JP3667202B2 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
JP3667202B2
JP3667202B2 JP2000212767A JP2000212767A JP3667202B2 JP 3667202 B2 JP3667202 B2 JP 3667202B2 JP 2000212767 A JP2000212767 A JP 2000212767A JP 2000212767 A JP2000212767 A JP 2000212767A JP 3667202 B2 JP3667202 B2 JP 3667202B2
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JP
Japan
Prior art keywords
gas
substrate
vacuum pump
pump
gas injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000212767A
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English (en)
Japanese (ja)
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JP2002033281A (ja
JP2002033281A5 (https=
Inventor
松太郎 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2000212767A priority Critical patent/JP3667202B2/ja
Priority to US09/902,766 priority patent/US6514348B2/en
Publication of JP2002033281A publication Critical patent/JP2002033281A/ja
Publication of JP2002033281A5 publication Critical patent/JP2002033281A5/ja
Application granted granted Critical
Publication of JP3667202B2 publication Critical patent/JP3667202B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2000212767A 2000-07-13 2000-07-13 基板処理装置 Expired - Fee Related JP3667202B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000212767A JP3667202B2 (ja) 2000-07-13 2000-07-13 基板処理装置
US09/902,766 US6514348B2 (en) 2000-07-13 2001-07-12 Substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000212767A JP3667202B2 (ja) 2000-07-13 2000-07-13 基板処理装置

Publications (3)

Publication Number Publication Date
JP2002033281A JP2002033281A (ja) 2002-01-31
JP2002033281A5 JP2002033281A5 (https=) 2004-12-02
JP3667202B2 true JP3667202B2 (ja) 2005-07-06

Family

ID=18708638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000212767A Expired - Fee Related JP3667202B2 (ja) 2000-07-13 2000-07-13 基板処理装置

Country Status (2)

Country Link
US (1) US6514348B2 (https=)
JP (1) JP3667202B2 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537420B2 (en) * 1999-12-17 2003-03-25 Texas Instruments Incorporated Method and apparatus for restricting process fluid flow within a showerhead assembly
JP3667202B2 (ja) * 2000-07-13 2005-07-06 株式会社荏原製作所 基板処理装置
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
JP3886424B2 (ja) * 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
US6953730B2 (en) * 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US7160577B2 (en) * 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7135421B2 (en) * 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7221586B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
TW589396B (en) * 2003-01-07 2004-06-01 Arima Optoelectronics Corp Chemical vapor deposition reactor
US7192892B2 (en) * 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7717684B2 (en) * 2003-08-21 2010-05-18 Ebara Corporation Turbo vacuum pump and semiconductor manufacturing apparatus having the same
WO2005112084A1 (en) * 2004-05-18 2005-11-24 Mecharonics Co., Ltd. Method for forming organic light-emitting layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP4885000B2 (ja) * 2007-02-13 2012-02-29 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
US8252114B2 (en) * 2008-03-28 2012-08-28 Tokyo Electron Limited Gas distribution system and method for distributing process gas in a processing system
JP5075793B2 (ja) * 2008-11-06 2012-11-21 東京エレクトロン株式会社 可動ガス導入構造物及び基板処理装置
JP2010174779A (ja) * 2009-01-30 2010-08-12 Hitachi High-Technologies Corp 真空処理装置
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
JP5902896B2 (ja) * 2011-07-08 2016-04-13 東京エレクトロン株式会社 基板処理装置
JP5944883B2 (ja) * 2013-12-18 2016-07-05 東京エレクトロン株式会社 粒子逆流防止部材及び基板処理装置
JP6738485B2 (ja) * 2016-08-26 2020-08-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低圧リフトピンキャビティハードウェア
US10559451B2 (en) * 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes
GB2575451B (en) * 2018-07-09 2021-01-27 Edwards Ltd Vacuum pump with through channel and vacuum chamber
TWI901580B (zh) * 2019-03-15 2025-10-21 美商蘭姆研究公司 用於蝕刻反應器的渦輪分子泵及陰極組件
GB2584160A (en) * 2019-05-24 2020-11-25 Edwards Ltd Vacuum assembly and vacuum pump with an axial through passage
GB2591814A (en) * 2020-02-10 2021-08-11 Edwards Vacuum Llc Housing for a vacuum pump

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873833A (en) * 1988-11-23 1989-10-17 American Telephone Telegraph Company, At&T Bell Laboratories Apparatus comprising a high-vacuum chamber
JP2000183037A (ja) * 1998-12-11 2000-06-30 Tokyo Electron Ltd 真空処理装置
US6327863B1 (en) * 2000-05-05 2001-12-11 Helix Technology Corporation Cryopump with gate valve control
JP3667202B2 (ja) * 2000-07-13 2005-07-06 株式会社荏原製作所 基板処理装置
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions

Also Published As

Publication number Publication date
JP2002033281A (ja) 2002-01-31
US6514348B2 (en) 2003-02-04
US20020005167A1 (en) 2002-01-17

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