TWI242245B - Component for plasma etching device and the making method - Google Patents
Component for plasma etching device and the making method Download PDFInfo
- Publication number
- TWI242245B TWI242245B TW092125680A TW92125680A TWI242245B TW I242245 B TWI242245 B TW I242245B TW 092125680 A TW092125680 A TW 092125680A TW 92125680 A TW92125680 A TW 92125680A TW I242245 B TWI242245 B TW I242245B
- Authority
- TW
- Taiwan
- Prior art keywords
- yag
- yttrium oxide
- yttrium
- film
- plasma etching
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000001020 plasma etching Methods 0.000 title claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 17
- -1 yttrium aluminum cadmium Chemical compound 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 11
- 230000003746 surface roughness Effects 0.000 claims abstract description 11
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 21
- 239000002253 acid Substances 0.000 claims description 13
- 238000010285 flame spraying Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000002775 capsule Substances 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 238000004381 surface treatment Methods 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 11
- 230000002159 abnormal effect Effects 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000007921 spray Substances 0.000 abstract description 3
- 238000005507 spraying Methods 0.000 abstract description 3
- 238000000563 Verneuil process Methods 0.000 abstract 1
- 238000007500 overflow downdraw method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 4
- 229910002026 crystalline silica Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910021488 crystalline silicon dioxide Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 150000003748 yttrium compounds Chemical class 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Coating By Spraying Or Casting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002096896A JP3613472B2 (ja) | 2002-03-29 | 2002-03-29 | プラズマエッチング装置用部材及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200512826A TW200512826A (en) | 2005-04-01 |
| TWI242245B true TWI242245B (en) | 2005-10-21 |
Family
ID=29387549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092125680A TWI242245B (en) | 2002-03-29 | 2003-09-16 | Component for plasma etching device and the making method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3613472B2 (enExample) |
| TW (1) | TWI242245B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7914854B2 (en) | 2006-01-18 | 2011-03-29 | Tokyo Ohka Kogyo Co., Ltd. | Film-forming composition |
| TWI714965B (zh) * | 2018-02-15 | 2021-01-01 | 日商京瓷股份有限公司 | 電漿處理裝置用構件及具備其之電漿處理裝置 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1589567B1 (en) | 2003-09-16 | 2007-04-04 | Shin-Etsu Quartz Products Co., Ltd. | Member for plasma etching device and method for manufacture thereof |
| TWI282597B (en) | 2004-12-28 | 2007-06-11 | Toshiba Ceramics Co | Yttrium-containing ceramic coated material and method of manufacturing the same |
| JP4981294B2 (ja) * | 2005-09-30 | 2012-07-18 | 株式会社フジミインコーポレーテッド | 溶射皮膜 |
| JP2010183092A (ja) * | 2005-11-15 | 2010-08-19 | Panasonic Corp | プラズマ処理装置 |
| JP4970887B2 (ja) * | 2006-10-06 | 2012-07-11 | 株式会社アルバック | 装置構成部品の再生方法 |
| CN101971715B (zh) * | 2008-03-05 | 2016-09-28 | Emd株式会社 | 高频天线单元及等离子处理装置 |
| CN109072432B (zh) * | 2016-03-04 | 2020-12-08 | Beneq有限公司 | 抗等离子蚀刻膜及其制造方法 |
| US11017984B2 (en) * | 2016-04-28 | 2021-05-25 | Applied Materials, Inc. | Ceramic coated quartz lid for processing chamber |
| JP6991474B2 (ja) * | 2017-02-28 | 2022-01-12 | 国立大学法人長岡技術科学大学 | 酸化ケイ素基材上に酸化イットリウム膜が形成された複合材料の製造方法 |
| US11087961B2 (en) * | 2018-03-02 | 2021-08-10 | Lam Research Corporation | Quartz component with protective coating |
| JP7140222B2 (ja) * | 2020-04-30 | 2022-09-21 | Toto株式会社 | 複合構造物および複合構造物を備えた半導体製造装置 |
| TW202302910A (zh) | 2020-04-30 | 2023-01-16 | 日商Ｔｏｔｏ股份有限公司 | 複合結構物及具備複合結構物之半導體製造裝置 |
| JP7115582B2 (ja) * | 2020-04-30 | 2022-08-09 | Toto株式会社 | 複合構造物および複合構造物を備えた半導体製造装置 |
| CN117985949B (zh) * | 2024-04-03 | 2024-06-21 | 苏州高芯众科半导体有限公司 | 一种硅钇铝铬镁氧中间相喷涂粉及其制备方法 |
-
2002
- 2002-03-29 JP JP2002096896A patent/JP3613472B2/ja not_active Expired - Lifetime
-
2003
- 2003-09-16 TW TW092125680A patent/TWI242245B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7914854B2 (en) | 2006-01-18 | 2011-03-29 | Tokyo Ohka Kogyo Co., Ltd. | Film-forming composition |
| TWI714965B (zh) * | 2018-02-15 | 2021-01-01 | 日商京瓷股份有限公司 | 電漿處理裝置用構件及具備其之電漿處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200512826A (en) | 2005-04-01 |
| JP3613472B2 (ja) | 2005-01-26 |
| JP2003297809A (ja) | 2003-10-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |