JP3269506B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a conductive pattern formed on an insulating sheet and a semiconductor pellet are electrically connected.

[0002]

2. Description of the Related Art A TAB type semiconductor device is used, for example, in a camera IC or the like assembled on a flexible sheet-like printed circuit board or the like, and an example thereof is shown below with reference to FIGS. Denotes a semiconductor pellet (hereinafter, referred to as a pellet), (2) denotes a frame-shaped sheet, and (3) denotes a metal foil lead. Then, the metal foil leads (3) are radially arranged from the inside to the outside of the frame-shaped sheet (2), and an intermediate portion thereof is bonded to the frame-shaped sheet (2), and
A bump electrode (4) formed by gold plating on the outer peripheral edge of the surface of the pellet (1) and an inner lead (3a) are bonded by thermocompression bonding to support the pellet (1) inside the frame-shaped sheet (2). I do.

As shown in FIG. 5, the TAB type semiconductor device (5) is formed by cutting a TAB tape (6) at a predetermined pitch and shape. The TAB tape (6) has a through hole (7). , A window opening (8), and a perforation hole (9), a metal foil lead (3) having a predetermined pattern is attached and formed on the surface of a long insulating sheet (10). 7)
Inside the bump electrode (4) ... and the inner lead (3)
The pellet (1) is supported in the through hole (7) by thermocompression bonding of (a).

[0004]

The problem to be solved is that, in a TAB type semiconductor device, when the number of electrodes and the number of leads increase due to the increase in the number of pins, bump electrodes (4). Since the electrodes are arranged on a straight line for each side, it is necessary to first reduce the electrode size and the pitch between the electrodes, and accordingly, the leads (3) must be thin and thin, and the pitch between the leads must be narrow.
It is difficult to form long leads, and it is easy to cause bonding failure, lead deformation, and short circuit, and there is a limit to increasing the number of pins. Also, the assemblability is reduced. Conventionally, bump electrodes (4) are arranged in a zigzag pattern, but the leads (3) are still thin and thin, and the pitch between the leads is narrow. The assemblability also decreases.

[0005]

According to the present invention, an almost flat surface is provided on an upper surface.
Forming a large number of flat electrode pads, from the electrode pad formation area
Semiconductor pellet with a position confirmation mark formed at the outer position
And a conductive pattern on one side, and the electrode pads on the other side.
Conductive lands are formed at positions corresponding to the
Etching the surface except the conductive land and its vicinity
Partially formed thin and transparent through conductive patterns and conductive lands
Electrical connection through the hole and the position of the semiconductor pellet
A position confirmation hole is provided at the position corresponding to the
The electrode pads of the body pellet and the conductive lands are electrically connected.
And an insulating sheet .

[0006]

According to the above technical means, the conductive pattern formed on one surface of the insulating sheet and the conductive land formed on the other surface are electrically connected to each other through the through hole, and the conductive land is connected to the pellet electrode pad. Are electrically connected to each other, an electrode arrangement pattern can be arbitrarily formed, and a semiconductor device having a large number of leads is obtained.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor device according to the present invention will be described below with reference to FIGS. First, FIGS. 1 (a) and 1 (b)
, (11) is an insulating sheet, and (12) is a pellet. (13) is a through hole. The insulating sheet (11)
Indicates the position confirmation holes (13) and feed holes (14)
.. forming a conductive pattern (16) formed by routing the wiring with an appropriate wiring pattern, and a conductive land (1) on the back surface.
7), and a conductive pattern (1) is formed through a through hole (18) penetrating the front and back sides on which a conductive layer (18a) is formed on the inner peripheral surface.
6) and the conductive land (17) are electrically connected. Then, as shown in FIG. 1B, the back surface is partially thinned by the thickness (d) except for the conductive land (17) and its vicinity by etching to locally project the conductive land (17). . Here, a conductive layer (18a) is formed on the inner peripheral surface of the through hole (18) by metal plating or the like, and a pellet (1) to be described later is formed on the insulating sheet (11).
They are arranged in the same pattern as the electrode pad formation pattern in 2). The pellets (12) are arranged in an arbitrary pattern on the upper surface.
Formed flat electrode pads (19) and cross-shaped position marks (M) [see FIG. 1 (a)]. (17) ... are electrically connected by thermocompression bonding or the like. Rank
The placement mark (M) indicates the semiconductor pellet (12) in the illustrated example.
Formed outside the four corner electrode pad formation areas,
Of the through holes (13) of (g)
It is arranged corresponding to the mark (M).

