JP3779882B2 - 現像方法、パターン形成方法およびこれらを用いたフォトマスクの製造方法、半導体装置の製造方法 - Google Patents

現像方法、パターン形成方法およびこれらを用いたフォトマスクの製造方法、半導体装置の製造方法 Download PDF

Info

Publication number
JP3779882B2
JP3779882B2 JP2001045567A JP2001045567A JP3779882B2 JP 3779882 B2 JP3779882 B2 JP 3779882B2 JP 2001045567 A JP2001045567 A JP 2001045567A JP 2001045567 A JP2001045567 A JP 2001045567A JP 3779882 B2 JP3779882 B2 JP 3779882B2
Authority
JP
Japan
Prior art keywords
resist
pattern
developer
organic solvent
compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001045567A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001318472A5 (https=
JP2001318472A (ja
Inventor
敦子 藤野
輝彦 熊田
敦史 押田
耕志 丹下
準 福間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001045567A priority Critical patent/JP3779882B2/ja
Publication of JP2001318472A publication Critical patent/JP2001318472A/ja
Publication of JP2001318472A5 publication Critical patent/JP2001318472A5/ja
Application granted granted Critical
Publication of JP3779882B2 publication Critical patent/JP3779882B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Materials For Photolithography (AREA)
JP2001045567A 2000-02-28 2001-02-21 現像方法、パターン形成方法およびこれらを用いたフォトマスクの製造方法、半導体装置の製造方法 Expired - Fee Related JP3779882B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001045567A JP3779882B2 (ja) 2000-02-28 2001-02-21 現像方法、パターン形成方法およびこれらを用いたフォトマスクの製造方法、半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-50768 2000-02-28
JP2000050768 2000-02-28
JP2001045567A JP3779882B2 (ja) 2000-02-28 2001-02-21 現像方法、パターン形成方法およびこれらを用いたフォトマスクの製造方法、半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001318472A JP2001318472A (ja) 2001-11-16
JP2001318472A5 JP2001318472A5 (https=) 2004-11-11
JP3779882B2 true JP3779882B2 (ja) 2006-05-31

Family

ID=26586183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001045567A Expired - Fee Related JP3779882B2 (ja) 2000-02-28 2001-02-21 現像方法、パターン形成方法およびこれらを用いたフォトマスクの製造方法、半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP3779882B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140148457A (ko) 2012-03-30 2014-12-31 후지필름 가부시키가이샤 레지스트의 현상 방법, 레지스트 패턴의 형성 방법, 몰드의 제조 방법, 및 그들에 사용되는 현상액

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006227174A (ja) * 2005-02-16 2006-08-31 Ricoh Co Ltd レジスト現像液及びパターン形成方法
JP5767919B2 (ja) * 2010-09-17 2015-08-26 富士フイルム株式会社 パターン形成方法
EP2690497A4 (en) * 2011-03-24 2014-08-20 Nissan Chemical Ind Ltd POLYMERIC DEVELOPER
JP6209307B2 (ja) * 2011-09-30 2017-10-04 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
US9459536B1 (en) * 2015-06-30 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Negative tone developer composition for extreme ultraviolet lithography
JP6679929B2 (ja) * 2015-12-28 2020-04-15 日本ゼオン株式会社 重合体およびポジ型レジスト組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602946A (ja) * 1983-06-20 1985-01-09 Fujitsu Ltd ポジ型レジスト材料
JPS60117244A (ja) * 1983-11-30 1985-06-24 Fujitsu Ltd パタ−ン形成方法
JPS60140234A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd パタ−ン形成方法
JPH079874B2 (ja) * 1985-03-15 1995-02-01 株式会社東芝 電子ビ−ム描画方法
JPH083636B2 (ja) * 1986-11-29 1996-01-17 富士通株式会社 電子線ポジレジスト
JP2550201B2 (ja) * 1989-03-03 1996-11-06 富士通株式会社 半導体装置の製造方法及びそれに用いるパターン形成用塗布溶液
JP2867479B2 (ja) * 1989-10-19 1999-03-08 富士通株式会社 レジストパターンの形成方法
JPH10228117A (ja) * 1997-02-14 1998-08-25 Nippon Telegr & Teleph Corp <Ntt> レジストの現像方法およびそれに用いるリンス液

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140148457A (ko) 2012-03-30 2014-12-31 후지필름 가부시키가이샤 레지스트의 현상 방법, 레지스트 패턴의 형성 방법, 몰드의 제조 방법, 및 그들에 사용되는 현상액
US9417530B2 (en) 2012-03-30 2016-08-16 Fujifilm Corporation Method for developing resist, method for forming a resist pattern, method for producing a mold, and developing fluid utilized in these methods

Also Published As

Publication number Publication date
JP2001318472A (ja) 2001-11-16

Similar Documents

Publication Publication Date Title
TWI895761B (zh) 對經顯影圖案層進行處理的方法
JP4045180B2 (ja) リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
TWI309756B (en) Water-soluble resin composition, pattern forming method and resist pattern inspection method
US20090253080A1 (en) Photoresist Image-Forming Process Using Double Patterning
TWI417682B (zh) 微細化圖案之形成方法及用於它之光阻基板處理液
US8703402B2 (en) Resist pattern forming method and developer
JPH08503983A (ja) フォトレジスト用底部反射防止塗料における金属イオンの低減
JP2011517080A (ja) パターン硬化工程を含むフォトレジストパターン間の寸法を縮小する方法
CN1439119A (zh) 防止显影缺陷的方法和材料
WO2007148776A1 (ja) 微細化されたレジストパターンの形成方法
JP2003518657A (ja) フォトレジストリンス用シンナー及びこれを利用したフォトレジスト膜の処理方法
JP3779882B2 (ja) 現像方法、パターン形成方法およびこれらを用いたフォトマスクの製造方法、半導体装置の製造方法
JP2003233189A (ja) マスクブランク、並びにこれに用いる保護膜とマスクブランクのパターン形成方法
TW200424775A (en) Positive photoresist composition and resist pattern formation method
KR100512544B1 (ko) 현상 방법, 패턴 형성 방법과, 이들을 이용한 포토마스크또는 반도체 장치의 제조 방법
JP2001318472A5 (https=)
JP2003507760A (ja) フォトレジスト用の反射防止膜用組成物
CN1095553C (zh) 含2,4－二硝基－1－萘酚的正性光刻胶组合物
JPH02248952A (ja) 感光性組成物
KR100596269B1 (ko) 반도체 소자의 노광방법
US7468227B2 (en) Method of reducing the average process bias during production of a reticle
JP2008102343A (ja) 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法
JPH06348036A (ja) レジストパターン形成方法
WO2001022170A1 (fr) Procede de formation d&#39;un motif de resist presentant une resistance amelioree a la gravure seche
JP3735665B2 (ja) 微細パターン形成方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051025

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051222

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060228

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060303

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100310

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100310

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110310

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110310

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120310

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130310

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130310

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140310

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees