JPH1187448A5 - - Google Patents

Info

Publication number
JPH1187448A5
JPH1187448A5 JP1997303808A JP30380897A JPH1187448A5 JP H1187448 A5 JPH1187448 A5 JP H1187448A5 JP 1997303808 A JP1997303808 A JP 1997303808A JP 30380897 A JP30380897 A JP 30380897A JP H1187448 A5 JPH1187448 A5 JP H1187448A5
Authority
JP
Japan
Prior art keywords
light
change
rate
semiconductor region
reflectance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997303808A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1187448A (ja
JP3681523B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP30380897A priority Critical patent/JP3681523B2/ja
Priority claimed from JP30380897A external-priority patent/JP3681523B2/ja
Publication of JPH1187448A publication Critical patent/JPH1187448A/ja
Application granted granted Critical
Publication of JP3681523B2 publication Critical patent/JP3681523B2/ja
Publication of JPH1187448A5 publication Critical patent/JPH1187448A5/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP30380897A 1996-11-08 1997-11-06 光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法 Expired - Fee Related JP3681523B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30380897A JP3681523B2 (ja) 1996-11-08 1997-11-06 光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP29659296 1996-11-08
JP8-296592 1996-11-08
JP35061296 1996-12-27
JP8-350612 1996-12-27
JP1538297 1997-01-29
JP18984197 1997-07-15
JP9-15382 1997-07-15
JP9-189841 1997-07-15
JP30380897A JP3681523B2 (ja) 1996-11-08 1997-11-06 光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法

Publications (3)

Publication Number Publication Date
JPH1187448A JPH1187448A (ja) 1999-03-30
JP3681523B2 JP3681523B2 (ja) 2005-08-10
JPH1187448A5 true JPH1187448A5 (https=) 2005-08-18

Family

ID=27519697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30380897A Expired - Fee Related JP3681523B2 (ja) 1996-11-08 1997-11-06 光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法

Country Status (1)

Country Link
JP (1) JP3681523B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049220A (en) * 1998-06-10 2000-04-11 Boxer Cross Incorporated Apparatus and method for evaluating a wafer of semiconductor material
TWI249215B (en) * 2001-06-01 2006-02-11 Toshiba Corp Film quality inspecting method and film quality inspecting apparatus
US6878559B2 (en) * 2002-09-23 2005-04-12 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
US7700382B2 (en) 2003-09-24 2010-04-20 Panasonic Corporation Impurity introducing method using optical characteristics to determine annealing conditions
CN100517573C (zh) * 2004-05-21 2009-07-22 松下电器产业株式会社 掺入杂质的方法和使用该方法的电子元件
US20090233383A1 (en) 2005-02-23 2009-09-17 Tomohiro Okumura Plasma Doping Method and Apparatus
JP4363368B2 (ja) 2005-06-13 2009-11-11 住友電気工業株式会社 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法
US20180286643A1 (en) * 2017-03-29 2018-10-04 Tokyo Electron Limited Advanced optical sensor, system, and methodologies for etch processing monitoring
US10978278B2 (en) 2018-07-31 2021-04-13 Tokyo Electron Limited Normal-incident in-situ process monitor sensor

Similar Documents

Publication Publication Date Title
US6113733A (en) Apparatus and method for optical evaluation, apparatus and method for manufacturing semiconductor device, method of controlling apparatus for manufacturing semiconductor device, and semiconductor device
US6849470B1 (en) Apparatus and method for optical evaluation, apparatus and method for manufacturing semiconductor device, method of controlling apparatus for manufacturing semiconductor device, and semiconductor device
US6395563B1 (en) Device for manufacturing semiconductor device and method of manufacturing the same
JP3329685B2 (ja) 計測装置および計測方法
US7795593B2 (en) Surface contamination analyzer for semiconductor wafers
US8778205B2 (en) Processing method and processing system
US7892986B2 (en) Ashing method and apparatus therefor
US20100009469A1 (en) Plasma doping method and apparatus
US20040018647A1 (en) Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry
JP3681523B2 (ja) 光学的評価装置，光学的評価方法，半導体装置の製造装置，半導体装置の製造装置の管理方法
JPH1187448A5 (https=)
KR20010098462A (ko) 구리 산화물 두께의 검출 방법 및 장치
US7141510B2 (en) Plasma processing method
Nawaz et al. Multi-cycle chamber conditioning for plasma etching of SiO2: from optimization to stability in lot processing
JP2000150493A (ja) 半導体装置の製造装置
KR19980042218A (ko) 광학적 평가장치, 광학적 평가방법, 반도체 장치의 제조장치,반도체 장치의 제조방법, 반도체 장치의 제조장치의 관리방법및 반도체 장치
CN100511599C (zh) 灰化设备、灰化方法及杂质掺入设备
US7393460B2 (en) Plasma processing method and plasma processing apparatus
JP4018829B2 (ja) 半導体装置の製造方法
KR100854082B1 (ko) 플라즈마 식각 장치를 이용하여 시즈닝 하는 방법
JP2001274139A (ja) アッシング装置およびアッシング方法
KR100611109B1 (ko) 반도체 장치의 콘택홀 검사 방법
JP3397715B2 (ja) 半導体装置の製造方法
JPH11238723A (ja) プラズマ処理のモニタリング方法及び装置
JP2000150468A (ja) プラズマエッチング室の監視方法