JP3814303B2 - ダイヤモンド及びダイヤモンド成長のための焼結方法 - Google Patents

ダイヤモンド及びダイヤモンド成長のための焼結方法 Download PDF

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Publication number
JP3814303B2
JP3814303B2 JP54364198A JP54364198A JP3814303B2 JP 3814303 B2 JP3814303 B2 JP 3814303B2 JP 54364198 A JP54364198 A JP 54364198A JP 54364198 A JP54364198 A JP 54364198A JP 3814303 B2 JP3814303 B2 JP 3814303B2
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Japan
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diamond
growth
crystals
twin
phase
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Expired - Fee Related
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JP54364198A
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Japanese (ja)
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JP2002500551A5 (enExample
JP2002500551A (ja
Inventor
キャンベル，ジェームス，ウィルバート
アディア，モーサ，モハメド
デービス，ジェフリー，ジョン
チャップマン，レイモンド，アルバート
タンク，クラウス
スチュワート，オーレット
ヘッジズ，レスリイ，ケイ
Original Assignee
デ ビアス インダストリアル ダイアモンド デイビジヨン（プロプライエタリイ）リミテツド
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Publication of JP2002500551A publication Critical patent/JP2002500551A/ja
Publication of JP2002500551A5 publication Critical patent/JP2002500551A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/062—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/0685—Crystal sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Liquid Crystal Substances (AREA)
JP54364198A 1997-04-17 1998-04-16 ダイヤモンド及びダイヤモンド成長のための焼結方法 Expired - Fee Related JP3814303B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
ZA97/3284 1997-04-17
ZA973284 1997-04-17
ZA97/3283 1997-04-17
PCT/GB1998/001115 WO1998046344A1 (en) 1997-04-17 1998-04-16 Sintering process for diamond and diamond growth
ZA973283 1998-04-16

Publications (3)

Publication Number Publication Date
JP2002500551A JP2002500551A (ja) 2002-01-08
JP2002500551A5 JP2002500551A5 (enExample) 2004-08-19
JP3814303B2 true JP3814303B2 (ja) 2006-08-30

Family

ID=27143809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54364198A Expired - Fee Related JP3814303B2 (ja) 1997-04-17 1998-04-16 ダイヤモンド及びダイヤモンド成長のための焼結方法

Country Status (12)

Country Link
US (1) US6270548B1 (enExample)
EP (1) EP0975423B1 (enExample)
JP (1) JP3814303B2 (enExample)
KR (1) KR100503541B1 (enExample)
CN (1) CN1119200C (enExample)
AT (1) ATE224228T1 (enExample)
AU (1) AU7062698A (enExample)
DE (1) DE69808064T2 (enExample)
ES (1) ES2184249T3 (enExample)
TW (1) TW453895B (enExample)
WO (1) WO1998046344A1 (enExample)
ZA (1) ZA983195B (enExample)

