹脂薄膜体を使用する必要があることから、材料費も高くなって、製品コストがアップしてしまうという課題がある。   However, in the structure shown in FIGS. 9 and 10, it is necessary to form a metal foil on both surfaces of the insulating resin thin film 54 and etch it to form a lead wiring pattern 64 in addition to the planar coil 52. Since it is necessary to form a through hole 66 that electrically connects the planar coil 52 formed on the surface of the lead coil 52 and the lead-out wiring pattern 64 formed on the other surface, the number of manufacturing processes is increased, and metal foil is provided on both surfaces. Since it is necessary to use the pasted insulating resin thin film body, there is a problem that the material cost is increased and the product cost is increased.

従って、本発明は上記課題を解決すべくなされ、その目的とするところは、絶縁樹脂薄膜体の平面コイルの形成面の背面側に配線パターンを形成しなくても、小型で電極端子間の隙間が狭い半導体素子を取り付けることができる非接触型ICカードの製造方法を提供することにある。   Accordingly, the present invention has been made to solve the above-mentioned problems, and the object of the present invention is to achieve a small and gap between electrode terminals without forming a wiring pattern on the back side of the plane coil forming surface of the insulating resin thin film body. It is an object of the present invention to provide a method for manufacturing a non-contact type IC card to which a semiconductor element having a narrow width can be attached.

本発明にかかる非接触型ICカードの製造方法によれば、平面コイルと半導体素子とが絶縁樹脂薄膜体の一方の面に配置され、前記平面コイルの端子部と前記半導体素子の電極端子とが電気的に接続された非接触型ICカードを製造する非接触型ICカードの製造方法において、絶縁樹脂薄膜体の一方の面に平面コイルを形成する平面コイル形成工程と、平面コイルの両端子部を絶縁樹脂薄膜体の他方の面側に露出させる第1貫通穴および第2貫通穴、ならびに絶縁樹脂薄膜体の一方の面に配置される半導体素子の両電極端子を絶縁樹脂薄膜体の他方の面側に露出させる第3貫通穴および第4貫通穴を、絶縁樹脂薄膜体にあける穴あけ工程と、両電極端子にバンプが形成された半導体素子を、該各バンプが第3貫通穴内および第4貫通穴内に位置するように絶縁樹脂薄膜体の一方の面に貼り付けて固定する半導体素子貼り付け工程と、平面コイルの端子部と半導体素子の電極端子との間を電気的に接続する配線パターンを形成するように、絶縁樹脂薄膜体の他方の面に導電性ペーストを塗布するとともに、第1貫通穴内、第2貫通穴内、第3貫通穴内および第4貫通穴内に導電性ペーストを充填する工程と、導電性ペーストを乾燥させるペースト乾燥工程と、平面コイルと半導体素子とが配置された絶縁樹脂薄膜体に、その両側から樹脂製のオーバーシートを装着するカード化工程とを含むことを特徴としている。 According to the non-contact type IC card manufacturing method of the present invention, the planar coil and the semiconductor element are arranged on one surface of the insulating resin thin film body, and the terminal portion of the planar coil and the electrode terminal of the semiconductor element are In a non-contact type IC card manufacturing method for manufacturing an electrically connected non-contact type IC card, a flat coil forming step of forming a flat coil on one surface of an insulating resin thin film body, and both terminal portions of the flat coil Are exposed to the other surface of the insulating resin thin film body, and both electrode terminals of the semiconductor element disposed on one surface of the insulating resin thin film body are connected to the other side of the insulating resin thin film body. The third through hole and the fourth through hole exposed on the surface side are formed in the insulating resin thin film body, and the semiconductor element in which bumps are formed on both electrode terminals are formed in the third through hole and in the fourth. In the through hole A semiconductor element affixing step for adhering and fixing to one surface of the insulating resin thin film body, and a wiring pattern for electrically connecting the terminal portion of the planar coil and the electrode terminal of the semiconductor element. And applying the conductive paste to the other surface of the insulating resin thin film body, filling the conductive paste in the first through hole, the second through hole, the third through hole, and the fourth through hole; A paste drying step of drying the conductive paste, and a card forming step of mounting a resin oversheet on both sides of the insulating resin thin film body on which the planar coil and the semiconductor element are arranged.

