JP3519888B2 - Copper alloy for electronic equipment and method for producing the same - Google Patents

Copper alloy for electronic equipment and method for producing the same

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Publication number
JP3519888B2
JP3519888B2 JP31352696A JP31352696A JP3519888B2 JP 3519888 B2 JP3519888 B2 JP 3519888B2 JP 31352696 A JP31352696 A JP 31352696A JP 31352696 A JP31352696 A JP 31352696A JP 3519888 B2 JP3519888 B2 JP 3519888B2
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JP
Japan
Prior art keywords
copper alloy
less
content
casting
sec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP31352696A
Other languages
Japanese (ja)
Other versions
JPH09302427A (en
Inventor
立彦 江口
崇夫 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
THE FURUKAW ELECTRIC CO., LTD.
Original Assignee
THE FURUKAW ELECTRIC CO., LTD.
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Application filed by THE FURUKAW ELECTRIC CO., LTD. filed Critical THE FURUKAW ELECTRIC CO., LTD.
Priority to JP31352696A priority Critical patent/JP3519888B2/en
Publication of JPH09302427A publication Critical patent/JPH09302427A/en
Application granted granted Critical
Publication of JP3519888B2 publication Critical patent/JP3519888B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、電気電子機器用の
リード材、端子材、コネクター材、スイッチ材、電極材
等に適した銅合金の製造方法に関し、特にIC等の半導
体素子用のリードフレーム材に好適な電子機器用銅合金
製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a copper alloy suitable for a lead material, a terminal material, a connector material, a switch material, an electrode material, etc. for electric and electronic equipment, and particularly for a semiconductor element such as an IC. Copper alloy for electronic equipment suitable for frame materials
A method for manufacturing.

【0002】[0002]

【従来の技術】従来より、半導体のリードフレーム材や
端子材には、鉄系材料の他、電気伝導性及び熱伝導性に
優れるCu−Sn系、Cu−Fe系等の銅系材料が多く
用いられてきた。ところで、前記リードフレーム材等に
は、電気伝導性や熱伝導性に加えて、Ag等のめっき
性、半田接合性、打抜加工性又はエッチング加工性、表
面平滑性等に優れること、又実用的な価格であることが
求められている。そして、これら要求特性は、近年の半
導体機器の高密度集積化や小型化、或いは高密度実装化
が進むにつれてより厳しくなりつつある。特にリードフ
レーム材にあっては、近年、ピン数の多いリードフレー
ムの需要が増え、それに伴いピン間の間隔が狭くなる傾
向があり、この為打抜加工端面の精密さの向上も望まれ
ている。このような状況の中で、銅合金にはCu−Cr
系、Cu−Cr−Zr系、Cu−Cr−Sn系等の析出
硬化型銅合金が用いられるようになった。前記析出硬化
型銅合金は、Cr又はZrの析出を利用したものであ
り、強度と導電性等が良好にバランスした合金である。
2. Description of the Related Art Conventionally, many semiconductor lead frame materials and terminal materials include copper-based materials such as Cu-Sn system and Cu-Fe system, which are excellent in electric conductivity and thermal conductivity, in addition to iron-based materials. Has been used. By the way, in addition to electrical conductivity and thermal conductivity, the lead frame material and the like are excellent in plating property such as Ag, solder bondability, punching processability or etching processability, surface smoothness, etc. Price is required. Further, these required characteristics are becoming more severe as the recent high density integration and miniaturization of semiconductor devices or high density packaging progress. Particularly in the case of lead frame materials, in recent years, the demand for lead frames with a large number of pins has increased, and as a result, the spacing between pins has tended to become narrower. Therefore, it is desired to improve the precision of punched end faces. There is. Under such a circumstance, Cu-Cr is added to the copper alloy.
System, Cu-Cr-Zr system, Cu-Cr-Sn system and other precipitation hardening copper alloys have come to be used. The precipitation hardening type copper alloy utilizes precipitation of Cr or Zr, and is an alloy in which strength and conductivity are well balanced.

【0003】[0003]

【発明が解決しようとする課題】しかし前記析出硬化型
銅合金には、ピン間等で短絡が起き易い、打抜加工
材の寸法精度が低い、打抜金型の寿命が短い等の問題
があった。この為、本発明者等は、これらの原因につい
て鋭意研究を進めた。そして、前記については加工に
より延ばされた針状や板状析出物、析出物から成長した
ウイスカー、打抜加工時に発生する微小なバリや粉体等
が原因していること、又前記については合金元素の
析出に加え、結晶粒の大きさ、析出物(晶出物)の大き
さ等が原因していることを知見し、更に研究を進めて本
発明を完成させるに到った。本発明の目的は、リード
材、端子材、コネクター材等、特に多ピンリードフレー
ム材に適した電子機器用銅合金及びその製造方法を提供
することにある。
However, the precipitation hardening type copper alloy has problems that short circuits easily occur between pins, the dimensional accuracy of the punching material is low, and the life of the punching die is short. there were. Therefore, the inventors of the present invention conducted extensive research into these causes. And, regarding the above, it is caused by needle-like or plate-like precipitates elongated by processing, whiskers grown from the precipitates, minute burrs or powder generated during punching processing, and the above In addition to the precipitation of alloying elements, the inventors have found that the cause is the size of crystal grains, the size of precipitates (crystallized substances), etc., and have further researched to complete the present invention. It is an object of the present invention to provide a copper alloy for electronic devices, which is suitable for lead materials, terminal materials, connector materials, etc., especially multi-pin lead frame materials, and a method for producing the same.

【0004】[0004]

【0005】[0005]

【0006】[0006]

【0007】本発明の銅合金は、析出硬化型銅合金の合
金元素量、析出物等の大きさ、結晶粒度等を規定するこ
とにより、リードフレーム等のピン間の短絡、及び打抜
加工での寸法精度並びに金型寿命の改善を図ったもので
ある。
The copper alloy of the present invention can be used for short-circuiting between pins such as a lead frame and for punching by defining the alloying element amount of precipitation hardening type copper alloy, the size of precipitates, the grain size and the like. It is intended to improve the dimensional accuracy and mold life.

