ES2184249T3 - Procedimiento de sinterizado de diamantes y desarrollo de cristales de diamante. - Google Patents
Procedimiento de sinterizado de diamantes y desarrollo de cristales de diamante.Info
- Publication number
- ES2184249T3 ES2184249T3 ES98917386T ES98917386T ES2184249T3 ES 2184249 T3 ES2184249 T3 ES 2184249T3 ES 98917386 T ES98917386 T ES 98917386T ES 98917386 T ES98917386 T ES 98917386T ES 2184249 T3 ES2184249 T3 ES 2184249T3
- Authority
- ES
- Spain
- Prior art keywords
- diamond
- diamond crystals
- mass
- providing
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/0685—Crystal sintering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Liquid Crystal Substances (AREA)
Abstract
La invención se refiere a un procedimiento para fabricar un material unido y coherente que incluye una masa de cristales de diamante en una matriz, que opcionalmente contiene otra fase. El procedimiento incluye otros pasos para crear una fuente de cristales de diamante, proporcionar una pluralidad de centros de diamante definidos por cristales de diamante, introducir una masa reaccionante mediante la puesta en contacto de la fuente y de los centros de crecimiento con un solvente/catalizador, someter la masa reaccionante a condiciones de elevada temperatura y presión adecuadas para el crecimiento de los cristales en la zona de reacción de un aparato alta temperatura/alta presión para producir el material, y retirar los materiales de la zona de reacción. El procedimiento se caracteriza porque proporciona la supersaturación necesaria de carbón en el solvente/catalizador, al menos en parte y preferiblemente predominantemente, mediante la selección de la diferencia de tamaño de partículas entrela fuente de cristales y la de los centros de crecimiento. La masa de cristales de diamantes en la matriz del material aglomerado coherente de la invención tiene una alta concentración de mezclas de cristales de diamante.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ZA973284 | 1997-04-17 | ||
ZA973283 | 1998-04-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2184249T3 true ES2184249T3 (es) | 2003-04-01 |
Family
ID=27143809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES98917386T Expired - Lifetime ES2184249T3 (es) | 1997-04-17 | 1998-04-16 | Procedimiento de sinterizado de diamantes y desarrollo de cristales de diamante. |
Country Status (12)
Country | Link |
---|---|
US (1) | US6270548B1 (es) |
EP (1) | EP0975423B1 (es) |
JP (1) | JP3814303B2 (es) |
KR (1) | KR100503541B1 (es) |
CN (1) | CN1119200C (es) |
AT (1) | ATE224228T1 (es) |
AU (1) | AU7062698A (es) |
DE (1) | DE69808064T2 (es) |
ES (1) | ES2184249T3 (es) |
TW (1) | TW453895B (es) |
WO (1) | WO1998046344A1 (es) |
ZA (1) | ZA983195B (es) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6497853B1 (en) * | 1997-04-17 | 2002-12-24 | Moosa Mahomed Adia | Diamond growth |
WO1999029411A1 (en) * | 1997-12-11 | 1999-06-17 | De Beers Industrial Diamond Division (Proprietary) Limited | Crystal growth |
WO1999029412A1 (en) * | 1997-12-11 | 1999-06-17 | De Beers Industrial Diamond Division (Proprietary) Limited | Crystal-containing material |
DE60115891T2 (de) * | 2000-06-13 | 2006-06-14 | Element Six Pty Ltd | Verbunddiamantkörper |
CA2419752A1 (en) * | 2002-02-26 | 2003-08-26 | Smith International, Inc. | Elongate ultra hard particle reinforced ultra hard materials and ceramics, tools and parts incorporating the same, and method of making the same |
WO2004033766A2 (en) * | 2002-10-08 | 2004-04-22 | Hatleberg John N | Synthetic diamonds prepared from roses |