また、請求項2記載の非接触型ICカードの製造方法によれば、平面コイルが絶縁樹脂薄膜体の一方の面に配置され、半導体素子が絶縁樹脂薄膜体の他方の面に配置され、前記平面コイルの端子部と前記半導体素子の電極端子とが電気的に接続された非接触型ICカードを製造する非接触型ICカードの製造方法において、絶縁樹脂薄膜体の一方の面に平面コイルを形成する平面コイル形成工程と、絶縁樹脂薄膜体の他方の面に配置される半導体素子の両電極端子を絶縁樹脂薄膜体の一方の面側に露出させる第3貫通穴および第4貫通穴を、絶縁樹脂薄膜体にあける穴あけ工程と、両電極端子にバンプが形成された半導体素子を、該各バンプが第3貫通穴内および第4貫通穴内に位置するように絶縁樹脂薄膜体の他方の面に貼り付けて固定する半導体素子貼り付け工程と、平面コイルを横切る配線パターンを形成する部位には、平面コイルを覆うように絶縁体を配置する工程と、平面コイルの端子部と半導体素子の電極端子との間を電気的に接続する配線パターンを形成するように、且つ平面コイルを横切る部位では前記絶縁体の表面を経由して、絶縁樹脂薄膜体の一方の面に導電性ペーストを塗布するとともに、第3貫通穴内および第4貫通穴内に導電性ペーストを充填する工程と、導電性ペーストを乾燥させるペースト乾燥工程と、平面コイルと半導体素子とが配置された絶縁樹脂薄膜体に、その両側から樹脂製のオーバーシートを装着するカード化工程とを含むことを特徴としている。
具体的には、前記配線パターンが横切る前記平面コイルの表面が絶縁体で覆われ、該絶縁体上に配線パターンを形成する。
According to the method for manufacturing a non-contact type IC card according to claim 2, the planar coil is disposed on one surface of the insulating resin thin film body, the semiconductor element is disposed on the other surface of the insulating resin thin film body, In a non-contact type IC card manufacturing method for manufacturing a non-contact type IC card in which a terminal portion of a flat coil and an electrode terminal of the semiconductor element are electrically connected, a flat coil is provided on one surface of an insulating resin thin film body. A planar coil forming step to be formed, and a third through hole and a fourth through hole that expose both electrode terminals of the semiconductor element disposed on the other surface of the insulating resin thin film body on one surface side of the insulating resin thin film body, A hole forming step in the insulating resin thin film body and a semiconductor element having bumps formed on both electrode terminals are formed on the other surface of the insulating resin thin film body so that each bump is positioned in the third through hole and the fourth through hole. Paste and fix The step of attaching the semiconductor element, the step of disposing an insulator so as to cover the planar coil at the site where the wiring pattern is formed across the planar coil, and the electrical connection between the terminal portion of the planar coil and the electrode terminal of the semiconductor element The conductive paste is applied to one surface of the insulating resin thin film body through the surface of the insulator at a portion crossing the planar coil so as to form a wiring pattern to be connected to the plane coil, and in the third through hole And a step of filling a conductive paste in the fourth through hole, a paste drying step of drying the conductive paste, and an insulating resin thin film body in which the planar coil and the semiconductor element are disposed, and a resin oversheet from both sides thereof And a card forming process for mounting the card.
Specifically, the surface of the planar coil that the wiring pattern crosses is covered with an insulator, and the wiring pattern is formed on the insulator.

また、前記平面コイルは絶縁樹脂薄膜体の一方の面に貼り付けられた金属箔をエッチングして形成されていることを特徴としてもよい。
さらに、前記穴あけ工程を実行した後、前記第1貫通穴および第2貫通穴から露出する平面コイルの両端子部の表面に金めっき皮膜を形成する表面処理工程を実行することを特徴としてもよい。これにより、導電性ペーストの端子部への密着性が向上する。
Further, the planar coil may be formed by etching a metal foil attached to one surface of the insulating resin thin film body.
Furthermore, after performing the said drilling process, it is good also as performing the surface treatment process which forms a gold plating film on the surface of both the terminal parts of the planar coil exposed from the said 1st through-hole and a 2nd through-hole. . Thereby, the adhesiveness to the terminal part of an electrically conductive paste improves.

請求項2記載の非接触型ICカードの製造方法において、前記平面コイルは絶縁樹脂薄膜体の一方の面に貼り付けられた金属箔をエッチングして形成されていることを特徴としてもよい。
さらに、請求項5記載の非接触型ICカードの製造方法において、前記穴あけ工程を実行した後、平面コイルの両端子部の表面に金めっき皮膜を形成する表面処理工程を実行することを特徴としてもよい。これにより、導電性ペーストの端子部への密着性が向上する。
3. The method of manufacturing a non-contact type IC card according to claim 2, wherein the planar coil is formed by etching a metal foil attached to one surface of an insulating resin thin film body.
Furthermore, in the manufacturing method of the non-contact type IC card according to claim 5, a surface treatment step of forming a gold plating film on the surfaces of both terminal portions of the planar coil is performed after the punching step is performed. Also good. Thereby, the adhesiveness to the terminal part of an electrically conductive paste improves.

また、前記平面コイルは絶縁樹脂薄膜体の一方の面に導電性ペーストを印刷して形成されていることを特徴としてもよい The planar coil may be formed by printing a conductive paste on one surface of the insulating resin thin film .

本発明に係る非接触型ICカードの製造方法によれば、絶縁樹脂薄膜体の平面コイルの形成面の背面側に配線パターンを形成しなくても、小型で電極端子間の隙間が狭い半導体素子を取り付けることができる。このため、例えば両面に銅箔が貼り付けられた絶縁樹脂薄膜体を用いる必要が無くなり、製造コストが低減でき、製品コストを下げることが可能となる。   According to the method of manufacturing a non-contact type IC card according to the present invention, a small semiconductor element having a narrow gap between electrode terminals can be formed without forming a wiring pattern on the back side of the plane coil forming surface of the insulating resin thin film body. Can be attached. For this reason, for example, it is not necessary to use an insulating resin thin film body in which copper foils are attached to both surfaces, the manufacturing cost can be reduced, and the product cost can be reduced.

