JP3813716B2 - 基板の表面処理方法 - Google Patents
基板の表面処理方法 Download PDFInfo
- Publication number
- JP3813716B2 JP3813716B2 JP33800797A JP33800797A JP3813716B2 JP 3813716 B2 JP3813716 B2 JP 3813716B2 JP 33800797 A JP33800797 A JP 33800797A JP 33800797 A JP33800797 A JP 33800797A JP 3813716 B2 JP3813716 B2 JP 3813716B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- specific gravity
- liquid
- substrate
- phosphoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 49
- 238000004381 surface treatment Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 136
- 239000007788 liquid Substances 0.000 claims description 80
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 68
- 230000005484 gravity Effects 0.000 claims description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 42
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- 238000009835 boiling Methods 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 description 61
- 235000012431 wafers Nutrition 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Landscapes
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Wiring (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33800797A JP3813716B2 (ja) | 1997-11-20 | 1997-11-20 | 基板の表面処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33800797A JP3813716B2 (ja) | 1997-11-20 | 1997-11-20 | 基板の表面処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11154665A JPH11154665A (ja) | 1999-06-08 |
| JPH11154665A5 JPH11154665A5 (enExample) | 2005-07-14 |
| JP3813716B2 true JP3813716B2 (ja) | 2006-08-23 |
Family
ID=18314082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33800797A Expired - Fee Related JP3813716B2 (ja) | 1997-11-20 | 1997-11-20 | 基板の表面処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3813716B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020236243A1 (en) * | 2019-05-22 | 2020-11-26 | Sandisk Technologies Llc | Method of making a three-dimensional memory device using silicon nitride etching end point detection |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040140365A1 (en) | 2002-12-26 | 2004-07-22 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus |
| JP2014099480A (ja) * | 2012-11-13 | 2014-05-29 | Fujifilm Corp | 半導体基板のエッチング方法及び半導体素子の製造方法 |
| JP6994899B2 (ja) * | 2017-10-20 | 2022-01-14 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
| JP7267079B2 (ja) * | 2019-04-18 | 2023-05-01 | 株式会社Ｓｃｒｅｅｎホールディングス | 処理液調製装置、基板処理装置、処理液調製方法および基板処理方法 |
| CN114883227A (zh) * | 2022-06-14 | 2022-08-09 | 赛莱克斯微系统科技（北京）有限公司 | 一种半导体湿法生产设备 |
| CN117542755B (zh) * | 2023-11-13 | 2024-06-07 | 苏州恩腾半导体科技有限公司 | 用于提供加热的蚀刻溶液的系统和方法 |
| CN118221083A (zh) * | 2024-01-30 | 2024-06-21 | 贵州开磷集团股份有限公司 | 一种料浆法粉状map生产方法 |
-
1997
- 1997-11-20 JP JP33800797A patent/JP3813716B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020236243A1 (en) * | 2019-05-22 | 2020-11-26 | Sandisk Technologies Llc | Method of making a three-dimensional memory device using silicon nitride etching end point detection |
| US11075218B2 (en) | 2019-05-22 | 2021-07-27 | Sandisk Technologies Llc | Method of making a three-dimensional memory device using silicon nitride etching end point detection |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11154665A (ja) | 1999-06-08 |
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