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KR100575905B1 (ko) * 1997-12-11 2006-05-02 드 비어스 인더스트리얼 다이아몬즈 (프로프라이어터리) 리미티드 결정 성장물
ATE220346T1 (de) * 1997-12-11 2002-07-15 De Beers Ind Diamond Kristall-enthaltendes material
DK1292414T3 (da) * 2000-06-13 2006-01-30 Element Six Pty Ltd Sammensatte diamantmasser
US20030162648A1 (en) * 2002-02-26 2003-08-28 Stewart Middlemiss Elongate ultra hard particle reinforced ultra hard materials and ceramics, tools and parts incorporating the same, and method of making the same
US20040071623A1 (en) * 2002-10-08 2004-04-15 Hatleberg John N. Synthetic diamonds prepared from roses
WO2004072435A1 (en) 2003-02-11 2004-08-26 Element Six (Pty) Ltd Cutting element
US20100178233A1 (en) * 2004-04-14 2010-07-15 Hatleberg John N Synthetic diamonds prepared from organic materials
RU2008108891A (ru) * 2005-08-11 2009-09-20 Элемент Сикс (Продакшн) (Пти) Лтд (Za) Абразивный элемент из поликристаллического алмаза и способ его изготовления
US9103172B1 (en) 2005-08-24 2015-08-11 Us Synthetic Corporation Polycrystalline diamond compact including a pre-sintered polycrystalline diamond table including a nonmetallic catalyst that limits infiltration of a metallic-catalyst infiltrant therein and applications therefor
US8734552B1 (en) * 2005-08-24 2014-05-27 Us Synthetic Corporation Methods of fabricating polycrystalline diamond and polycrystalline diamond compacts with a carbonate material
KR20090024788A (ko) * 2006-06-09 2009-03-09 엘리먼트 씩스 (프로덕션) (피티와이) 리미티드 초경질 복합 물질
US8236074B1 (en) 2006-10-10 2012-08-07 Us Synthetic Corporation Superabrasive elements, methods of manufacturing, and drill bits including same
US9017438B1 (en) 2006-10-10 2015-04-28 Us Synthetic Corporation Polycrystalline diamond compact including a polycrystalline diamond table with a thermally-stable region having at least one low-carbon-solubility material and applications therefor
US8034136B2 (en) 2006-11-20 2011-10-11 Us Synthetic Corporation Methods of fabricating superabrasive articles
US8080074B2 (en) 2006-11-20 2011-12-20 Us Synthetic Corporation Polycrystalline diamond compacts, and related methods and applications
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US8002859B2 (en) 2007-02-06 2011-08-23 Smith International, Inc. Manufacture of thermally stable cutting elements
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US9297211B2 (en) 2007-12-17 2016-03-29 Smith International, Inc. Polycrystalline diamond construction with controlled gradient metal content
US8999025B1 (en) 2008-03-03 2015-04-07 Us Synthetic Corporation Methods of fabricating a polycrystalline diamond body with a sintering aid/infiltrant at least saturated with non-diamond carbon and resultant products such as compacts
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
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US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
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US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
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US9315881B2 (en) 2008-10-03 2016-04-19 Us Synthetic Corporation Polycrystalline diamond, polycrystalline diamond compacts, methods of making same, and applications
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US8727042B2 (en) 2009-09-11 2014-05-20 Baker Hughes Incorporated Polycrystalline compacts having material disposed in interstitial spaces therein, and cutting elements including such compacts
US8579052B2 (en) * 2009-08-07 2013-11-12 Baker Hughes Incorporated Polycrystalline compacts including in-situ nucleated grains, earth-boring tools including such compacts, and methods of forming such compacts and tools
WO2011022474A2 (en) * 2009-08-18 2011-02-24 Baker Hughes Incorporated Method of forming polystalline diamond elements, polycrystalline diamond elements, and earth boring tools carrying such polycrystalline diamond elements
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CN102674840B (zh) * 2012-06-08 2013-12-18 河南理工大学 一种金刚石-硅材料的快速烧结制备方法
CN103482623B (zh) * 2013-09-05 2015-06-24 大连理工大学 一种用直流电弧法制备纳米金刚石的方法
CN105233759A (zh) * 2015-09-29 2016-01-13 河南飞孟金刚石工业有限公司 一种晶种法提高多晶金刚石产能的合成工艺
CN108101031A (zh) * 2017-12-22 2018-06-01 燕山大学 一种金刚石微粉表面原位生长石墨烯层的制备方法
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Also Published As

Publication number Publication date
CN1119200C (zh) 2003-08-27
WO1998046344A1 (en) 1998-10-22
ATE224228T1 (de) 2002-10-15
KR20010006439A (ko) 2001-01-26
ZA983195B (en) 1998-10-21
TW453895B (en) 2001-09-11
AU7062698A (en) 1998-11-11
US6270548B1 (en) 2001-08-07
ES2184249T3 (es) 2003-04-01
JP2002500551A (ja) 2002-01-08
CN1260733A (zh) 2000-07-19
EP0975423B1 (en) 2002-09-18
KR100503541B1 (ko) 2005-07-26
EP0975423A1 (en) 2000-02-02
DE69808064T2 (de) 2003-05-22
DE69808064D1 (de) 2002-10-24

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