以下、本発明に係る非接触型ICカードの製造方法の好適な実施の形態を添付図面に基づいて詳細に説明する。なお、従来例と同じ構成については同じ符号を付し、詳細な説明は省略する。
(第1の実施の形態)
非接触型ICカード10の構造について説明する。なお、従来例と同じ構成については同じ符号を付し、詳細な説明は省略する。
まず、非接触型ICカード10の構成の内、従来例で説明した非接触型ICカード50と同じ構成についてその概要を図6を用いて説明する。
絶縁樹脂薄膜体54 の表面に平面コイル52が形成され、同じく絶縁樹脂薄膜体54の表面に半導体素子56が、その電極端子58と平面コイル52の端子部52aとが電気的に接続された状態で取り付けられ、半導体素子56と平面コイル52と絶縁樹脂薄膜体54とが、絶縁樹脂薄膜体54の両側から装着されたオーバーシート62によってカバーされて一体的に形成された構成である。
Preferred embodiments of a method for producing a non-contact IC card according to the present invention will be described below in detail with reference to the accompanying drawings. In addition, the same code | symbol is attached | subjected about the same structure as a prior art example, and detailed description is abbreviate | omitted.
(First embodiment)
The structure of the non-contact type IC card 10 will be described. In addition, the same code | symbol is attached | subjected about the same structure as a prior art example, and detailed description is abbreviate | omitted.
First, an outline of the same configuration as the non-contact type IC card 50 described in the conventional example among the configurations of the non-contact type IC card 10 will be described with reference to FIG.
The planar coil 52 is formed on the surface of the insulating resin thin film body 54, and the semiconductor element 56 is similarly electrically connected to the surface of the insulating resin thin film body 54 with the electrode terminals 58 and the terminal portions 52 a of the planar coil 52. The semiconductor element 56, the planar coil 52, and the insulating resin thin film body 54 are integrally formed by being covered with an oversheet 62 attached from both sides of the insulating resin thin film body 54.

次に、本発明に係る非接触型ICカード10の特徴部分であり、従来例とは異なる、平面コイル52と半導体素子56との電気的接続構造について説明する。
本実施の形態では、図1や図2に示すように、平面コイル52と半導体素子56とが、絶縁樹脂薄膜体54の同じ面に配置された場合である。
詳細には、平面コイル52は絶縁樹脂薄膜体54の一方の面(図1や図2の下面)に配置され、同様に半導体素子56も絶縁樹脂薄膜体54の一方の面に配置されている。
Next, an electrical connection structure between the planar coil 52 and the semiconductor element 56, which is a characteristic part of the non-contact type IC card 10 according to the present invention and is different from the conventional example, will be described.
In the present embodiment, as shown in FIGS. 1 and 2, the planar coil 52 and the semiconductor element 56 are disposed on the same surface of the insulating resin thin film body 54.
Specifically, the planar coil 52 is disposed on one surface (the lower surface in FIGS. 1 and 2) of the insulating resin thin film body 54, and similarly, the semiconductor element 56 is disposed on one surface of the insulating resin thin film body 54. .

そして、平面コイル52の端子部52aと半導体素子56の電極端子58との接続構造は、絶縁樹脂薄膜体54には、平面コイル52の端子部52aおよび半導体素子56の電極端子58を他方の面側に露出させる貫通穴(14aと14b、14cと14d)が形成され、絶縁樹脂薄膜体54の他方の面(図1や図2の上面)には、両端部が各貫通穴14a〜14dに充填されて平面コイル52の端子部52aと半導体素子56の電極端子58との間に延在する導電性ペーストを用いて形成した2本の接続用配線パターン12a、12bが形成されることによって、平面コイル52の各端子部52aと半導体素子56の各電極端子58とが電気的に接続された構造となっている。
これにより、従来のように絶縁樹脂薄膜体54の平面コイル52が形成された面の背面側に予め金属箔をエッチングすることによって引き出し用配線パターン64を形成しておく必要が無くなり、両面に銅箔を貼りつけた絶縁樹脂薄膜体54を使用しなくても良いために、製品コストの低減が図れる。
The connection structure between the terminal portion 52a of the planar coil 52 and the electrode terminal 58 of the semiconductor element 56 is such that the terminal portion 52a of the planar coil 52 and the electrode terminal 58 of the semiconductor element 56 are connected to the other surface of the insulating resin thin film body 54. Through-holes (14a and 14b, 14c and 14d) exposed to the side are formed, and both end portions are formed in the through-holes 14a to 14d on the other surface (the upper surface in FIGS. 1 and 2) of the insulating resin thin film body 54. By forming the two connection wiring patterns 12a and 12b formed by using a conductive paste that is filled and extends between the terminal portion 52a of the planar coil 52 and the electrode terminal 58 of the semiconductor element 56, Each terminal portion 52a of the planar coil 52 and each electrode terminal 58 of the semiconductor element 56 are electrically connected.
This eliminates the need to previously form the lead wiring pattern 64 by etching the metal foil in advance on the back side of the surface of the insulating resin thin film 54 on which the planar coil 52 is formed. Since it is not necessary to use the insulating resin thin film 54 to which the foil is attached, the product cost can be reduced.

