JP3681523B2 - 光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法 - Google Patents

光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法 Download PDF

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JP3681523B2
JP3681523B2 JP30380897A JP30380897A JP3681523B2 JP 3681523 B2 JP3681523 B2 JP 3681523B2 JP 30380897 A JP30380897 A JP 30380897A JP 30380897 A JP30380897 A JP 30380897A JP 3681523 B2 JP3681523 B2 JP 3681523B2
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light
reflectance
semiconductor region
measurement light
excitation light
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Japanese (ja)
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JPH1187448A (ja
JPH1187448A5 (https=
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浩二 江利口
隆順 山田
雅則 奥山
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP30380897A 1996-11-08 1997-11-06 光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法 Expired - Fee Related JP3681523B2 (ja)

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Application Number Priority Date Filing Date Title
JP30380897A JP3681523B2 (ja) 1996-11-08 1997-11-06 光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP29659296 1996-11-08
JP8-296592 1996-11-08
JP35061296 1996-12-27
JP8-350612 1996-12-27
JP1538297 1997-01-29
JP18984197 1997-07-15
JP9-15382 1997-07-15
JP9-189841 1997-07-15
JP30380897A JP3681523B2 (ja) 1996-11-08 1997-11-06 光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法

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JPH1187448A JPH1187448A (ja) 1999-03-30
JP3681523B2 true JP3681523B2 (ja) 2005-08-10
JPH1187448A5 JPH1187448A5 (https=) 2005-08-18

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JP30380897A Expired - Fee Related JP3681523B2 (ja) 1996-11-08 1997-11-06 光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049220A (en) * 1998-06-10 2000-04-11 Boxer Cross Incorporated Apparatus and method for evaluating a wafer of semiconductor material
TWI249215B (en) * 2001-06-01 2006-02-11 Toshiba Corp Film quality inspecting method and film quality inspecting apparatus
US6878559B2 (en) * 2002-09-23 2005-04-12 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
US7700382B2 (en) 2003-09-24 2010-04-20 Panasonic Corporation Impurity introducing method using optical characteristics to determine annealing conditions
CN100517573C (zh) * 2004-05-21 2009-07-22 松下电器产业株式会社 掺入杂质的方法和使用该方法的电子元件
US20090233383A1 (en) 2005-02-23 2009-09-17 Tomohiro Okumura Plasma Doping Method and Apparatus
JP4363368B2 (ja) 2005-06-13 2009-11-11 住友電気工業株式会社 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法
US20180286643A1 (en) * 2017-03-29 2018-10-04 Tokyo Electron Limited Advanced optical sensor, system, and methodologies for etch processing monitoring
US10978278B2 (en) 2018-07-31 2021-04-13 Tokyo Electron Limited Normal-incident in-situ process monitor sensor

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