Next, the operation of the present invention based on the above configuration will be described. First, the pellet (12) is positioned and mounted on a bonding stage (not shown), heated and arranged below the sheet. In addition, the position confirmation holes (1
3) Align the position mark (M) with the electrode pad (19)
And the conductive lands (17) are checked for overlapping positions. Therefore, the locally protruding conductive lands (17) are overlapped on and closely adhered to the electrode pads (19), and are pressurized and thermocompressed with a capillary or the like from above the sheet to electrically connect them.
Then, even if the number of leads and the number of electrodes are large, the conductive pattern (1
6) and the electrode pads (19) on the upper surface of the pellet may be set in any arrangement pattern, and at the same time, the pitch between leads can be increased.

Next, another embodiment of the present invention will be described with reference to FIGS.
2 (a) and 2 (b), the difference is the structure of the conductive lands (20) and (21). In the embodiment shown in FIG. ), A conductive layer (22a) is adhered to the inner peripheral surface by metal plating or the like, and a metal (23) such as solder is filled in the hole so as to protrude toward the conductive land (20) on the back surface of the insulating sheet. To protrude. Then, the conductive pattern (16) on the surface of the insulating sheet and the conductive land (20) are electrically connected through the through hole (22), and the electrode pad (19) of the pellet (12) and the conductive land (20) are connected. When the electrical connection is performed by pressurization and thermocompression bonding, the filling metal (23) is also connected, the compression area increases, and the electrical and mechanical connection strength increases. or,
Since the diameter of the through hole can be reduced by an amount corresponding to the increase in the crimping area, the electrode arrangement pitch can be further reduced to increase the number of electrodes and the number of leads.

Further, in the embodiment shown in FIGS. 3 (a) and 3 (b), the conductive land (21) and the conductive pattern (16) formed on the front and back surfaces of the insulating sheet (11) are provided with a conductive layer on the inner peripheral surface. (24a) are electrically connected through the front and back through holes (24) formed therein, and the conductive lands (2) are formed on the back surface of the sheet.
1) is extended for a predetermined length from an electrical connection with the conductive pattern (16), and metal plating is applied to the extension (21a). Then, as shown in FIG.
Except for 1a), a resist film (25) is formed on the back surface of the sheet, and an electrode pad (19) of the pellet (12) is superposed on the extending portion (21a) for electrical connection. Then, the electrode pad (19) of the pellet (12) and the conductive land (2)
(1) The crimping area increases, and the electrical and mechanical connection strength increases. Further, similarly to the above, since the diameter of the through hole can be reduced, the electrode arrangement pitch can be further reduced, and the number of electrodes and the number of leads can be increased.

[0011]

According to the present invention, the conductive pattern formed on one surface of the insulating sheet and the conductive land formed on the other surface are electrically connected through the through holes, and the conductive land is connected to the pellet electrode pad. Are electrically connected to each other so that the electrode arrangement pattern can be set arbitrarily, the number of leads can be increased accordingly, and the pitch interval can be increased, which can cope with high density of pellets.

[Brief description of the drawings]

FIG. 1A is a partial plan view showing an embodiment of a semiconductor device according to the present invention. FIG. 2B is a side sectional view showing an electrical connection between a conductive pattern showing a main part of FIG. 1A and a conductive land and a pellet electrode pad.

FIG. 2 is a side sectional view showing an electrical connection between a conductive pattern and a conductive land and a pellet electrode pad showing a main part of another embodiment of the semiconductor device according to the present invention.

FIG. 3A is a partial plan view of a conductive land showing a main part of another embodiment of the semiconductor device according to the present invention.
FIG. 3B is a side sectional view showing an electrical connection between a conductive pattern showing a main part of FIG. 3A and a conductive land and a pellet electrode pad.

FIG. 4 is a side sectional view showing an example of a TAB type semiconductor device.

FIG. 5 is a partial plan view of the TAB tape.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Insulation sheet 12 Semiconductor pellet 13 Position check hole 16 Conductive pattern 17 Conductive land 18 Through hole 19 Electrode pad M Position mark

Claims (3)

(57) [Claims] 1. A large number of flat electrode pads are formed on an upper surface.
Position confirmation mark outside the electrode pad formation area
And a conductive pattern on one side
A conductive run on the other surface at a position corresponding to the electrode pad.
And the conductive land on the other surface and its vicinity
Excluded parts are etched to form thin parts and conductive
When the turns and conductive lands are electrically connected through through holes
In both cases, the position corresponding to the position confirmation mark on the semiconductor pellet
Position confirmation holes in the
A semiconductor device comprising: an insulating sheet to which an electric land is electrically connected . 2. A method in which a metal is filled in a through hole to electrically connect a conductive pattern on both surfaces of an insulating sheet and a conductive land, and that the metal filled in the through hole protrudes toward the conductive land. The semiconductor device according to claim 1, wherein: 3. A conductive land extends on a surface of an insulating sheet from an electrical connection portion with a conductive pattern by a predetermined length, and an electrode pad of a semiconductor pellet is overlapped on the extension portion to be electrically connected. The semiconductor device according to claim 1.