JP3763131B2 - 相変化型情報記録媒体 - Google Patents
相変化型情報記録媒体 Download PDFInfo
- Publication number
- JP3763131B2 JP3763131B2 JP2003289590A JP2003289590A JP3763131B2 JP 3763131 B2 JP3763131 B2 JP 3763131B2 JP 2003289590 A JP2003289590 A JP 2003289590A JP 2003289590 A JP2003289590 A JP 2003289590A JP 3763131 B2 JP3763131 B2 JP 3763131B2
- Authority
- JP
- Japan
- Prior art keywords
- phase change
- recording medium
- information recording
- melting point
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Semiconductor Memories (AREA)
Description
2 上部電極
3 下部電極
3a ビア
3b 金属層
4 絶縁膜
5 ガラス基板
10a メモリ素子
10b メモリ素子
51 ビットライン
52 ワードライン
53 アドレスデコーダ
54 メモリセル
55 選択用トランジスタ
56 定電圧源(Vdd)
57 書き込み読み出しスイッチ部
57a セット用トランジスタ
57b リセット用トランジスタ
57c リード用トランジスタ
58 拡散層
59 ウェル
60 シリコン基板
61 コンタクト
70 セット用パルス発生回路
71 リセット用パルス発生回路
72 リード用パルス発生回路
73a ダイオード
73b ダイオード
73c ダイオード
Claims (1)
- 室温下において非晶質状態と結晶質状態との相変化を可逆的かつ電気的に行わせることが可能であり、SeとSbとTeとの合金からなり、各元素の組成比がSe x Sb y Te z (x≧10,z≧60,x+y+z=100)を満たすことを特徴とする相変化型情報記録媒体。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003289590A JP3763131B2 (ja) | 2003-08-08 | 2003-08-08 | 相変化型情報記録媒体 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003289590A JP3763131B2 (ja) | 2003-08-08 | 2003-08-08 | 相変化型情報記録媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005059258A JP2005059258A (ja) | 2005-03-10 |
JP3763131B2 true JP3763131B2 (ja) | 2006-04-05 |
Family
ID=34367866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003289590A Expired - Fee Related JP3763131B2 (ja) | 2003-08-08 | 2003-08-08 | 相変化型情報記録媒体 |
Country Status (1)
Country | Link |
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JP (1) | JP3763131B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5474272B2 (ja) * | 2005-03-15 | 2014-04-16 | ピーエスフォー ルクスコ エスエイアールエル | メモリ装置及びその製造方法 |
US7601995B2 (en) * | 2005-10-27 | 2009-10-13 | Infineon Technologies Ag | Integrated circuit having resistive memory cells |
JP5116774B2 (ja) * | 2007-11-16 | 2013-01-09 | 株式会社アルバック | カルコゲナイド膜およびその製造方法 |
CN102903846A (zh) * | 2012-09-27 | 2013-01-30 | 同济大学 | 一种Sb80Te20/SbSe纳米复合多层相变薄膜及其制备和应用 |
-
2003
- 2003-08-08 JP JP2003289590A patent/JP3763131B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2005059258A (ja) | 2005-03-10 |
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