【0008】[0008]

【課題を解決するための手段】請求項記載の発明は、
Crを0.1〜0.4wt%、Zrを0.2wt%未
満、Snを0.05〜2.0wt%、Znを0.05〜
2.0wt%、Sr、Ba、Biの1種以上を総計で
0.002〜0.2wt%含み、Pを0.01wt%未
満、Sを0.005wt%未満、O2 を0.005wt
%未満とし、残部Cu及び不可避不純物からなる銅合金
に、鋳造加工、熱間加工、冷間加工を施すにあたり、前
記鋳造加工時の冷却速度を5℃/秒以上とし、前記鋳造
加工にて得られる銅合金鋳塊を850〜1000℃に加
熱して熱間加工し、熱間加工後10℃/秒以上の速度で
冷却し、次いで冷間加工を300〜500℃で10分〜
24時間の熱処理を1回以上入れて行うことを特徴とす
前記銅合金に含まれる晶出物又は析出物の大きさが3
μm未満、前記銅合金の結晶粒度が5μm未満である打
抜き性に優れた電子機器用銅合金の製造方法である。
The invention according to claim 1 is
Cr: 0.1-0.4 wt%, Zr: less than 0.2 wt%, Sn: 0.05-2.0 wt%, Zn: 0.05-
2.0 wt%, one or more of Sr, Ba, and Bi are included in a total amount of 0.002 to 0.2 wt%, P is less than 0.01 wt%, S is less than 0.005 wt%, and O 2 is 0.005 wt.
%, And the copper alloy consisting of the balance Cu and unavoidable impurities is subjected to casting, hot working, and cold working at a cooling rate of 5 ° C./sec or more during the casting, and obtained by the casting. The copper alloy ingot is heated to 850 to 1000 ° C., hot worked, cooled at a rate of 10 ° C./sec or more after hot working, and then cold worked at 300 to 500 ° C. for 10 minutes to.
The heat treatment for 24 hours is performed once or more , and the size of the crystallized substance or precipitate contained in the copper alloy is 3 or more.
less than 5 μm, the grain size of the copper alloy is less than 5 μm
It is a method for producing a copper alloy for electronic devices, which has excellent punchability .

【0009】請求項記載の発明は、Crを0.1〜
0.4wt%、Zrを0.2wt%未満、Znを0.0
5〜2wt%、Co、Mg、Mn、Si、Snの1種以
上を総計で0.01〜1wt%含み、更にPb、Biの
1種以上を総計で0.005〜0.1wt%含み、P含
有量を0.01wt%未満、S及びO2 の含有量をそれ
ぞれ0.005wt%未満とし、残部Cu及び不可避不
純物からなる銅合金に、鋳造加工、熱間加工、冷間加工
を施すにあたり、前記鋳造加工時の冷却速度を5℃/秒
以上とし、前記鋳造加工にて得られる銅合金鋳塊を85
0〜1000℃に加熱して熱間加工し、熱間加工後10
℃/秒以上の速度で急冷し、次いで冷間加工および30
0〜500℃で10分〜24時間の熱処理を少なくとも
1回入れることを特徴とする前記銅合金に含まれる晶出
物又は析出物の大きさが3μm未満、前記銅合金の結晶
粒度が5μm未満である打抜き性に優れた電子機器用銅
合金の製造方法である。
According to the second aspect of the invention, the Cr content is 0.1 to 0.1%.
0.4 wt%, Zr less than 0.2 wt%, Zn 0.0
5 to 2 wt%, 0.01 to 1 wt% of Co, Mg, Mn, Si and Sn in total, and 0.005 to 0.1 wt% of Pb and Bi in total. When the P content is less than 0.01 wt% and the contents of S and O 2 are less than 0.005 wt%, respectively, and the copper alloy consisting of the balance Cu and unavoidable impurities is subjected to casting, hot working, and cold working. The cooling rate during the casting is set to 5 ° C./sec or more, and the copper alloy ingot obtained by the casting is 85
Heated to 0-1000 ° C and hot-worked, after hot-working 10
Quenching at a rate of ℃ / sec or more, then cold working and 30
Crystallization contained in the copper alloy, characterized in that heat treatment at 0 to 500 ° C. for 10 minutes to 24 hours is performed at least once.
Or the size of the precipitate is less than 3 μm, the crystal of the copper alloy
It is a method for producing a copper alloy for electronic equipment , which has a grain size of less than 5 μm and is excellent in punchability .

【0010】請求項記載の発明は、Crを0.1〜
0.4wt%、Zrを0.2wt%未満、Znを0.0
5〜2wt%、Co、Mg、Mn、Si、Snの1種以
上を総計で0.01〜1wt%含み、更にPb、Biの
1種以上を総計で0.005〜0.1wt%、Ca、S
r、Ba、Teの1種以上を総計で0.005〜0.2
wt%含み(但しPbとCaの共存を除く)、更にP含
有量を0.01wt%未満、S及びO2 の含有量をそれ
ぞれ0.005wt%未満とし、残部Cu及び不可避不
純物からなる銅合金に、鋳造加工、熱間加工、冷間加工
を施すにあたり、前記鋳造加工時の冷却速度を5℃/秒
以上とし、前記鋳造加工にて得られる銅合金鋳塊を85
0〜1000℃に加熱して熱間加工し、熱間加工後10
℃/秒以上の速度で急冷し、次いで冷間加工および30
0〜500℃で10分〜24時間の熱処理を少なくとも
1回入れることを特徴とする前記銅合金に含まれる晶出
物又は析出物の大きさが3μm未満、前記銅合金の結晶
粒度が5μm未満である打抜き性に優れた電子機器用銅
合金の製造方法である。
According to the third aspect of the present invention, Cr is 0.1 to 0.1%.
0.4 wt%, Zr less than 0.2 wt%, Zn 0.0
5-2 wt%, 0.01 to 1 wt% in total of one or more of Co, Mg, Mn, Si and Sn, and 0.005 to 0.1 wt% in total of one or more of Pb and Bi, Ca , S
Total of one or more of r, Ba and Te is 0.005-0.2
A copper alloy containing wt% (excluding coexistence of Pb and Ca), further having a P content of less than 0.01 wt%, a content of S and O 2 of less than 0.005 wt%, and a balance of Cu and inevitable impurities. In performing casting, hot working, and cold working, the cooling rate during the casting was set to 5 ° C./sec or more, and the copper alloy ingot obtained by the casting was 85
Heated to 0-1000 ° C and hot-worked, after hot-working 10
Quenching at a rate of ℃ / sec or more, then cold working and 30
Crystallization contained in the copper alloy, characterized in that heat treatment at 0 to 500 ° C. for 10 minutes to 24 hours is performed at least once.
Or the size of the precipitate is less than 3 μm, the crystal of the copper alloy
It is a method for producing a copper alloy for electronic equipment , which has a grain size of less than 5 μm and is excellent in punchability .

