JP3762765B2 - 垂直空洞表面放射レーザ及びその製造方法 - Google Patents
垂直空洞表面放射レーザ及びその製造方法 Download PDFInfo
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- JP3762765B2 JP3762765B2 JP2003308707A JP2003308707A JP3762765B2 JP 3762765 B2 JP3762765 B2 JP 3762765B2 JP 2003308707 A JP2003308707 A JP 2003308707A JP 2003308707 A JP2003308707 A JP 2003308707A JP 3762765 B2 JP3762765 B2 JP 3762765B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
110 下部反射層
120 活性層
130 酸化可能層
140 上部反射層
150 絶縁領域
160 絶縁膜
170 上部電極
180 下部電極
190 保護膜
B トレンチ
C 酸化された部分
D 酸化口径
Claims (11)
- 基板と、
前記基板上に積層形成された下部反射層と、
前記下部反射層上に形成され、光を生成する活性層と、
前記活性層上に形成され、電流の流れをガイドする開口を有するように形成される絶縁領域と、
前記絶縁領域上に積層形成される上部反射層と、
その深さが前記上部反射層、活性層、及び下部反射層の少なくとも一部分まで拡張形成され、前記絶縁領域を形成するための酸化可能層の酸化速度を調節するために形成される所定個数のセグメントに分けた環状のトレンチと、
前記トレンチの表面全体及び前記トレンチで囲まれた内側領域に位置する前記上部反射鏡の表面に光出力用のウィンドウを除いて形成される絶縁膜と、
前記上部反射鏡の表面に形成された絶縁膜上に形成され、その端部が上部反射層と接触するように下方に屈曲する上部電極と、
前記基板下部に形成される下部電極と、を含んで構成されることを特徴とする垂直空洞表面放射レーザ。 - 前記セグメントに分けたトレンチは、前記絶縁領域を形成するための酸化プロセスの際に、水蒸気と接触する前記酸化可能層の酸化速度がより速い部分の面積を最小化するように前記酸化可能層の予め決められた所定位置に形成される請求項1記載の垂直空洞表面放射レーザ
- 前記セグメントに分けたトレンチのサイズ及び個数により前記酸化可能層の酸化速度が決定される請求項1記載の垂直空洞表面放射レーザ。
- 前記セグメントに分けたトレンチは4セグメントに分けたトレンチからなる請求項1〜請求項3のいずれか1項に記載の垂直空洞表面放射レーザ。
- 前記電流流れをガイドする開口は円形を有するように形成される請求項1記載の垂直空洞表面放射レーザ。
- 基板上に下部反射層、活性層、酸化可能層、上部反射層を積層形成する段階と、
前記上部反射層上にセグメントに分けたトレンチのマスクパターンを形成してから、これをエッチングマスクとして用いるエッチングプロセスを進行して、その深さを下部の前記上部反射層、酸化可能層、活性層、及び前記上部反射層の少なくとも一部分まで拡張させたセグメントに分けた環状のトレンチを形成する段階と、
所定時間で酸化雰囲気に露出させて前記酸化可能層を選択的に酸化させて中央一部に開口を有する絶縁領域を形成する段階と、
前記トレンチの表面全体及び前記トレンチで囲まれた内部領域に位置する前記上部反射層の表面に絶縁膜を形成する際、該上部反射層の一部を露出させて光出力用のウィンドウを形成する段階と、
前記上部反射鏡の表面に形成された絶縁膜上に上部電極を形成する際、その端部が前記ウィンドウ周囲の上部反射層と接するように屈曲する上部電極を形成する段階と、
前記基板下部に下部電極を形成する過程と、を含むことを特徴とする垂直空洞表面放射レーザの製造方法。 - 前記セグメントに分けたトレンチを形成する前に前記上部反射層上に酸化防止保護膜を形成する段階をさらに含む請求項6記載の垂直空洞表面放射レーザの製造方法。
- 前記保護膜はSiO2膜である請求項7記載の垂直空洞表面放射レーザの製造方法。
- 前記トレンチのサイズ及び個数により酸化可能層の酸化速度が決定される請求項6記載の垂直空洞表面放射レーザの製造方法。
- 前記セグメントに分けたトレンチは4セグメントに分けたトレンチからなる請求項6または請求項7記載の垂直空洞表面放射レーザの製造方法。
- 前記電流流れをガイドする開口は円形を有する請求項6記載の垂直空洞表面放射レーザの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0081041A KR100487224B1 (ko) | 2002-12-18 | 2002-12-18 | 수직공동 표면방사 레이저 및 그 제조방법 |
Publications (2)
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JP2004200649A JP2004200649A (ja) | 2004-07-15 |
JP3762765B2 true JP3762765B2 (ja) | 2006-04-05 |
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JP2003308707A Expired - Fee Related JP3762765B2 (ja) | 2002-12-18 | 2003-09-01 | 垂直空洞表面放射レーザ及びその製造方法 |
Country Status (3)
Country | Link |
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US (1) | US6917640B2 (ja) |
JP (1) | JP3762765B2 (ja) |
KR (1) | KR100487224B1 (ja) |
Cited By (3)
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EP2120302A2 (en) | 2008-05-15 | 2009-11-18 | Ricoh Company, Ltd. | Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus |
EP2131459A2 (en) | 2008-06-05 | 2009-12-09 | Ricoh Company, Ltd. | Surface-emitting laser |
EP2133965A2 (en) | 2008-06-11 | 2009-12-16 | Ricoh Company, Limited | Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus |
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JP4687064B2 (ja) * | 2004-10-22 | 2011-05-25 | ソニー株式会社 | 面発光型半導体レーザ素子 |
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CN100377456C (zh) * | 2006-05-17 | 2008-03-26 | 中微光电子(潍坊)有限公司 | 垂直腔面发射半导体激光二极管的外延结构 |
KR101170569B1 (ko) | 2006-05-26 | 2012-08-01 | 삼성전자주식회사 | 수직공동 표면방출 레이저장치 |
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2002
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-
2003
- 2003-05-28 US US10/447,017 patent/US6917640B2/en not_active Expired - Lifetime
- 2003-09-01 JP JP2003308707A patent/JP3762765B2/ja not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2120302A2 (en) | 2008-05-15 | 2009-11-18 | Ricoh Company, Ltd. | Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus |
EP2131459A2 (en) | 2008-06-05 | 2009-12-09 | Ricoh Company, Ltd. | Surface-emitting laser |
US8421837B2 (en) | 2008-06-05 | 2013-04-16 | Ricoh Company, Ltd. | Surface-emitting laser element, surface-emitting laser array, optical scanning device, and image forming apparatus |
EP2133965A2 (en) | 2008-06-11 | 2009-12-16 | Ricoh Company, Limited | Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus |
Also Published As
Publication number | Publication date |
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JP2004200649A (ja) | 2004-07-15 |
KR100487224B1 (ko) | 2005-05-03 |
US6917640B2 (en) | 2005-07-12 |
US20040120376A1 (en) | 2004-06-24 |
KR20040054217A (ko) | 2004-06-25 |
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