JP3663392B2 - プラズマエッチング処理装置 - Google Patents

プラズマエッチング処理装置 Download PDF

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Publication number
JP3663392B2
JP3663392B2 JP2002155500A JP2002155500A JP3663392B2 JP 3663392 B2 JP3663392 B2 JP 3663392B2 JP 2002155500 A JP2002155500 A JP 2002155500A JP 2002155500 A JP2002155500 A JP 2002155500A JP 3663392 B2 JP3663392 B2 JP 3663392B2
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sample
plasma
processing chamber
gas
magnetic field
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JP2002155500A
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Japanese (ja)
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JP2003077904A5 (enExample
JP2003077904A (ja
Inventor
哲徳 加治
克哉 渡辺
克彦 三谷
徹 大坪
新一 田地
潤一 田中
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2002155500A priority Critical patent/JP3663392B2/ja
Publication of JP2003077904A publication Critical patent/JP2003077904A/ja
Publication of JP2003077904A5 publication Critical patent/JP2003077904A5/ja
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Publication of JP3663392B2 publication Critical patent/JP3663392B2/ja
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Expired - Lifetime legal-status Critical Current

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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2002155500A 1996-03-01 2002-05-29 プラズマエッチング処理装置 Expired - Lifetime JP3663392B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002155500A JP3663392B2 (ja) 1996-03-01 2002-05-29 プラズマエッチング処理装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8-44391 1996-03-01
JP4439196 1996-03-01
JP793897 1997-01-20
JP9-7938 1997-01-20
JP2002155500A JP3663392B2 (ja) 1996-03-01 2002-05-29 プラズマエッチング処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP04527597A Division JP3499104B2 (ja) 1996-03-01 1997-02-28 プラズマ処理装置及びプラズマ処理方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004206943A Division JP4084335B2 (ja) 1996-03-01 2004-07-14 プラズマエッチング処理装置
JP2004315515A Division JP4388455B2 (ja) 1996-03-01 2004-10-29 プラズマエッチング処理装置

Publications (3)

Publication Number Publication Date
JP2003077904A JP2003077904A (ja) 2003-03-14
JP2003077904A5 JP2003077904A5 (enExample) 2005-06-02
JP3663392B2 true JP3663392B2 (ja) 2005-06-22

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JP2002155500A Expired - Lifetime JP3663392B2 (ja) 1996-03-01 2002-05-29 プラズマエッチング処理装置

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JP (1) JP3663392B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7976673B2 (en) 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
JP2005079416A (ja) * 2003-09-02 2005-03-24 Hitachi Ltd プラズマ処理装置
JP2005260011A (ja) * 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
JP4550710B2 (ja) * 2005-10-04 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理方法および装置
JP2008166844A (ja) * 2008-03-17 2008-07-17 Hitachi High-Technologies Corp プラズマ処理装置
TWI390582B (zh) * 2008-07-16 2013-03-21 Sumitomo Heavy Industries Plasma processing device and plasma processing method
JP6564802B2 (ja) * 2017-03-22 2019-08-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
EP3921860A2 (en) * 2019-02-06 2021-12-15 Evatec AG Method of producing ions and apparatus
JP7763025B2 (ja) * 2023-02-14 2025-10-31 東京エレクトロン株式会社 プラズマ処理装置

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JP2003077904A (ja) 2003-03-14

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