【0011】[0011]

【発明の実施の形態】本発明の銅合金において、Crは
銅中に析出し、銅の導電率をあまり低下させずに強度を
向上させる。その含有量を0.01〜0.4wt%に限定した理由
は、0.01wt%未満では十分な強度や耐熱性が得られず、
0.4wt%を超えると強度の向上が飽和する上、晶出物や析
出物が大きくなり、これらがリードフレーム端面から突
出して隣接するピン間又はリード間等での短絡を引き起
こす為である。ZrはCrと同様に銅中に析出し、銅の
導電率をあまり低下させずに強度を向上させる。その含
有量を0.2wt%未満に限定した理由は、0.2wt%以上では強
度の向上が飽和する上、析出物が粗大化し、Crと同様
にリードフレームの短絡現象の原因になる為である。S
nは強度向上に寄与する。その含有量を0.05〜2wt%に限
定した理由は、0.05wt% 未満ではその効果が十分に得ら
れず、2wt%を超えると銅中のCrやZrの固溶量を低下
させ、又CrやZrを含む晶出物や析出物のサイズが大
きくなり、短絡の原因になると共に、導電率の低下を招
く為である。Znは半田付性と半田めっき性の改善、つ
まり半田層の剥離防止に寄与する。その含有量を0.05〜
2wt%に限定した理由は、0.05wt% 未満ではその効果が十
分に得られず、2wt%を超えては半田付性が却って低下す
るようになる為である。
BEST MODE FOR CARRYING OUT THE INVENTION In the copper alloy of the present invention, Cr precipitates in copper and improves the strength without significantly lowering the conductivity of copper. The reason for limiting the content to 0.01 to 0.4 wt% is that if it is less than 0.01 wt%, sufficient strength and heat resistance cannot be obtained,
This is because if it exceeds 0.4 wt%, the improvement in strength is saturated and crystallized substances or precipitates become large, and these protrude from the end face of the lead frame and cause short circuits between adjacent pins or between leads. Like Cr, Zr is precipitated in copper and improves the strength of copper without significantly reducing the conductivity of copper. The reason for limiting the content to less than 0.2 wt% is that if the content is 0.2 wt% or more, the improvement in strength is saturated, and the precipitates become coarse, which causes a short circuit phenomenon of the lead frame, similar to Cr. S
n contributes to the improvement of strength. The reason for limiting the content to 0.05 to 2 wt% is that the effect is not sufficiently obtained if it is less than 0.05 wt%, and if it exceeds 2 wt%, the solid solution amount of Cr and Zr in copper is lowered, and This is because the size of crystallized substances and precipitates containing Zr becomes large, which causes a short circuit and causes a decrease in conductivity. Zn contributes to improvement of solderability and solder plating property, that is, prevention of peeling of the solder layer. Its content is 0.05 ~
The reason for limiting the content to 2 wt% is that if it is less than 0.05 wt%, the effect cannot be sufficiently obtained, and if it exceeds 2 wt%, the solderability is rather deteriorated.

【0012】請求項1記載の発明において、Sr、B
a、及びBiは打抜加工性を向上させる。ここで打抜加
工性は、打抜端面の寸法形状、バリの発生具合、
打抜金型の寿命等で評価される。前記Sr、Ba、又は
Biの1種以上の総含有量を 0.002〜0.2wt%に限定した
理由は、0.002wt%未満ではその効果が十分に得られず、
0.2wt%を超えると圧延加工時に割れ等が発生する為であ
る。
In the invention according to claim 1, Sr, B
a and Bi improve punching workability. The punching workability here means the dimension and shape of the punching end surface, the degree of burr generation,
It is evaluated by the life of the punching die. The reason why the total content of one or more of Sr, Ba, or Bi is limited to 0.002 to 0.2 wt% is that the effect is not sufficiently obtained if it is less than 0.002 wt%,
This is because if it exceeds 0.2 wt%, cracks or the like will occur during rolling.

【0013】請求項2記載の発明において、Co、M
g、Mn、Si、Snは、Cr又はCrとZrの均一微
細な析出を促進すると共に、強度向上にも寄与する。そ
の含有量を総計で0.01〜1wt%に限定した理由は、0.01wt
% 未満ではその効果が十分に得られず、1wt%を超えると
銅中のCrやZrの固溶量を低下させ、CrやZrを含
む析出物のサイズが大きくなり、短絡の原因となると共
に、導電率の低下を招く為である。Pb、Biの1種以
上が含有されると打抜加工性が向上する。ここで打抜加
工性は、前述の通り、打抜端面の寸法形状、バリの
発生具合、打抜金型の寿命等で評価される。Pb、B
iは単体でCuマトリックス中に分散し、、の改善
に寄与するが、特にの改善効果が顕著である。前記P
b、Biの1種以上の総含有量を0.005 〜0.1wt%に限定
した理由は、0.002wt%未満ではその効果が十分に得られ
ず、0.1wt%を超えると圧延加工時に割れ等の欠陥が発生
し生産性が低下する為である。
In the invention according to claim 2, Co, M
g, Mn, Si, and Sn promote uniform and fine precipitation of Cr or Cr and Zr, and also contribute to strength improvement. The reason for limiting the total content to 0.01-1 wt% is 0.01 wt
If it is less than%, the effect cannot be sufficiently obtained, and if it exceeds 1 wt%, the solid solution amount of Cr and Zr in copper is reduced, and the size of precipitates containing Cr and Zr becomes large, which causes a short circuit. This is because the conductivity is lowered. If one or more of Pb and Bi are contained, punching workability is improved. Here, the punching workability is evaluated by the dimension and shape of the punching end surface, the degree of burr generation, the life of the punching die, etc., as described above. Pb, B
Although i alone disperses in the Cu matrix and contributes to the improvement of i, the improvement effect is particularly remarkable. The P
The reason why the total content of at least one of b and Bi is limited to 0.005 to 0.1 wt% is that the effect is not sufficiently obtained if it is less than 0.002 wt%, and if it exceeds 0.1 wt%, defects such as cracks are generated during rolling. This is due to the decrease in productivity.

【0014】請求項3記載の発明において、Co、M
g、Mn、Si、Snの作用、及びその含有量の限定理
由は、請求項2の発明の場合と同じである。この発明
は、Pb、Biの1種以上に、Ca、Sr、Ba、Te
の1種以上を更に含有させて打抜加工性を一段と向上さ
せたものである。ここで打抜加工性は打抜端面の寸法
形状、バリの発生具合、打抜金型の寿命等で評価さ
れ、Pb、Biは単体でCuマトリックス中に分散し、
、の改善に寄与するが、特にの改善効果が顕著な
ことは前述の通りである。ここで新たに含有されるC
a、Sr、Ba、Teは、Cuとの金属間化合物を形成
し、それがCuマトリックス中に分散するため、、
の改善に寄与する。Pb、Biの1種以上と、Ca、S
r、Ba、Teの1種以上を適正量添加することで各種
のプレス性が改善される。但しPbとCaが共存すると
その効果が十分得られなくなる。前記Pb、Biの1種
以上の総含有量を 0.005〜0.1wt%に限定した理由は前述
の通りである。Ca、Sr、Ba、Teの1種以上の総
含有量を 0.005〜0.2wt%に限定した理由は、0.005wt%未
満ではその効果が十分に得られず、0.2wt%を超えると圧
延加工時に割れ等が発生し生産性が低下する為である。
In the invention according to claim 3, Co, M
The action of g, Mn, Si, and Sn and the reason for limiting the content are the same as in the case of the invention of claim 2. The present invention provides one or more of Pb and Bi with Ca, Sr, Ba and Te.
Further, at least one of the above is further contained to further improve the punching workability. Here, the punching workability is evaluated by the size and shape of the punching end surface, the degree of burr generation, the life of the punching die, etc., and Pb and Bi are dispersed alone in the Cu matrix,
As described above, the effect of improvement is particularly remarkable. C newly contained here
a, Sr, Ba, Te form an intermetallic compound with Cu, which is dispersed in the Cu matrix,
Contribute to the improvement of. One or more of Pb and Bi, and Ca and S
Various pressability is improved by adding an appropriate amount of one or more of r, Ba and Te. However, if Pb and Ca coexist, the effect cannot be sufficiently obtained. The reason why the total content of at least one of Pb and Bi is limited to 0.005 to 0.1 wt% is as described above. The reason why the total content of at least one of Ca, Sr, Ba and Te is limited to 0.005 to 0.2 wt% is that the effect is not sufficiently obtained if it is less than 0.005 wt%, and if it exceeds 0.2 wt% during rolling. This is because cracks and the like occur and productivity decreases.

