JP3613472B2 - プラズマエッチング装置用部材及びその製造方法 - Google Patents
プラズマエッチング装置用部材及びその製造方法 Download PDFInfo
- Publication number
- JP3613472B2 JP3613472B2 JP2002096896A JP2002096896A JP3613472B2 JP 3613472 B2 JP3613472 B2 JP 3613472B2 JP 2002096896 A JP2002096896 A JP 2002096896A JP 2002096896 A JP2002096896 A JP 2002096896A JP 3613472 B2 JP3613472 B2 JP 3613472B2
- Authority
- JP
- Japan
- Prior art keywords
- yag
- yttrium oxide
- plasma etching
- etching apparatus
- quartz glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001020 plasma etching Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 43
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 40
- 238000000576 coating method Methods 0.000 claims description 32
- 239000011248 coating agent Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 27
- 230000003746 surface roughness Effects 0.000 claims description 13
- 229910052727 yttrium Inorganic materials 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- -1 yttrium compound Chemical class 0.000 claims description 6
- 238000007750 plasma spraying Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 230000002159 abnormal effect Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 229910021488 crystalline silicon dioxide Inorganic materials 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Coating By Spraying Or Casting (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002096896A JP3613472B2 (ja) | 2002-03-29 | 2002-03-29 | プラズマエッチング装置用部材及びその製造方法 |
| TW092125680A TWI242245B (en) | 2002-03-29 | 2003-09-16 | Component for plasma etching device and the making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002096896A JP3613472B2 (ja) | 2002-03-29 | 2002-03-29 | プラズマエッチング装置用部材及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003297809A JP2003297809A (ja) | 2003-10-17 |
| JP2003297809A5 JP2003297809A5 (enExample) | 2004-12-24 |
| JP3613472B2 true JP3613472B2 (ja) | 2005-01-26 |
Family
ID=29387549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002096896A Expired - Lifetime JP3613472B2 (ja) | 2002-03-29 | 2002-03-29 | プラズマエッチング装置用部材及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3613472B2 (enExample) |
| TW (1) | TWI242245B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7645526B2 (en) | 2003-09-16 | 2010-01-12 | Shin-Etsu Quartz Products, Ltd. | Member for plasma etching device and method for manufacture thereof |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI282597B (en) | 2004-12-28 | 2007-06-11 | Toshiba Ceramics Co | Yttrium-containing ceramic coated material and method of manufacturing the same |
| JP4981294B2 (ja) * | 2005-09-30 | 2012-07-18 | 株式会社フジミインコーポレーテッド | 溶射皮膜 |
| JP2010183092A (ja) * | 2005-11-15 | 2010-08-19 | Panasonic Corp | プラズマ処理装置 |
| JP5283824B2 (ja) | 2006-01-18 | 2013-09-04 | 東京応化工業株式会社 | 膜形成組成物 |
| JP4970887B2 (ja) * | 2006-10-06 | 2012-07-11 | 株式会社アルバック | 装置構成部品の再生方法 |
| CN101971715B (zh) * | 2008-03-05 | 2016-09-28 | Emd株式会社 | 高频天线单元及等离子处理装置 |
| CN109072432B (zh) * | 2016-03-04 | 2020-12-08 | Beneq有限公司 | 抗等离子蚀刻膜及其制造方法 |
| US11017984B2 (en) * | 2016-04-28 | 2021-05-25 | Applied Materials, Inc. | Ceramic coated quartz lid for processing chamber |
| JP6991474B2 (ja) * | 2017-02-28 | 2022-01-12 | 国立大学法人長岡技術科学大学 | 酸化ケイ素基材上に酸化イットリウム膜が形成された複合材料の製造方法 |
| TWI714965B (zh) * | 2018-02-15 | 2021-01-01 | 日商京瓷股份有限公司 | 電漿處理裝置用構件及具備其之電漿處理裝置 |
| US11087961B2 (en) * | 2018-03-02 | 2021-08-10 | Lam Research Corporation | Quartz component with protective coating |
| JP7140222B2 (ja) * | 2020-04-30 | 2022-09-21 | Toto株式会社 | 複合構造物および複合構造物を備えた半導体製造装置 |
| TW202302910A (zh) | 2020-04-30 | 2023-01-16 | 日商Ｔｏｔｏ股份有限公司 | 複合結構物及具備複合結構物之半導體製造裝置 |
| JP7115582B2 (ja) * | 2020-04-30 | 2022-08-09 | Toto株式会社 | 複合構造物および複合構造物を備えた半導体製造装置 |
| CN117985949B (zh) * | 2024-04-03 | 2024-06-21 | 苏州高芯众科半导体有限公司 | 一种硅钇铝铬镁氧中间相喷涂粉及其制备方法 |
-
2002
- 2002-03-29 JP JP2002096896A patent/JP3613472B2/ja not_active Expired - Lifetime
-
2003
- 2003-09-16 TW TW092125680A patent/TWI242245B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7645526B2 (en) | 2003-09-16 | 2010-01-12 | Shin-Etsu Quartz Products, Ltd. | Member for plasma etching device and method for manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200512826A (en) | 2005-04-01 |
| JP2003297809A (ja) | 2003-10-17 |
| TWI242245B (en) | 2005-10-21 |
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