JP3729952B2 - 反射型表示装置の作製方法 - Google Patents
反射型表示装置の作製方法 Download PDFInfo
- Publication number
- JP3729952B2 JP3729952B2 JP31003296A JP31003296A JP3729952B2 JP 3729952 B2 JP3729952 B2 JP 3729952B2 JP 31003296 A JP31003296 A JP 31003296A JP 31003296 A JP31003296 A JP 31003296A JP 3729952 B2 JP3729952 B2 JP 3729952B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- film
- display device
- manufacturing
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 20
- 239000010408 film Substances 0.000 claims description 80
- 229910052782 aluminium Inorganic materials 0.000 claims description 65
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 65
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 239000011229 interlayer Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000009719 polyimide resin Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 239000011159 matrix material Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000010407 anodic oxide Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- -1 containing aluminum Chemical compound 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31003296A JP3729952B2 (ja) | 1996-11-06 | 1996-11-06 | 反射型表示装置の作製方法 |
| US08/951,954 US6056614A (en) | 1996-11-06 | 1997-10-17 | Method of manufacturing pixel electrode for reflection type display device |
| US09/469,984 US6243153B1 (en) | 1996-11-06 | 1999-12-21 | Method of manufacturing pixel electrode for reflection type display device |
| US09/870,868 US6508686B2 (en) | 1996-11-06 | 2001-05-30 | Method of manufacturing pixel electrode for reflection type display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31003296A JP3729952B2 (ja) | 1996-11-06 | 1996-11-06 | 反射型表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10144927A JPH10144927A (ja) | 1998-05-29 |
| JPH10144927A5 JPH10144927A5 (enExample) | 2004-10-21 |
| JP3729952B2 true JP3729952B2 (ja) | 2005-12-21 |
Family
ID=18000345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31003296A Expired - Fee Related JP3729952B2 (ja) | 1996-11-06 | 1996-11-06 | 反射型表示装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (3) | US6056614A (enExample) |
| JP (1) | JP3729952B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3729952B2 (ja) * | 1996-11-06 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 反射型表示装置の作製方法 |
| JP3157796B2 (ja) * | 1998-12-28 | 2001-04-16 | 日本電気移動通信株式会社 | 携帯電話機 |
| JP4472073B2 (ja) | 1999-09-03 | 2010-06-02 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
| TW511298B (en) * | 1999-12-15 | 2002-11-21 | Semiconductor Energy Lab | EL display device |
| KR100679096B1 (ko) * | 1999-12-30 | 2007-02-05 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 |
| KR100380141B1 (ko) * | 2000-09-25 | 2003-04-11 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치용 어레이 기판 및 그의 제조 방법 |
| US6724150B2 (en) | 2001-02-01 | 2004-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP2002329576A (ja) | 2001-04-27 | 2002-11-15 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| US8999836B2 (en) * | 2005-05-13 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US8772627B2 (en) * | 2009-08-07 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US20110216408A1 (en) * | 2010-03-05 | 2011-09-08 | Chang-Ching Tsai | Linearly polarized light converter |
| TWI686652B (zh) * | 2015-03-18 | 2020-03-01 | 日商凸版印刷股份有限公司 | 薄膜電晶體陣列、影像顯示裝置及薄膜電晶體陣列的製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5694386A (en) * | 1979-12-27 | 1981-07-30 | Suwa Seikosha Kk | Liquiddcrystal display unit |
| US4431272A (en) * | 1980-05-08 | 1984-02-14 | Kabushiki Kaisha Suwa Seikosha | Liquid crystal display device |
| JP2604867B2 (ja) * | 1990-01-11 | 1997-04-30 | 松下電器産業株式会社 | 反射型液晶表示デバイス |
| US5736267A (en) * | 1994-08-17 | 1998-04-07 | Asahi Glass Company Ltd. | Transparent conductive film and method for its production, and sputtering target |
| JPH08166605A (ja) * | 1994-10-14 | 1996-06-25 | Sharp Corp | 液晶表示装置 |
| JP2768313B2 (ja) * | 1995-06-13 | 1998-06-25 | 日本電気株式会社 | 反射型液晶表示装置 |
| JP3143591B2 (ja) * | 1995-09-14 | 2001-03-07 | キヤノン株式会社 | 表示装置 |
| US5917563A (en) * | 1995-10-16 | 1999-06-29 | Sharp Kabushiki Kaisha | Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line |
| US6072454A (en) * | 1996-03-01 | 2000-06-06 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
| JP3992797B2 (ja) * | 1996-09-25 | 2007-10-17 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示装置 |
| JP3043638B2 (ja) * | 1996-11-05 | 2000-05-22 | 日本電気株式会社 | 反射型液晶表示装置およびその製造方法 |
| JP3729952B2 (ja) * | 1996-11-06 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 反射型表示装置の作製方法 |
| US6088070A (en) * | 1997-01-17 | 2000-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode |
-
1996
- 1996-11-06 JP JP31003296A patent/JP3729952B2/ja not_active Expired - Fee Related
-
1997
- 1997-10-17 US US08/951,954 patent/US6056614A/en not_active Expired - Lifetime
-
1999
- 1999-12-21 US US09/469,984 patent/US6243153B1/en not_active Expired - Fee Related
-
2001
- 2001-05-30 US US09/870,868 patent/US6508686B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20010029144A1 (en) | 2001-10-11 |
| US6243153B1 (en) | 2001-06-05 |
| US6056614A (en) | 2000-05-02 |
| JPH10144927A (ja) | 1998-05-29 |
| US6508686B2 (en) | 2003-01-21 |
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