【0015】本発明では、前記合金元素の他、通常の工
業用銅材料に微量含まれるP、S、O2 等の量も規定す
る。Pはその含有量を0.01wt% 未満に規定することで、
本発明合金におけるCr−P系等の晶出物の粗大化が抑
制されピン間等の短絡が防止される。特にPの含有量は
0.005wt%未満が望ましい。Sはその含有量を0.005wt%未
満に規定することで、Cr−S系、Zr−S系等の晶出
物の粗大化が抑制されピン間等の短絡が防止される。又
熱間加工性が向上する。特にSの含有量は0.002wt%未満
が望ましい。O2 は、その含有量が0.005wt%以上ではC
rやZrが酸化されて、析出硬化が十分に得られない
上、半田付性が低下する。特にO2 の含有量は0.002wt%
未満が望ましい。前述のように、P、S、O2 は、その
含有量を適切に規定することにより、CrやZrを含む
析出硬化型銅合金のリードフレーム材等としての特性を
大幅に改善し得るものである。このことは、本発明者等
が初めて見出したことである。
In the present invention, in addition to the above-mentioned alloying elements, the amounts of P, S, O 2 etc. contained in trace amounts in ordinary industrial copper materials are also defined. By defining the content of P to be less than 0.01 wt%,
In the alloy of the present invention, coarsening of crystallized substances such as Cr-P system is suppressed and short circuit between pins is prevented. Especially the content of P
Less than 0.005 wt% is desirable. By defining the content of S to be less than 0.005 wt%, coarsening of crystallized substances such as Cr—S type and Zr—S type is suppressed and short circuit between pins is prevented. Further, hot workability is improved. Particularly, the S content is preferably less than 0.002 wt%. O 2 is C when its content is 0.005 wt% or more.
R and Zr are oxidized, precipitation hardening cannot be sufficiently obtained, and solderability is deteriorated. Especially the content of O 2 is 0.002wt%
Less than is desirable. As described above, P, S, and O 2 can significantly improve the properties of a precipitation hardening copper alloy containing Cr or Zr as a lead frame material, etc., by properly defining the contents. is there. This is the first finding of the present inventors.

【0016】本発明で、銅合金中に含まれる晶出物又は
析出物の大きさを3μm未満に規定した理由は、晶出物
又は析出物の大きさが3μm以上では、前記晶出物又は
析出物は圧延加工中に針状化又は板状化されてリードの
端部から突出し、隣接するリードフレームのピン間やリ
ード間で短絡が起き易くなる為である。
In the present invention, the size of the crystallized substances or precipitates contained in the copper alloy is defined to be less than 3 μm, because the crystallized substances or the precipitates have a size of 3 μm or more. This is because the precipitate is formed into a needle shape or a plate shape during the rolling process and protrudes from the end portion of the lead, and a short circuit easily occurs between pins of the lead frame and between the leads.

【0017】請求項1記載の発明で、銅合金の結晶粒度
を5μm未満に規定した理由は、前記結晶粒度が5μm
以上ではSr、Ba、又はBiの打抜加工性の改善効果
が十分に得られない為である。又前記結晶粒度が5μm
未満だとエッチング加工面が平滑になりめっき性が向上
する利点がある。
In the invention of claim 1, the reason why the grain size of the copper alloy is specified to be less than 5 μm is that the grain size is 5 μm.
This is because the above-described effect of improving the punching workability of Sr, Ba, or Bi cannot be sufficiently obtained. The crystal grain size is 5 μm
If it is less than the above range, there is an advantage that the etched surface becomes smooth and the plating property is improved.

【0018】請求項2記載の発明で、銅合金の結晶粒度
を5μm未満に限定した理由は、5μm以上では、P
b、Biの1種以上を含有させて得られる打抜加工性の
改善効果が十分に得られない為である。また、結晶粒度
を5μm未満にすることによる効果は前述の通りであ
る。
In the invention of claim 2, the reason why the grain size of the copper alloy is limited to less than 5 μm is that P is 5 μm or more.
This is because the punching workability improving effect obtained by containing at least one of b and Bi cannot be sufficiently obtained. Further, the effect of setting the crystal grain size to less than 5 μm is as described above.

【0019】請求項3記載の発明で、銅合金の結晶粒度
を5μm未満に限定した理由は、5μm以上では、P
b、Biの1種以上、及びCa、Sr、Ba、Teの1
種以上を含有させて(但しPbとCaの共存を除く)得
られる打抜加工性の改善効果が十分に得られない為であ
る。また、結晶粒度を5μm未満にすることによる効果
は前述の通りである。
In the invention of claim 3, the reason why the grain size of the copper alloy is limited to less than 5 μm is that P is 5 μm or more.
b, one or more of Bi, and 1 of Ca, Sr, Ba, Te
This is because the effect of improving the punching workability obtained by containing at least one species (excluding the coexistence of Pb and Ca) cannot be sufficiently obtained. Further, the effect of setting the crystal grain size to less than 5 μm is as described above.