また、貫通穴14c、14d内に充填された導電性ペーストとの電気的接続を良好にするため、半導体素子56の電極端子58の場合には例えば図2に示すように、電極端子58の表面に金バンプ16を突設させるようにしても良い。また、同じく平面コイル52の端子部52aの場合にも、貫通穴14a、14bから露出する端子部52aの表面に金めっきを施す等の表面処理を行い、金めっき被膜18を形成するようにしても良い。   In order to improve the electrical connection with the conductive paste filled in the through holes 14c and 14d, in the case of the electrode terminal 58 of the semiconductor element 56, for example, as shown in FIG. Alternatively, the gold bumps 16 may be projected. Similarly, in the case of the terminal portion 52a of the planar coil 52, a surface treatment such as gold plating is performed on the surface of the terminal portion 52a exposed from the through holes 14a and 14b so that the gold plating film 18 is formed. Also good.

続いて、非接触型ICカード10の製造方法について図5を用いて説明する。
最初に、半導体素子56側は、その電極端子58の表面に金バンプ16を形成する。また、片面(一方の面)に金属箔、例えば銅箔が貼り付けられた絶縁樹脂薄膜体(例えばPET基板)54を用意する。
次に、この絶縁樹脂薄膜体54の金属箔をエッチングして平面コイル52を形成する(平面コイル形成工程)。
Next, a method for manufacturing the non-contact type IC card 10 will be described with reference to FIG.
First, the gold bump 16 is formed on the surface of the electrode terminal 58 on the semiconductor element 56 side. In addition, an insulating resin thin film body (for example, a PET substrate) 54 in which a metal foil, for example, a copper foil is attached to one surface (one surface) is prepared.
Next, the planar foil 52 is formed by etching the metal foil of the insulating resin thin film 54 (planar coil forming step).

次に、絶縁樹脂薄膜体54にレーザー等を用いて貫通穴14a〜14eをあける(穴あけ工程)。貫通穴には、前述のように平面コイル52の端子部52aを、絶縁樹脂薄膜体54の他方の面側に露出させる第1貫通穴14aと第2貫通穴14b、さらに絶縁樹脂薄膜体54の一方の面に配置される半導体素子56の電極端子58を、同じく絶縁樹脂薄膜体54の他方の面側に露出させる第3貫通穴14cと第4貫通穴14dがある。なお、第5貫通穴14eは、絶縁樹脂薄膜体54の一方の面に配置される半導体素子56の領域内に設けられ、固定用樹脂を注入するために使用される。   Next, the through holes 14a to 14e are formed in the insulating resin thin film 54 using a laser or the like (drilling step). As described above, the first through hole 14 a and the second through hole 14 b that expose the terminal portion 52 a of the planar coil 52 on the other surface side of the insulating resin thin film body 54 and the insulating resin thin film body 54 are formed in the through holes. There are a third through hole 14 c and a fourth through hole 14 d that expose the electrode terminal 58 of the semiconductor element 56 disposed on one surface to the other surface side of the insulating resin thin film body 54. The fifth through hole 14e is provided in a region of the semiconductor element 56 disposed on one surface of the insulating resin thin film body 54, and is used for injecting a fixing resin.

次に、第1貫通穴14aと第2貫通穴14bから露出する平面コイル52の端子部52aの表面に金めっき被膜18を形成する(平面コイルの端子部の表面処理工程)。
これにより、導電性ペーストの端子部52aへの密着性が向上する。
次に、電極端子58にバンプ16が形成された半導体素子56を、バンプ16が第3貫通穴14cと第4貫通穴14d内に位置するように、絶縁樹脂薄膜体54の一方の面に貼り付けて固定する(半導体素子貼り付け工程)。貼り付け作業は、半導体素子56を絶縁樹脂薄膜体54に密着させた状態で、第5貫通穴14eから接着剤を流し込んで、半導体素子56を絶縁樹脂薄膜体54に接着する。
Next, the gold plating film 18 is formed on the surface of the terminal portion 52a of the planar coil 52 exposed from the first through hole 14a and the second through hole 14b (surface treatment step of the planar coil terminal portion).
Thereby, the adhesiveness to the terminal part 52a of an electrically conductive paste improves.
Next, the semiconductor element 56 having the bumps 16 formed on the electrode terminals 58 is attached to one surface of the insulating resin thin film body 54 so that the bumps 16 are located in the third through holes 14c and the fourth through holes 14d. Attach and fix (semiconductor element pasting step). In the pasting operation, the semiconductor element 56 is adhered to the insulating resin thin film body 54 by pouring an adhesive from the fifth through hole 14 e in a state where the semiconductor element 56 is in close contact with the insulating resin thin film body 54.

次に、絶縁樹脂薄膜体54の他方の面に、導電性ペースト(一例として、エポキシ系樹脂中に銀フィラーを含んだもの)を、第1貫通穴14aと第3貫通穴14cの間、第2貫通穴14bと第4貫通穴14dの間に、好ましくは最短距離で塗布する(導電ペースト印刷工程)。この際、各貫通穴14a〜14d内には導電性ペーストを充填し、電極端子58および端子部52aに導電性ペーストが良好に密着するようにする。これにより、第1貫通穴14aと第3貫通穴14cの間、第2貫通穴14bと第4貫通穴14dの間には、導電性ペーストが延在した状態となる。   Next, on the other surface of the insulating resin thin film 54, a conductive paste (for example, an epoxy resin containing a silver filler) is placed between the first through hole 14a and the third through hole 14c. The coating is preferably performed at the shortest distance between the second through hole 14b and the fourth through hole 14d (conductive paste printing step). At this time, the through holes 14a to 14d are filled with a conductive paste so that the conductive paste adheres well to the electrode terminal 58 and the terminal portion 52a. As a result, the conductive paste extends between the first through hole 14a and the third through hole 14c, and between the second through hole 14b and the fourth through hole 14d.