ATE359428T1 (de) | 2003-02-11 | 2007-05-15 | Element Six Pty Ltd | Schneidkörper |
US20100178233A1 (en) * | 2004-04-14 | 2010-07-15 | Hatleberg John N | Synthetic diamonds prepared from organic materials |
WO2007017745A1 (en) * | 2005-08-11 | 2007-02-15 | Element Six (Production) (Pty) Ltd | Polycrystalline diamond abrasive element and method of its production |
US8734552B1 (en) * | 2005-08-24 | 2014-05-27 | Us Synthetic Corporation | Methods of fabricating polycrystalline diamond and polycrystalline diamond compacts with a carbonate material |
US9103172B1 (en) | 2005-08-24 | 2015-08-11 | Us Synthetic Corporation | Polycrystalline diamond compact including a pre-sintered polycrystalline diamond table including a nonmetallic catalyst that limits infiltration of a metallic-catalyst infiltrant therein and applications therefor |
US20100009839A1 (en) * | 2006-06-09 | 2010-01-14 | Antionette Can | Ultrahard Composite Materials |
US8236074B1 (en) | 2006-10-10 | 2012-08-07 | Us Synthetic Corporation | Superabrasive elements, methods of manufacturing, and drill bits including same |
US9017438B1 (en) | 2006-10-10 | 2015-04-28 | Us Synthetic Corporation | Polycrystalline diamond compact including a polycrystalline diamond table with a thermally-stable region having at least one low-carbon-solubility material and applications therefor |
US8034136B2 (en) | 2006-11-20 | 2011-10-11 | Us Synthetic Corporation | Methods of fabricating superabrasive articles |
US8080074B2 (en) | 2006-11-20 | 2011-12-20 | Us Synthetic Corporation | Polycrystalline diamond compacts, and related methods and applications |
CA2674999A1 (en) * | 2007-02-05 | 2008-08-14 | Element Six (Production) (Pty) Ltd | Polycrystalline diamond (pcd) materials |
US8002859B2 (en) | 2007-02-06 | 2011-08-23 | Smith International, Inc. | Manufacture of thermally stable cutting elements |
GB0704516D0 (en) | 2007-03-08 | 2007-04-18 | Element Six Ltd | Diamond |
US9297211B2 (en) | 2007-12-17 | 2016-03-29 | Smith International, Inc. | Polycrystalline diamond construction with controlled gradient metal content |
US8999025B1 (en) | 2008-03-03 | 2015-04-07 | Us Synthetic Corporation | Methods of fabricating a polycrystalline diamond body with a sintering aid/infiltrant at least saturated with non-diamond carbon and resultant products such as compacts |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8384007B2 (en) | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US20100104874A1 (en) * | 2008-10-29 | 2010-04-29 | Smith International, Inc. | High pressure sintering with carbon additives |
GB2481957B (en) | 2009-05-06 | 2014-10-15 | Smith International | Methods of making and attaching tsp material for forming cutting elements, cutting elements having such tsp material and bits incorporating such cutting |
US8727042B2 (en) | 2009-09-11 | 2014-05-20 | Baker Hughes Incorporated | Polycrystalline compacts having material disposed in interstitial spaces therein, and cutting elements including such compacts |
WO2011017649A2 (en) * | 2009-08-07 | 2011-02-10 | Baker Hughes Incorporated | Polycrystalline compacts including in-situ nucleated grains earth-boring tools including such compacts, and methods of forming such compacts and tools |
US8496076B2 (en) | 2009-10-15 | 2013-07-30 | Baker Hughes Incorporated | Polycrystalline compacts including nanoparticulate inclusions, cutting elements and earth-boring tools including such compacts, and methods of forming such compacts |
WO2011022474A2 (en) * | 2009-08-18 | 2011-02-24 | Baker Hughes Incorporated | Method of forming polystalline diamond elements, polycrystalline diamond elements, and earth boring tools carrying such polycrystalline diamond elements |