【0020】前記本発明の析出硬化型銅合金は、鋳造加
工、熱間加工、冷間加工が施されて所定形状に加工され
る。請求項1、2、3記載の発明で、前記鋳造加工時の
冷却速度を5℃/秒以上にする理由は、冷却速度が5℃
/秒未満では3μmを超える大きな晶出物(Cr、Cu
−Zr系等の種々の晶出物)が生成する為である。前記
鋳造加工にて得られる銅合金鋳塊の熱間加工温度を85
0〜1000℃に規定した理由は、850℃未満ではC
rやZrの晶出物や析出物が大きくなって、最終的に本
発明の条件を満たさなくなり、1000℃を超えると酸
化被膜が厚くなり生産性を害する上、エネルギーコスト
の増大をもたらす為である。前記熱間加工後の冷却を1
0℃/秒以上の速度で行う理由は、前記冷却速度が10
℃/秒未満ではCrやZr等の晶出物や析出物が3μm
を超える大きさに成長する為である。前記冷間加工する
際の熱処理を300〜500℃で10分〜24時間の条
件に規定する理由は、前記熱処理温度が300℃未満又
は10分未満では、銅合金中に固溶したCr、Zrの微
細な析出が不十分となり、リードフレーム材等としての
特性のバランスが崩れる為である。又500℃を超える
と、結晶粒度が大きくなって打抜加工性が低下し、又2
4時間を超えると、その効果が飽和し不経済な為であ
る。又、上述の熱処理を入れての冷間加工後に、更に仕
上冷間加工とやや低温(200〜400℃)での熱処理
を施すと、曲げ加工性や異方性が改善され、又内部応力
が除去される。前記低温熱処理は、還元性雰囲気か不活
性雰囲気で行うのが望ましく、その熱処理方法はバッチ
式でもテンションアニーリング等の走間式でも良い。必
要に応じて熱処理前後にテンションレベラーやローラー
レベラー等の矯正を行っても良い。
The precipitation hardening type copper alloy of the present invention is cast, hot worked and cold worked into a predetermined shape. In the inventions according to claims 1, 2, and 3 , the reason why the cooling rate during the casting process is 5 ° C / sec or more is that the cooling rate is 5 ° C.
If it is less than / sec, large crystallized substances exceeding 3 μm (Cr, Cu
This is because various crystallized substances such as -Zr type) are generated. The hot working temperature of the copper alloy ingot obtained by the casting is 85
The reason for defining 0 to 1000 ° C. is C below 850 ° C.
This is because the crystallized substances and precipitates of r and Zr become large and eventually the conditions of the present invention are not satisfied, and when the temperature exceeds 1000 ° C., the oxide film becomes thick and the productivity is impaired and the energy cost is increased. is there. Cooling after the hot working is 1
The reason why the cooling rate is 0 ° C./sec or more is that the cooling rate is 10
If the temperature is less than ℃ / sec, the crystallized substances and precipitates such as Cr and Zr are 3 μm
This is because it grows to a size exceeding. The reason for prescribing the heat treatment at the time of cold working to the condition of 300 to 500 ° C. for 10 minutes to 24 hours is that when the heat treatment temperature is less than 300 ° C. or less than 10 minutes, Cr and Zr dissolved in the copper alloy are dissolved. This is because the fine precipitation of is insufficient and the balance of properties as a lead frame material or the like is lost. If the temperature exceeds 500 ° C, the grain size becomes large and the punching workability deteriorates.
This is because the effect is saturated and it is uneconomical when it exceeds 4 hours. In addition, after the cold working with the above-mentioned heat treatment, if the finish cold working and the heat treatment at a slightly low temperature (200 to 400 ° C.) are performed, bending workability and anisotropy are improved, and internal stress is reduced. To be removed. The low temperature heat treatment is preferably performed in a reducing atmosphere or an inert atmosphere, and the heat treatment method may be a batch type or a running type such as tension annealing. If necessary, straightening such as a tension leveler or a roller leveler may be performed before and after the heat treatment.

【0021】[0021]

【実施例】以下に本発明を実施例により詳細に説明す
る。 (実施例1)表1に示す組成の合金を高周波溶解炉にて
溶解し、これを6℃/秒の冷却速度で、厚さ30mm、幅 1
00mm、長さ 150mmの鋳塊に鋳造した。次にこの鋳塊を 9
80℃で熱間圧延し、その後直ちに30℃/秒の速度で急冷
した。この熱延材の両面を各9mm面削して酸化被膜を除
去した後、厚さ0.33mmに冷間圧延した。次いで不活性雰
囲気中で 420℃で2時間熱処理し、更に仕上冷間圧延し
て厚さ 0.2mmの板材とし、これを不活性雰囲気中で 350
℃で2時間熱処理した。
EXAMPLES The present invention will be described in detail below with reference to examples. (Example 1) An alloy having the composition shown in Table 1 was melted in a high frequency melting furnace, and this was cooled at a cooling rate of 6 ° C / second to a thickness of 30 mm and a width of 1 mm.
It was cast into an ingot with a length of 00 mm and a length of 150 mm. Next, ingot 9
It was hot-rolled at 80 ° C and then immediately quenched at a rate of 30 ° C / sec. Both surfaces of this hot rolled material were chamfered by 9 mm to remove the oxide film, and then cold rolled to a thickness of 0.33 mm. Then heat-treat at 420 ℃ for 2 hours in an inert atmosphere, and further finish cold-rolling to a plate with a thickness of 0.2 mm.
It heat-processed at 2 degreeC for 2 hours.

【0022】このようにして得られた各々の板材につい
てリードフレームに要求される種々の特性を下記〜
の方法により調べた。結果を表2に示す。 晶出物、析出物、結晶粒の大きさ:顕微鏡観察(200
倍) により測定した。 引張強度:JISZ2241に準じて測定した。 導電率:JISH0505に準じて測定した。 エッチング加工面の突起物有無:圧延方向に対して垂
直方向に幅 0.5mmの試験片をエッチング加工により切出
し、エッチング加工面を顕微鏡観察(50倍) した。エッ
チング液には塩化第2鉄溶液を用いた。 半田濡れ性:10mm×50mmの試験片をロジン系(RMA) の
フラックスに5秒間浸漬後、 230℃の共晶半田(Pb-6
3wt%Sn)浴中に5秒間浸漬し、半田の濡れ具合を目視
観察した。濡れ面積が90%以上は良好、90%未満は不良
と判定した。 半田密着性:と同様に半田を付着させた試験片を大
気中で 150℃で1000時間加熱し、次いで 180度の密着曲
げと曲げ戻しを行ったのち、半田密着性を目視観察し
た。 打抜き性:SKD11製金型で1mm×5mmの角穴を開
け、5001回目から10000回目までの打抜き分から20個の
サンプルを無作為に抽出し、これらサンプルのバリの大
きさ(高さI)を測定した。又打抜き面を観察して破断
部の厚さaを計測し、試験片の厚さbに対する破断部割
合 (a/b)×100%を求めた。この割合は打抜き性の目安の
1つとされ、この値が大きい程、打抜き性は良好である
と言われ、歩留りが向上し精密な加工が行えると評価さ
れる。
The various characteristics required of the lead frame for each of the plate materials thus obtained are described below.
It investigated by the method of. The results are shown in Table 2. Crystallized substances, precipitates, crystal grain size: Microscopic observation (200
Times). Tensile strength: Measured according to JIS Z2241. Conductivity: Measured according to JIS H0505. Presence or absence of protrusions on the etched surface: A test piece with a width of 0.5 mm was cut out by etching in the direction perpendicular to the rolling direction, and the etched surface was observed under a microscope (50 times). A ferric chloride solution was used as the etching solution. Solder wettability: A test piece of 10 mm x 50 mm was dipped in a rosin-based (RMA) flux for 5 seconds, and then eutectic solder (Pb-6
It was immersed in a 3 wt% Sn) bath for 5 seconds, and the wet condition of the solder was visually observed. A wet area of 90% or more was judged as good, and a wet area of less than 90% was judged as poor. Solder adhesion: The test piece to which the solder was adhered was heated in the atmosphere at 150 ° C. for 1000 hours in the same manner as in (1) and then subjected to 180 degree contact bending and bending back, and then the solder adhesion was visually observed. Punching performance: A 1 mm x 5 mm square hole was opened with a SKD11 die, and 20 samples were randomly extracted from the punching times from the 5001st to 10,000th times, and the size (height I) of the burr of these samples was determined. It was measured. Further, the punched surface was observed to measure the thickness a of the fractured portion, and the ratio of the fractured portion (a / b) × 100% to the thickness b of the test piece was determined. This ratio is considered as one of the criteria of punching property. The larger this value is, the better the punching property is, and it is evaluated that the yield is improved and the precise processing can be performed.