次に、導電性ペーストを乾燥し、配線パターン12(12aと12b)を形成する。これにより、平面コイル52の端子部52aと半導体素子56の電極端子58とが電気的に接続される(ペースト乾燥工程)。
次に、従来例と同様に、平面コイル52と半導体素子56が配置された絶縁樹脂薄膜体54に、その両側から、片面に接着層61が形成された樹脂製のオーバーシート62を接着層61が絶縁樹脂薄膜体54側になるように装着し、オーバーシート62を加熱・加圧して一体的に形成することによって、図6に示すような非接触型ICカード10とする(カード化工程)。
Next, the conductive paste is dried to form the wiring patterns 12 (12a and 12b). Thereby, the terminal part 52a of the planar coil 52 and the electrode terminal 58 of the semiconductor element 56 are electrically connected (paste drying process).
Next, as in the conventional example, a resin oversheet 62 having an adhesive layer 61 formed on one side is attached to the insulating resin thin film body 54 on which the planar coil 52 and the semiconductor element 56 are arranged from both sides. Is attached to the insulating resin thin film body 54 side, and the oversheet 62 is integrally formed by heating and pressing to form a non-contact type IC card 10 as shown in FIG. 6 (card forming process). .

(第2の実施の形態)
本実施の形態では、図3や図4に示すように、平面コイル52と半導体素子56とが、絶縁樹脂薄膜体54の異なる面に配置された場合である。
詳細には、平面コイル52は絶縁樹脂薄膜体54の一方の面(図3や図4の上面)に配置され、半導体素子56は絶縁樹脂薄膜体54の他方の面(図3や図4の下面)に配置されている。
(Second embodiment)
In the present embodiment, as shown in FIGS. 3 and 4, the planar coil 52 and the semiconductor element 56 are disposed on different surfaces of the insulating resin thin film body 54.
Specifically, the planar coil 52 is disposed on one surface of the insulating resin thin film body 54 (upper surface in FIGS. 3 and 4), and the semiconductor element 56 is disposed on the other surface of the insulating resin thin film body 54 (in FIGS. 3 and 4). (On the lower surface).

そして、平面コイル52の端子部52aと半導体素子56の電極端子58との接続構造は、絶縁樹脂薄膜体54には、半導体素子56の電極端子58を一方の面に露出させる第3貫通穴14cと第4貫通穴14dが形成され、絶縁樹脂薄膜体54の一方の面には、一端部が貫通穴14c、14dに充填され、他端部が平面コイル52の端子部52a上に重なって平面コイル52の端子部52aと半導体素子56の電極端子58との間に延在する導電性ペーストを用いて形成した配線パターン12(12a、12b)が2本形成されることによって、平面コイル52の端子部52aと半導体素子56の電極端子58とが電気的に接続された構造となっている。   The connection structure between the terminal portion 52a of the planar coil 52 and the electrode terminal 58 of the semiconductor element 56 is such that the insulating resin thin film body 54 has a third through hole 14c that exposes the electrode terminal 58 of the semiconductor element 56 on one surface. And the fourth through hole 14d, one end of the insulating resin thin film body 54 is filled in the through holes 14c and 14d, and the other end overlaps the terminal portion 52a of the planar coil 52 and is flat. Two wiring patterns 12 (12a, 12b) formed using a conductive paste extending between the terminal portion 52a of the coil 52 and the electrode terminal 58 of the semiconductor element 56 are formed. The terminal portion 52a and the electrode terminal 58 of the semiconductor element 56 are electrically connected.

また、本実施の形態では、絶縁樹脂薄膜体54の平面コイル52が形成された面と同じ面に、配線パターン12が形成されるため、一方の配線パターン12bは平面コイル52を横切ることになる。
従って、平面コイル52と平面コイル52を横切る配線パターン12bとが短絡しないように、相互間を電気的に絶縁させる必要がある。このため、図3や図4に示すように、この配線パターン12bと平面コイル52との間には絶縁ペーストや絶縁樹脂シート等で形成された絶縁体20を介在させ、絶縁体20上に配線パターン12bが形成される構成となっている。
In the present embodiment, since the wiring pattern 12 is formed on the same surface as the surface on which the planar coil 52 of the insulating resin thin film 54 is formed, one wiring pattern 12b crosses the planar coil 52. .
Therefore, it is necessary to electrically insulate the planar coil 52 and the wiring pattern 12b crossing the planar coil 52 from each other so as not to be short-circuited. Therefore, as shown in FIGS. 3 and 4, an insulator 20 formed of an insulating paste, an insulating resin sheet, or the like is interposed between the wiring pattern 12 b and the planar coil 52, and the wiring is formed on the insulator 20. The pattern 12b is formed.

