JP3788926B2 - 半導体装置及びトランジスタの駆動方法 - Google Patents

半導体装置及びトランジスタの駆動方法 Download PDF

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Publication number
JP3788926B2
JP3788926B2 JP2001322159A JP2001322159A JP3788926B2 JP 3788926 B2 JP3788926 B2 JP 3788926B2 JP 2001322159 A JP2001322159 A JP 2001322159A JP 2001322159 A JP2001322159 A JP 2001322159A JP 3788926 B2 JP3788926 B2 JP 3788926B2
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JP
Japan
Prior art keywords
gate
capacitor
gate input
input capacitance
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2001322159A
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English (en)
Japanese (ja)
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JP2003133929A5 (enExample
JP2003133929A (ja
Inventor
敏幸 古家
喜久 本田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001322159A priority Critical patent/JP3788926B2/ja
Priority to US10/123,153 priority patent/US6756623B2/en
Publication of JP2003133929A publication Critical patent/JP2003133929A/ja
Publication of JP2003133929A5 publication Critical patent/JP2003133929A5/ja
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Publication of JP3788926B2 publication Critical patent/JP3788926B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

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  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
JP2001322159A 2001-10-19 2001-10-19 半導体装置及びトランジスタの駆動方法 Expired - Lifetime JP3788926B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001322159A JP3788926B2 (ja) 2001-10-19 2001-10-19 半導体装置及びトランジスタの駆動方法
US10/123,153 US6756623B2 (en) 2001-10-19 2002-04-17 Semiconductor device and method of driving transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001322159A JP3788926B2 (ja) 2001-10-19 2001-10-19 半導体装置及びトランジスタの駆動方法

Publications (3)

Publication Number Publication Date
JP2003133929A JP2003133929A (ja) 2003-05-09
JP2003133929A5 JP2003133929A5 (enExample) 2005-03-17
JP3788926B2 true JP3788926B2 (ja) 2006-06-21

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ID=19139252

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JP2001322159A Expired - Lifetime JP3788926B2 (ja) 2001-10-19 2001-10-19 半導体装置及びトランジスタの駆動方法

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US (1) US6756623B2 (enExample)
JP (1) JP3788926B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4144541B2 (ja) * 2004-03-19 2008-09-03 日産自動車株式会社 電圧駆動型半導体素子用駆動回路
US7080639B1 (en) 2005-06-30 2006-07-25 Visteon Global Technologies, Inc. Soft IGBT turn-on ignition applications
US20070126497A1 (en) * 2005-12-01 2007-06-07 Sithambaram Palaniappan Method and apparatus for programming one or more programmable components of a bootstrap circuit
JP2008306618A (ja) * 2007-06-11 2008-12-18 Nissan Motor Co Ltd 電圧駆動型素子を駆動するための駆動回路
US20100109750A1 (en) * 2008-10-30 2010-05-06 Jens Barrenscheen Boost Mechanism Using Driver Current Adjustment for Switching Phase Improvement
JP5321126B2 (ja) * 2009-02-24 2013-10-23 富士通セミコンダクター株式会社 アナログスイッチ回路
JP5492518B2 (ja) * 2009-10-02 2014-05-14 株式会社日立製作所 半導体駆動回路、及びそれを用いた半導体装置
JP5541044B2 (ja) * 2010-09-28 2014-07-09 サンケン電気株式会社 ゲート駆動回路及びスイッチング電源装置
DE102014214252B3 (de) * 2014-04-24 2015-07-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zum schalten eines halbleiterbasierten schalters und sensor zur erfassung einer stromänderungsgeschwindigkeit an einem halbleiterbasierten schalter
US9276562B2 (en) * 2014-04-24 2016-03-01 Qualcomm, Incorporated Charge-recycling circuits including switching power stages with floating rails
KR20160143909A (ko) * 2015-06-04 2016-12-15 엘에스산전 주식회사 Igbt 구동 장치
US10658357B2 (en) * 2018-02-13 2020-05-19 Texas Instruments Incorporated Driver for driving a capacitive load
US11095215B2 (en) * 2018-11-26 2021-08-17 Texas Instruments Incorporated Multi-capacitor bootstrap circuit
JP7140015B2 (ja) * 2019-03-18 2022-09-21 株式会社デンソー スイッチの駆動回路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027617A (ja) 1988-06-25 1990-01-11 Fujitsu Denso Ltd 高速駆動回路
JP3222330B2 (ja) * 1994-09-20 2001-10-29 株式会社日立製作所 半導体回路及び半導体集積回路
JPH08163862A (ja) 1994-12-01 1996-06-21 Murata Mfg Co Ltd Ｍｏｓｆｅｔドライブ方法および回路
JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
JP3447949B2 (ja) * 1998-03-31 2003-09-16 株式会社東芝 絶縁ゲート型半導体素子のゲート駆動回路、電力変換装置
US6459324B1 (en) * 2000-10-23 2002-10-01 International Rectifier Corporation Gate drive circuit with feedback-controlled active resistance
US6531895B1 (en) * 2002-02-08 2003-03-11 Delphi Technologies, Inc. Isolated gate drive circuit having a switched input capacitor

Also Published As

Publication number Publication date
US6756623B2 (en) 2004-06-29
US20030075748A1 (en) 2003-04-24
JP2003133929A (ja) 2003-05-09

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