【0023】[0023]

【表1】 [Table 1]

【0024】[0024]

【表2】 [Table 2]

【0025】表2より明らかなように、本発明例のNo.1
〜13は何れも優れた特性を示した。これに対し、比較例
のNo.14,17は共に強度が低かった。これは前者はCr量
が、後者はSn量がそれぞれ少ない為である。No.15,16
はエッチング加工面に突起物が認められた。これはCr
又はZr量が多い為である。これら突起物は短絡の原因
となりリードフレーム材として不適当である。No.18 は
Sn量が多い為、強度は高いが導電率が低かった。又エ
ッチング加工面に短絡の原因となる突起物が認められ
た。No.19 はZnが少ない為半田剥離が認められた。N
o.20 はZnが多い為半田濡れ性が低下した。No.21 は
打抜き試験でバリが大きく出た。これはSrとBiの総
量が少ない為である。又打抜き面における破断面の割合
も小さく、あまり精密な成形ができないものであった。
No.22 はSr、Ba、及びBiの総量が多い為熱間圧延
中に割れが生じた。No.23,24はP又はSが多い為、晶出
物が粗大化し、エッチング加工面に突起物が残った。N
o.25 はO2 が多い為十分な析出硬化が得られず強度が
低下した。又半田濡れ性にも劣った。
As is clear from Table 2, No. 1 of the invention example
All of ~ 13 exhibited excellent characteristics. On the other hand, Comparative Examples Nos. 14 and 17 both had low strength. This is because the former has a smaller amount of Cr and the latter has a smaller amount of Sn. No.15,16
A protrusion was observed on the etched surface. This is Cr
Alternatively, the amount of Zr is large. These protrusions cause a short circuit and are unsuitable as a lead frame material. Since No. 18 had a large amount of Sn, it had high strength but low conductivity. In addition, a protrusion that causes a short circuit was recognized on the etched surface. No. 19 had a small amount of Zn, and therefore solder peeling was observed. N
In o.20, the solder wettability deteriorated due to the large amount of Zn. No. 21 had a large burr in the punching test. This is because the total amount of Sr and Bi is small. Further, the ratio of the fractured surface to the punched surface was small, and it was impossible to perform very precise molding.
Since No. 22 had a large total amount of Sr, Ba, and Bi, cracking occurred during hot rolling. Nos. 23 and 24 contained a large amount of P or S, and thus the crystallized substances were coarsened and the protrusions remained on the etched surface. N
O.25 had a large amount of O 2 and thus sufficient precipitation hardening was not obtained and the strength decreased. It was also inferior in solder wettability.

【0026】(実施例2)表1に示す本発明合金のNo.
3,6,9,13 に、表3に示す条件にて鋳造、熱間圧延、冷
却、熱処理、冷間圧延を施し、得られた板材について、
実施例1と同じ方法により特性を調べた。結果を表4に
示す。尚、表1,2 に示したNo.3,6,9,13 は再掲した。
(Example 2) Nos. Of alloys of the present invention shown in Table 1
Casting, hot rolling, cooling, heat treatment, and cold rolling on 3,6,9,13 under the conditions shown in Table 3
The characteristics were examined by the same method as in Example 1. The results are shown in Table 4. Note that Nos. 3, 6, 9, and 13 shown in Tables 1 and 2 are reprinted.

【0027】[0027]

【表3】 [Table 3]

【0028】[0028]

【表4】 [Table 4]

【0029】表4より明らかなように、本発明例の No.
31〜36はいずれも優れた特性を示している。これに対
し、比較例のNo.41,48は鋳造時の冷却速度が遅かった
為、No.42 は熱間加工温度が低かった為、 No.43は熱間
加工後の冷却速度が遅かった為、いずれも晶出物や析出
物が粗大化し、これが熱間加工や冷間加工で針状化又は
板状化してエッチング加工面に突起物として残った。N
o.42,43は引張強度も低下した。No.44,47,49 は冷間加
工の際の熱処理温度が高かった為結晶粒度が大きくな
り、本発明例のNo.3,9,13 と比較して強度が低下し、バ
リが大きくなり、又破断部割合(精密加工性)が低下し
た。No.45 は熱間加工温度が1000℃を超えた為圧延材に
厚い酸化膜が形成された。No.45 の特性は本発明例のN
o.3と同等であり、1000℃を超える温度で熱間加工する
ことはエネルギーコストの上昇を招くだけで意味がない
ことが判る。No.46 は冷間加工後の焼鈍温度が低かった
為、強度と導電率が共に低下した。
As is clear from Table 4, No.
All of 31 to 36 show excellent characteristics. On the other hand, in Comparative Examples No. 41 and 48, the cooling rate during casting was slow, No. 42 had a low hot working temperature, and No. 43 had a slow cooling rate after hot working. Therefore, in both cases, crystallized substances and precipitates became coarse, and these were made acicular or plate-like by hot working or cold working and remained as projections on the etched surface. N
The tensile strength of o.42 and 43 also decreased. No.44,47,49 had a high grain size because the heat treatment temperature during cold working was high, resulting in lower strength and larger burrs than No.3,9,13 of the present invention. In addition, the ratio of fractured parts (precision workability) decreased. In No. 45, the hot working temperature exceeded 1000 ° C, so a thick oxide film was formed on the rolled material. The characteristics of No. 45 are N of the invention example.
It is equivalent to o.3, and it turns out that hot working at a temperature over 1000 ° C only increases the energy cost and is meaningless. In No. 46, the annealing temperature after cold working was low, so both strength and conductivity decreased.