これにより、本実施の形態の非接触型ICカードの場合でも、従来のように絶縁樹脂薄膜体54の平面コイル52が形成された面の背面側に予め金属箔をエッチングすることによって配線パターンを形成しておく必要が無くなり、両面に銅箔を貼りつけた絶縁樹脂薄膜体54を使用しなくても良い。このために、製品コストの低減が図れる。   As a result, even in the case of the non-contact type IC card of the present embodiment, the wiring pattern is formed by etching the metal foil in advance on the back side of the surface on which the planar coil 52 of the insulating resin thin film body 54 is formed as in the prior art. There is no need to form the insulating resin thin film body 54, and the insulating resin thin film body 54 with the copper foil attached to both sides may not be used. For this reason, the product cost can be reduced.

続いて、非接触型ICカード10の製造方法について説明する。なお、製造工程の基本的な流れは前述の第1の実施の形態と同じであるから、図5を用いて相違する工程についてのみ説明する。
平面コイル形成工程は第1の実施の形態と同じである。
穴あけ工程では、半導体素子56の電極端子58を露出させる第3貫通穴14cと第4貫通穴14d、そして半導体素子56を固定するための第5貫通穴14eのみを形成する。
平面コイルの端子部の表面処理工程では、平面コイル52の端子部52aの表面全体に金めっき被膜18を形成する。
半導体素子貼り付け工程では、電極端子58にバンプ16が形成された半導体素子56を、バンプ16が第3貫通穴14cと第4貫通穴14d内に位置するように、絶縁樹脂薄膜体54の他方の面に貼り付けて固定する。
Next, a method for manufacturing the non-contact type IC card 10 will be described. Since the basic flow of the manufacturing process is the same as that of the first embodiment described above, only the different process will be described with reference to FIG.
The planar coil forming process is the same as that in the first embodiment.
In the drilling process, only the third through hole 14c and the fourth through hole 14d that expose the electrode terminal 58 of the semiconductor element 56 and the fifth through hole 14e for fixing the semiconductor element 56 are formed.
In the surface treatment process of the terminal portion of the planar coil, the gold plating film 18 is formed on the entire surface of the terminal portion 52a of the planar coil 52.
In the semiconductor element pasting step, the semiconductor element 56 having the bumps 16 formed on the electrode terminals 58 is placed on the other side of the insulating resin thin film body 54 so that the bumps 16 are positioned in the third through holes 14c and the fourth through holes 14d. Affix to the surface of and fix.

そして、半導体素子貼り付け工程の後、導電ペースト印刷工程の前に、配線パターン12bが横切る平面コイル52の部位に、平面コイル52を覆うように、絶縁体20を配置する。一例として、絶縁ペーストを塗布し、乾燥させて絶縁体20を形成する(絶縁ペースト印刷工程)。なお、絶縁シートを平面コイル52に接着して絶縁体20とすることも可能である。
その他の、導電ペースト印刷工程からカード化の工程は第1の実施の形態と同じである。なお、導電ペースト印刷工程では、配線パターン12bとなる導電性ペーストは、絶縁体20の表面を経由して第4貫通穴14dと平面コイル52の端子部52aとの間に延在する構成となる。
Then, after the semiconductor element pasting step and before the conductive paste printing step, the insulator 20 is disposed so as to cover the planar coil 52 at the portion of the planar coil 52 that the wiring pattern 12b crosses. As an example, an insulating paste is applied and dried to form the insulator 20 (insulating paste printing step). It is also possible to bond the insulating sheet to the planar coil 52 to form the insulator 20.
The other processes from the conductive paste printing process to the card forming process are the same as those in the first embodiment. In the conductive paste printing step, the conductive paste that becomes the wiring pattern 12 b extends between the fourth through hole 14 d and the terminal portion 52 a of the planar coil 52 via the surface of the insulator 20. .

また、前述の第1の実施の形態や第2の実施の形態において、平面コイル52を導電性ペーストを印刷することによっても形成することが可能である。
この場合、平面コイル52と半導体素子56とを電気的に接続する配線パターン12a、12bも導電性ペーストで形成されているから、配線パターン12a、12bと接触する平面コイル52の端子部52aの表面処理(金めっき処理)は行わなくても十分に相互間の電気的な接続を確保することが可能である。よって、図5に示す平面コイル52の端子部52aの表面処理工程は不要となる。
In the first embodiment and the second embodiment described above, the planar coil 52 can also be formed by printing a conductive paste.
In this case, since the wiring patterns 12a and 12b that electrically connect the planar coil 52 and the semiconductor element 56 are also formed of a conductive paste, the surface of the terminal portion 52a of the planar coil 52 that contacts the wiring patterns 12a and 12b. Even if processing (gold plating processing) is not performed, it is possible to sufficiently ensure electrical connection between them. Therefore, the surface treatment process of the terminal portion 52a of the planar coil 52 shown in FIG.