US8505654B2 (en) * | 2009-10-09 | 2013-08-13 | Element Six Limited | Polycrystalline diamond |
US10309158B2 (en) | 2010-12-07 | 2019-06-04 | Us Synthetic Corporation | Method of partially infiltrating an at least partially leached polycrystalline diamond table and resultant polycrystalline diamond compacts |
US9027675B1 (en) | 2011-02-15 | 2015-05-12 | Us Synthetic Corporation | Polycrystalline diamond compact including a polycrystalline diamond table containing aluminum carbide therein and applications therefor |
CN102674840B (zh) * | 2012-06-08 | 2013-12-18 | 河南理工大学 | 一种金刚石-硅材料的快速烧结制备方法 |
CN103482623B (zh) * | 2013-09-05 | 2015-06-24 | 大连理工大学 | 一种用直流电弧法制备纳米金刚石的方法 |
CN105233759A (zh) * | 2015-09-29 | 2016-01-13 | 河南飞孟金刚石工业有限公司 | 一种晶种法提高多晶金刚石产能的合成工艺 |
CN108101031A (zh) * | 2017-12-22 | 2018-06-01 | 燕山大学 | 一种金刚石微粉表面原位生长石墨烯层的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2256900A1 (en) * | 1974-01-07 | 1975-08-01 | Inst Tugoplavkikh Metallov | Polycrystalline diamond prodn. from diamond powder - at very high temp. and press. using diamond grains of different size and additives |
FR2337583A1 (fr) | 1976-01-12 | 1977-08-05 | Gen Electric | Perfectionnements aux procedes et dispositifs pour la production de diamant synthetique |
SE457537B (sv) * | 1981-09-04 | 1989-01-09 | Sumitomo Electric Industries | Diamantpresskropp foer ett verktyg samt saett att framstaella densamma |
AU634601B2 (en) * | 1989-12-11 | 1993-02-25 | General Electric Company | Single-crystal diamond of very high thermal conductivity |
EP0699642A3 (en) * | 1994-08-29 | 1996-09-18 | Smith International | Whisker or fiber reinforced polycrystalline cubic boron nitride or diamond |
US5503104A (en) * | 1995-03-27 | 1996-04-02 | General Electric Company | Synthetic diamond product |
US5855996A (en) * | 1995-12-12 | 1999-01-05 | General Electric Company | Abrasive compact with improved properties |
ATE248020T1 (de) * | 1995-12-21 | 2003-09-15 | Element Six Pty Ltd | Diamantsynthese |
-
1998
- 1998-04-16 US US09/403,009 patent/US6270548B1/en not_active Expired - Fee Related
- 1998-04-16 CN CN98806208A patent/CN1119200C/zh not_active Expired - Fee Related
- 1998-04-16 KR KR10-1999-7009529A patent/KR100503541B1/ko not_active IP Right Cessation
- 1998-04-16 ES ES98917386T patent/ES2184249T3/es not_active Expired - Lifetime
- 1998-04-16 JP JP54364198A patent/JP3814303B2/ja not_active Expired - Fee Related
- 1998-04-16 DE DE69808064T patent/DE69808064T2/de not_active Expired - Fee Related
- 1998-04-16 ZA ZA983195A patent/ZA983195B/xx unknown
- 1998-04-16 AT AT98917386T patent/ATE224228T1/de not_active IP Right Cessation
- 1998-04-16 EP EP98917386A patent/EP0975423B1/en not_active Expired - Lifetime
- 1998-04-16 AU AU70626/98A patent/AU7062698A/en not_active Abandoned
- 1998-04-16 WO PCT/GB1998/001115 patent/WO1998046344A1/en active IP Right Grant
- 1998-06-02 TW TW087108641A patent/TW453895B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0975423A1 (en) | 2000-02-02 |
KR20010006439A (ko) | 2001-01-26 |
DE69808064D1 (de) | 2002-10-24 |
CN1260733A (zh) | 2000-07-19 |
JP2002500551A (ja) | 2002-01-08 |
US6270548B1 (en) | 2001-08-07 |
WO1998046344A1 (en) | 1998-10-22 |
JP3814303B2 (ja) | 2006-08-30 |
TW453895B (en) | 2001-09-11 |
ZA983195B (en) | 1998-10-21 |
CN1119200C (zh) | 2003-08-27 |
EP0975423B1 (en) | 2002-09-18 |
DE69808064T2 (de) | 2003-05-22 |
AU7062698A (en) | 1998-11-11 |
ATE224228T1 (de) | 2002-10-15 |
KR100503541B1 (ko) | 2005-07-26 |
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