【0030】(実施例3)表5に示す組成の合金を高周
波溶解炉にて溶解し、これを6℃/秒の冷却速度で、厚
さ30mm、幅100mm 、長さ150mm の鋳塊に鋳造した。次に
この鋳塊を 980℃で熱間圧延し、その後直ちに30℃/秒
の速度で急冷した。この熱延材の表面酸化被膜を除去す
るため厚さ9mmまで面削してから、厚さ0.33mmに冷間圧
延した。次いで、不活性雰囲気中で 440℃×2時間熱処
理し、更に仕上げ冷間圧延して厚さ0.2mm の板材とし、
これを不活性雰囲気中で 350℃で2時間熱処理した。こ
のようにして得られた各々の板材についてリードフレー
ムに要求される種々の特性(〜)を実施例1と同じ
方法により調べた。更にで打抜加工性を調べた金型を
再研磨したのち、再び打抜を行い、 50001回目から 550
00回目までの打抜き分から20個のサンプルを無作為に抽
出し、バリの大きさ(高さII)を測定した。このバリは
金型摩耗が激しい程大きくなり、金型寿命の指標とな
る。結果を表6に示す。なお、表5においてCo、M
g、Mn、Si、Snを第一群添加元素(一群元素)、
Pb、Biを第二群添加元素(二群元素)、Ca、S
r、Ba、Teを第三群添加元素(三群元素)とする。
Example 3 An alloy having the composition shown in Table 5 was melted in a high frequency melting furnace and cast into a ingot having a thickness of 30 mm, a width of 100 mm and a length of 150 mm at a cooling rate of 6 ° C./sec. did. Next, this ingot was hot-rolled at 980 ° C. and immediately thereafter rapidly cooled at a rate of 30 ° C./sec. In order to remove the oxide film on the surface of this hot rolled material, it was chamfered to a thickness of 9 mm and then cold rolled to a thickness of 0.33 mm. Next, heat-treat at 440 ℃ for 2 hours in an inert atmosphere, and further finish cold-rolling to a plate with a thickness of 0.2 mm.
This was heat-treated at 350 ° C. for 2 hours in an inert atmosphere. With respect to the respective plate materials thus obtained, various characteristics (-) required for the lead frame were examined by the same method as in Example 1. Furthermore, after re-polishing the die for which the punching workability was investigated, punching was performed again,
Twenty samples were randomly extracted from the punching up to the 00th time, and the size (height II) of the burr was measured. This burr becomes larger as the die wear becomes more severe and becomes an index of die life. The results are shown in Table 6. In Table 5, Co, M
g, Mn, Si, Sn as the first group additive element (first group element),
Pb, Bi as the second group additive element (second group element), Ca, S
r, Ba, and Te are the third group additive elements (third group elements).

【0031】[0031]

【表5】 [Table 5]

【0032】[0032]

【表6】 [Table 6]

【0033】表6より明らかなように、本発明例の No.
51〜62はいずれも優れた特性を示した。これに対し比較
例のNo.63,66は共に強度が低かった。これは、前者はC
r量、後者は第一群添加元素量がそれぞれ少ないためで
ある。No.64,65はエッチング加工面に突起物が認められ
た。これは、Cr又はZr量が多い為である。これら突
起物は短絡の原因となり、リードフレーム材として不適
当である。No.67 は、第一群添加元素量が多い為、強度
は高いが導電率が低かった。又、エッチング加工面に短
絡の原因となる突起物が認められた。No.68 は、Znが
少ない為、半田剥離が認められた。No.69 は、Znが多
い為、半田濡れ性が低下した。。No.70 は、打抜試験で
打抜面での破断面の割合が小さく、バリが大きく発生し
た。又、金型寿命試験でのバリも大きかった。これは、
第二、第三群添加元素量が少ないためである。No.71,72
は、Pb、Bi、Ca、Sr、Ba、Te等の総量が多
い為、熱間圧延中に割れが生じた。No.73,74は、P又は
S量が多い為、晶出物が粗大化し、エッチング加工面に
突起物が認められた。更にNo.73 はPbとCaが共存し
ているため、打抜性(バリ高さI、II、破断部割合)向
上効果が十分に得られない。No.75 は、O2 量が多い
為、十分な析出硬化が得られず強度が低下した。又、半
田濡れ性も劣った。
As is clear from Table 6, No.
All of 51 to 62 showed excellent characteristics. In contrast, Comparative Examples Nos. 63 and 66 had low strength. The former is C
The amount of r and the latter are because the amounts of the first group additive elements are small. Nos. 64 and 65 had protrusions on the etched surface. This is because the amount of Cr or Zr is large. These protrusions cause a short circuit and are unsuitable as a lead frame material. In No. 67, the electrical conductivity was low although the strength was high due to the large amount of elements added in the first group. In addition, a protrusion that causes a short circuit was recognized on the etched surface. In No. 68, the amount of Zn was small, and therefore solder peeling was observed. No. 69 had a large amount of Zn, so the solder wettability deteriorated. . In No. 70, the ratio of the fracture surface on the punching surface was small and the burr was large in the punching test. Also, the burrs in the die life test were large. this is,
This is because the amount of the second and third group additive elements is small. No.71,72
Has a large total amount of Pb, Bi, Ca, Sr, Ba, Te, etc., so that cracking occurred during hot rolling. In Nos. 73 and 74, since the amount of P or S was large, the crystallized substances were coarsened and protrusions were recognized on the etched surface. Further, in No. 73, since Pb and Ca coexist, the effect of improving punchability (burr height I, II, fracture ratio) cannot be sufficiently obtained. In No. 75, the amount of O 2 was large, so that sufficient precipitation hardening could not be obtained and the strength decreased. Also, the solder wettability was poor.

【0034】(実施例4)表5に示す本発明合金No.53,
58,60,62を用いて、表7に記す条件にて鋳造、熱間圧
延、冷却、熱処理、冷間圧延を施し、得られた板材につ
いて、実施例1と同じ方法により特性を調べた。結果を
表8に示す。なお、表5、6に示した本発明例No.53,5
8,60,62を再掲した。
Example 4 Alloy No. 53 of the present invention shown in Table 5
Using 58, 60 and 62, casting, hot rolling, cooling, heat treatment and cold rolling were performed under the conditions shown in Table 7, and the properties of the obtained plate material were examined by the same method as in Example 1. The results are shown in Table 8. Inventive Example Nos. 53 and 5 shown in Tables 5 and 6
Re-posted 8,60,62.

【0035】[0035]

【表7】 [Table 7]

【0036】[0036]

【表8】 [Table 8]

【0037】表8より明らかなように、本発明例の No.
81〜86はいずれも優れた特性を示している。これに対
し、比較例のNo.87,94は鋳造時の冷却速度が遅かった
為、 No.88は熱間加工温度が低かった為、 No.89は熱間
加工後の冷却速度が遅かった為、いずれも晶出物や析出
物が粗大化し、これが熱間加工や冷間加工で針状化又は
板状化してエッチング加工面に突起物が発生した。No.8
8,89は引張強度も低下した。No.90,93,95 は冷間加工の
際の熱処理温度が高かった為、結晶粒度が大きくなり、
本発明例のNo.53,60,62 と比較して引張り強度が低下
し、バリが大きく、又破断部割合、金型寿命試験後のバ
リも大きく増加した。No.91 は熱間加工温度が1000℃を
超えた為、圧延材に厚い酸化被膜が形成された。No.91
の特性は本発明例のNo.53 と同等であり、1000℃を超え
る温度で熱間加工することはエネルギーコストの上昇を
招くだけで意味がないことが判る。No.92 は熱間加工後
の焼鈍温度が低かった為、引張り強度と導電率が共に低
下した。
As is clear from Table 8, No.
All of 81 to 86 show excellent characteristics. On the other hand, in Comparative Examples No. 87 and 94, the cooling rate during casting was slow, No. 88 had a low hot working temperature, and No. 89 had a slow cooling rate after hot working. Therefore, in both cases, crystallized substances and precipitates were coarsened, which became needle-like or plate-like during hot working or cold working, resulting in protrusions on the etched surface. No.8
The tensile strength of 8,89 also decreased. No. 90, 93, 95 had a high heat treatment temperature during cold working, so the grain size increased,
Compared with No. 53, 60, 62 of the present invention example, the tensile strength decreased, the burr was large, and the fracture ratio and the burr after the die life test were also greatly increased. In No. 91, the hot working temperature exceeded 1000 ° C, so a thick oxide film was formed on the rolled material. No. 91
The characteristics of No. 53 are equivalent to those of No. 53 of the present invention, and it is understood that hot working at a temperature exceeding 1000 ° C. only causes an increase in energy cost and is meaningless. In No. 92, the annealing temperature after hot working was low, so both the tensile strength and conductivity decreased.