また、前述の各実施の形態では、半導体素子56は、平面コイル52と重ならない平面コイル52の外側の領域に位置決めして配置されているが、非接触型ICカード10の外形を小型化できるように平面コイル52の内側領域内に配置することも可能である。
また、平面コイル52として、金属薄板をプレス加工またはエッチング加工して形成したコイルを、絶縁樹脂薄膜体54に接着したものを用いることも可能である。
Further, in each of the above-described embodiments, the semiconductor element 56 is positioned and arranged in an area outside the planar coil 52 that does not overlap the planar coil 52. However, the outer shape of the non-contact type IC card 10 can be reduced in size. In this way, it can be arranged in the inner region of the planar coil 52.
Further, as the planar coil 52, a coil formed by pressing or etching a thin metal plate and bonded to the insulating resin thin film 54 can be used.

非接触型ICカードの第1の実施の形態の構造を説明するための説明図(要部平面図)である。It is explanatory drawing (principal part top view) for demonstrating the structure of 1st Embodiment of a non-contact-type IC card. 図1のW−W断面図である。It is WW sectional drawing of FIG. 非接触型ICカードの第2の実施の形態の構造を説明するための説明図(要部平面図)である。It is explanatory drawing (principal part top view) for demonstrating the structure of 2nd Embodiment of a non-contact-type IC card. 図3のW−W断面図である。It is WW sectional drawing of FIG. 図1の製造方法を説明するための工程図である。It is process drawing for demonstrating the manufacturing method of FIG. (a)は非接触型ICカードの構成を説明するための平面図、(b)はそのW−W断面図である。(A) is a top view for demonstrating the structure of a non-contact-type IC card, (b) is the WW sectional drawing. 従来の非接触型ICカードの一例の構成を説明するための平面図である。It is a top view for demonstrating the structure of an example of the conventional non-contact-type IC card. 図7のW−W断面図である。It is WW sectional drawing of FIG. 従来の非接触型ICカードの他の例の構成を説明するための平面図である。It is a top view for demonstrating the structure of the other example of the conventional non-contact-type IC card. 図9のW−W断面図である。It is WW sectional drawing of FIG.

符号の説明Explanation of symbols

10 非接触型ICカード
12 配線パターン
14a〜14e 貫通穴
52 平面コイル
52a 平面コイルの端子部
54 絶縁樹脂薄膜体
56 半導体素子
58 電極端子
DESCRIPTION OF SYMBOLS 10 Non-contact type IC card 12 Wiring pattern 14a-14e Through-hole 52 Planar coil 52a Terminal part of planar coil 54 Insulating resin thin film 56 Semiconductor element 58 Electrode terminal

Claims (7)

