JP3766239B2 - 半導体増幅回路および無線通信装置 - Google Patents

半導体増幅回路および無線通信装置 Download PDF

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Publication number
JP3766239B2
JP3766239B2 JP24246699A JP24246699A JP3766239B2 JP 3766239 B2 JP3766239 B2 JP 3766239B2 JP 24246699 A JP24246699 A JP 24246699A JP 24246699 A JP24246699 A JP 24246699A JP 3766239 B2 JP3766239 B2 JP 3766239B2
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Japan
Prior art keywords
terminal
semiconductor
output
amplifier circuit
bias
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Expired - Fee Related
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JP24246699A
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English (en)
Japanese (ja)
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JP2000151310A (ja
JP2000151310A5 (enExample
Inventor
裕崇 上野
康弘 布川
徹朗 安達
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP24246699A priority Critical patent/JP3766239B2/ja
Publication of JP2000151310A publication Critical patent/JP2000151310A/ja
Publication of JP2000151310A5 publication Critical patent/JP2000151310A5/ja
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Publication of JP3766239B2 publication Critical patent/JP3766239B2/ja
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  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
JP24246699A 1998-08-31 1999-08-30 半導体増幅回路および無線通信装置 Expired - Fee Related JP3766239B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24246699A JP3766239B2 (ja) 1998-08-31 1999-08-30 半導体増幅回路および無線通信装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24470998 1998-08-31
JP10-244709 1998-08-31
JP24246699A JP3766239B2 (ja) 1998-08-31 1999-08-30 半導体増幅回路および無線通信装置

Related Child Applications (1)

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JP2003362053A Division JP2004088804A (ja) 1998-08-31 2003-10-22 半導体増幅回路および無線通信装置

Publications (3)

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JP2000151310A JP2000151310A (ja) 2000-05-30
JP2000151310A5 JP2000151310A5 (enExample) 2004-10-28
JP3766239B2 true JP3766239B2 (ja) 2006-04-12

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JP24246699A Expired - Fee Related JP3766239B2 (ja) 1998-08-31 1999-08-30 半導体増幅回路および無線通信装置

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JP (1) JP3766239B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002052588A1 (fr) 2000-12-25 2002-07-04 Hitachi, Ltd. Dispositif semi-conducteur et ses procede et appareil de fabrication
TW594888B (en) 2001-09-05 2004-06-21 Hitachi Ltd Semiconductor device and manufacturing method thereof and wireless communication device
JP3838547B2 (ja) 2001-12-11 2006-10-25 株式会社ルネサステクノロジ 高周波電力増幅回路用の電源装置
JP3932259B2 (ja) 2001-12-12 2007-06-20 株式会社ルネサステクノロジ 高周波電力増幅回路および無線通信用電子部品
KR20040022254A (ko) * 2002-09-03 2004-03-12 (주)나리지 온 전력 제어 수단을 포함한 전력 증폭 장치
CN1639968A (zh) 2002-09-05 2005-07-13 株式会社瑞萨科技 用于放大高频的电子组件和射频通讯系统
JP2004140518A (ja) 2002-10-16 2004-05-13 Renesas Technology Corp 高周波電力増幅用電子部品および無線通信システム
JP2004140633A (ja) 2002-10-18 2004-05-13 Hitachi Ltd 高周波電力増幅用電子部品および無線通信システム
JP4160365B2 (ja) 2002-11-07 2008-10-01 株式会社ルネサステクノロジ 高周波電力増幅用電子部品および無線通信システム
JP2004328107A (ja) 2003-04-22 2004-11-18 Renesas Technology Corp 高周波電力増幅用半導体集積回路および高周波電力増幅用電子部品並びに無線通信システム
JP2004328555A (ja) 2003-04-28 2004-11-18 Renesas Technology Corp 高周波電力増幅用電子部品および無線通信システム
JP4287193B2 (ja) 2003-05-15 2009-07-01 株式会社ルネサステクノロジ 高周波電力増幅用電子部品および無線通信システム
JP2005020476A (ja) 2003-06-27 2005-01-20 Renesas Technology Corp 高周波電力増幅回路および無線通信システム
JP2005223877A (ja) 2004-01-05 2005-08-18 Renesas Technology Corp 高周波電力増幅回路
JP2005229268A (ja) 2004-02-12 2005-08-25 Renesas Technology Corp 高周波電力増幅回路および無線通信システム
JP2006013566A (ja) 2004-06-22 2006-01-12 Renesas Technology Corp 高周波電力増幅用電子部品
JP2006013753A (ja) 2004-06-24 2006-01-12 Renesas Technology Corp 無線通信システムおよび半導体集積回路
JP2006094076A (ja) 2004-09-24 2006-04-06 Renesas Technology Corp 高周波電力増幅回路および高周波電力増幅用電子部品
JP2006094075A (ja) 2004-09-24 2006-04-06 Renesas Technology Corp 高周波電力増幅用半導体集積回路およびこれを搭載した電子部品
JP4488309B2 (ja) 2005-02-28 2010-06-23 株式会社ルネサステクノロジ 高周波電力増幅用電子部品
JP4683468B2 (ja) * 2005-03-22 2011-05-18 ルネサスエレクトロニクス株式会社 高周波電力増幅回路
WO2009063535A1 (ja) * 2007-11-16 2009-05-22 Fujitsu Limited バイアス回路、及びバイアス回路に対する制御方法
JP2011124679A (ja) * 2009-12-09 2011-06-23 Tdk Corp 電力増幅器
JP2016025453A (ja) 2014-07-18 2016-02-08 セイコーエプソン株式会社 回路装置、電子機器及び移動体

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JP2000151310A (ja) 2000-05-30

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