平面コイルと半導体素子とが絶縁樹脂薄膜体の一方の面に配置され、前記平面コイルの端子部と前記半導体素子の電極端子とが電気的に接続された非接触型ICカードを製造する非接触型ICカードの製造方法において、
絶縁樹脂薄膜体の一方の面に平面コイルを形成する平面コイル形成工程と、
平面コイルの両端子部を絶縁樹脂薄膜体の他方の面側に露出させる第1貫通穴および第2貫通穴、ならびに絶縁樹脂薄膜体の一方の面に配置される半導体素子の両電極端子を絶縁樹脂薄膜体の他方の面側に露出させる第3貫通穴および第4貫通穴を、絶縁樹脂薄膜体にあける穴あけ工程と、
両電極端子にバンプが形成された半導体素子を、該各バンプが第3貫通穴内および第4貫通穴内に位置するように絶縁樹脂薄膜体の一方の面に貼り付けて固定する半導体素子貼り付け工程と、
平面コイルの端子部と半導体素子の電極端子との間を電気的に接続する配線パターンを形成するように、絶縁樹脂薄膜体の他方の面に導電性ペーストを塗布するとともに、第1貫通穴内、第2貫通穴内、第3貫通穴内および第4貫通穴内に導電性ペーストを充填する工程と、
導電性ペーストを乾燥させるペースト乾燥工程と、
平面コイルと半導体素子とが配置された絶縁樹脂薄膜体に、その両側から樹脂製のオーバーシートを装着するカード化工程とを含むことを特徴とする非接触型ICカードの製造方法。
A non-contact type IC card in which a planar coil and a semiconductor element are disposed on one surface of an insulating resin thin film body, and a terminal portion of the planar coil and an electrode terminal of the semiconductor element are electrically connected Type IC card manufacturing method,
A planar coil forming step of forming a planar coil on one surface of the insulating resin thin film body;
Insulates the first through hole and the second through hole exposing both terminal portions of the planar coil on the other surface side of the insulating resin thin film body, and both electrode terminals of the semiconductor element disposed on one surface of the insulating resin thin film body A step of opening the third through hole and the fourth through hole exposed on the other surface side of the resin thin film body in the insulating resin thin film body;
A semiconductor element affixing step of adhering and fixing a semiconductor element having bumps formed on both electrode terminals to one surface of the insulating resin thin film body so that each bump is located in the third through hole and the fourth through hole When,
A conductive paste is applied to the other surface of the insulating resin thin film body so as to form a wiring pattern that electrically connects the terminal portion of the planar coil and the electrode terminal of the semiconductor element , and in the first through hole, Filling the conductive paste in the second through hole, the third through hole, and the fourth through hole;
A paste drying step for drying the conductive paste;
A method of manufacturing a non-contact type IC card, comprising: a step of forming a card on the insulating resin thin film body in which a planar coil and a semiconductor element are arranged, and mounting a resin oversheet from both sides thereof.
平面コイルが絶縁樹脂薄膜体の一方の面に配置され、半導体素子が絶縁樹脂薄膜体の他方の面に配置され、前記平面コイルの端子部と前記半導体素子の電極端子とが電気的に接続された非接触型ICカードを製造する非接触型ICカードの製造方法において、
絶縁樹脂薄膜体の一方の面に平面コイルを形成する平面コイル形成工程と、
絶縁樹脂薄膜体の他方の面に配置される半導体素子の両電極端子を絶縁樹脂薄膜体の一方の面側に露出させる第3貫通穴および第4貫通穴を、絶縁樹脂薄膜体にあける穴あけ工程と、
両電極端子にバンプが形成された半導体素子を、該各バンプが第3貫通穴内および第4貫通穴内に位置するように絶縁樹脂薄膜体の他方の面に貼り付けて固定する半導体素子貼り付け工程と、
平面コイルを横切る配線パターンを形成する部位には、平面コイルを覆うように絶縁体を配置する工程と、
平面コイルの端子部と半導体素子の電極端子との間を電気的に接続する配線パターンを形成するように、且つ平面コイルを横切る部位では前記絶縁体の表面を経由して、絶縁樹脂薄膜体の一方の面に導電性ペーストを塗布するとともに、第3貫通穴内および第4貫通穴内に導電性ペーストを充填する工程と、
導電性ペーストを乾燥させるペースト乾燥工程と、
平面コイルと半導体素子とが配置された絶縁樹脂薄膜体に、その両側から樹脂製のオーバーシートを装着するカード化工程とを含むことを特徴とする非接触型ICカードの製造方法。
The planar coil is disposed on one surface of the insulating resin thin film body, the semiconductor element is disposed on the other surface of the insulating resin thin film body, and the terminal portion of the planar coil and the electrode terminal of the semiconductor element are electrically connected. In a non-contact type IC card manufacturing method for manufacturing a non-contact type IC card,
A planar coil forming step of forming a planar coil on one surface of the insulating resin thin film body;
Drilling step of opening the third through hole and the fourth through hole in the insulating resin thin film body to expose both electrode terminals of the semiconductor element disposed on the other surface of the insulating resin thin film body on one surface side of the insulating resin thin film body When,
A semiconductor element affixing step of adhering and fixing a semiconductor element having bumps formed on both electrode terminals to the other surface of the insulating resin thin film body so that each bump is located in the third through hole and the fourth through hole When,
A step of arranging an insulator so as to cover the planar coil at a portion where a wiring pattern crossing the planar coil is formed;
A portion of the insulating resin thin film body passes through the surface of the insulator so as to form a wiring pattern for electrically connecting between the terminal portion of the planar coil and the electrode terminal of the semiconductor element, and at a portion crossing the planar coil. Applying a conductive paste on one surface and filling the conductive paste in the third through hole and the fourth through hole;
A paste drying step for drying the conductive paste;
A method of manufacturing a non-contact type IC card, comprising: a step of forming a card on the insulating resin thin film body in which a planar coil and a semiconductor element are arranged, and mounting a resin oversheet from both sides thereof.
前記平面コイルは絶縁樹脂薄膜体の一方の面に貼り付けられた金属箔をエッチングして形成されていることを特徴とする請求項1記載の非接触型ICカードの製造方法。   2. The method of manufacturing a non-contact type IC card according to claim 1, wherein the planar coil is formed by etching a metal foil attached to one surface of an insulating resin thin film body. 前記穴あけ工程を実行した後、
前記第1貫通穴および第2貫通穴から露出する平面コイルの両端子部の表面に金めっき皮膜を形成する表面処理工程を実行することを特徴とする請求項3記載の非接触型ICカードの製造方法。
After performing the drilling step,
4. The non-contact type IC card according to claim 3, wherein a surface treatment step of forming a gold plating film on the surfaces of both terminal portions of the planar coil exposed from the first through hole and the second through hole is performed. Production method.
前記平面コイルは絶縁樹脂薄膜体の一方の面に貼り付けられた金属箔をエッチングして形成されていることを特徴とする請求項2記載の非接触型ICカードの製造方法。   3. The method of manufacturing a non-contact type IC card according to claim 2, wherein the planar coil is formed by etching a metal foil attached to one surface of an insulating resin thin film body. 前記穴あけ工程を実行した後、
平面コイルの両端子部の表面に金めっき皮膜を形成する表面処理工程を実行することを特徴とする請求項5記載の非接触型ICカードの製造方法。
After performing the drilling step,
6. The method for manufacturing a non-contact type IC card according to claim 5, wherein a surface treatment step of forming a gold plating film on the surfaces of both terminal portions of the planar coil is executed.
前記平面コイルは絶縁樹脂薄膜体の一方の面に導電性ペーストを印刷して形成されていることを特徴とする請求項1または請求項2記載の非接触型ICカードの製造方法 3. The method of manufacturing a non-contact type IC card according to claim 1, wherein the planar coil is formed by printing a conductive paste on one surface of an insulating resin thin film body .
JP2003430923A 2003-12-25 2003-12-25 Non-contact type IC card manufacturing method Expired - Fee Related JP3831726B2 (en)

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