【0038】[0038]

【発明の効果】以上に述べたように、本発明の製造方法
で得られた電子機器用銅合金は、強度や導電性の特性に
優れ、また、半田付性や打抜き性、エッチング性にも優
れるものであるから、電子機器の近年の傾向である高密
度化、高集積化に好適に対応できる。また、ピン数が多
い、多ピンリードフレームにも好適に適用できる。本発
明はリードフレームに好適なものであるが、リードフレ
ームの他、端子、コネクター、電極等、一般導電材料と
しても好適である。このように本発明は工業上顕著な効
果を奏するものである。
As described above, the manufacturing method of the present invention
The copper alloy for electronic devices obtained in 1. is excellent in strength and conductivity, and also excellent in solderability, punching property, and etching property. It is possible to suitably cope with high integration. Further, it can be suitably applied to a multi-pin lead frame having a large number of pins. Although the present invention is suitable for a lead frame, it is also suitable for a general conductive material such as a terminal, a connector, and an electrode, in addition to the lead frame. As described above, the present invention has a remarkable industrial effect.

フロントページの続き (56)参考文献 特開 昭63−38543(JP,A) 特開 昭63−93837(JP,A) 特開 昭63−109132(JP,A) 特開 昭63−310929(JP,A) 特開 昭63−310930(JP,A) 特開 昭64−56842(JP,A) 特開 平1−198439(JP,A) 特開 平4−231445(JP,A) 特開 平5−311364(JP,A) 特開 平6−184674(JP,A) (58)調査した分野(Int.Cl.7,DB名) C22C 9/02 C22C 9/04 C22F 1/08 H01L 23/50 H05K 1/09 Continuation of the front page (56) Reference JP-A-63-38543 (JP, A) JP-A-63-93837 (JP, A) JP-A-63-109132 (JP, A) JP-A-63-310929 (JP , A) JP 63-310930 (JP, A) JP 64-56842 (JP, A) JP 1-198439 (JP, A) JP 4-231445 (JP, A) JP 5-311364 (JP, A) JP-A-6-184674 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C22C 9/02 C22C 9/04 C22F 1/08 H01L 23 / 50 H05K 1/09

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】Crを0.1〜0.4wt%、Zrを0.
2wt%未満、Snを0.05〜2.0wt%、Znを
0.05〜2.0wt%、Sr、Ba、Biの1種以上
を総計で0.002〜0.2wt%含み、Pを0.01
wt%未満、Sを0.005wt%未満、O2 を0.0
05wt%未満とし、残部Cu及び不可避不純物からな
る銅合金に、鋳造加工、熱間加工、冷間加工を施すにあ
たり、前記鋳造加工時の冷却速度を5℃/秒以上とし、
前記鋳造加工にて得られる銅合金鋳塊を850〜100
0℃に加熱して熱間加工し、熱間加工後10℃/秒以上
の速度で冷却し、次いで冷間加工を300〜500℃で
10分〜24時間の熱処理を1回以上入れて行うことを
特徴とする前記銅合金に含まれる晶出物又は析出物の大
きさが3μm未満、前記銅合金の結晶粒度が5μm未満
である打抜き性に優れた電子機器用銅合金の製造方法。
1. A Cr content of 0.1 to 0.4 wt% and a Zr content of 0.
Less than 2 wt%, 0.05 to 2.0 wt% Sn, 0.05 to 2.0 wt% Zn, 0.002 to 0.2 wt% of one or more of Sr, Ba and Bi in total, and P 0.01
less than wt%, S less than 0.005 wt%, O 2 0.0
When performing casting, hot working, or cold working on a copper alloy containing less than 05 wt% and the balance Cu and unavoidable impurities, the cooling rate during casting is 5 ° C./sec or more,
The copper alloy ingot obtained by the casting process is 850-100.
It is heated to 0 ° C. to be hot worked, cooled at a rate of 10 ° C./sec or more after hot working, and then cold worked at 300 to 500 ° C. for 10 minutes to 24 hours by one or more heat treatments. The large amount of crystallized substances or precipitates contained in the copper alloy characterized by
The grain size is less than 3 μm, and the grain size of the copper alloy is less than 5 μm.
A method for producing a copper alloy for electronic equipment , which is excellent in punchability .
【請求項2】Crを0.1〜0.4wt%、Zrを0.
2wt%未満、Znを0.05〜2wt%、Co、M
g、Mn、Si、Snの1種以上を総計で0.01〜1
wt%含み、更にPb、Biの1種以上を総計で0.0
05〜0.1wt%含み、P含有量を0.01wt%未
満、S及びO2 の含有量をそれぞれ0.005wt%未
満とし、残部Cu及び不可避不純物からなる銅合金に、
鋳造加工、熱間加工、冷間加工を施すにあたり、前記鋳
造加工時の冷却速度を5℃/秒以上とし、前記鋳造加工
にて得られる銅合金鋳塊を850〜1000℃に加熱し
て熱間加工し、熱間加工後10℃/秒以上の速度で急冷
し、次いで冷間加工および300〜500℃で10分〜
24時間の熱処理を少なくとも1回入れることを特徴と
する前記銅合金に含まれる晶出物又は析出物の大きさが
3μm未満、前記銅合金の結晶粒度が5μm未満である
打抜き性に優れた電子機器用銅合金の製造方法。
2. A Cr content of 0.1 to 0.4 wt% and a Zr content of 0.
Less than 2 wt%, Zn 0.05 to 2 wt%, Co, M
0.01 to 1 in total of one or more of g, Mn, Si and Sn
wt% and further contains one or more of Pb and Bi in total of 0.0
05 to 0.1 wt%, P content less than 0.01 wt%, S and O 2 content less than 0.005 wt% respectively, and a copper alloy consisting of the balance Cu and unavoidable impurities,
When performing casting, hot working, or cold working, the cooling rate during the casting is set to 5 ° C./sec or more, and the copper alloy ingot obtained by the casting is heated to 850 to 1000 ° C. Cold working, quenching at a rate of 10 ° C./sec or more after hot working, and then cold working and 300 to 500 ° C. for 10 minutes to
The size of crystallized substances or precipitates contained in the copper alloy is characterized by being subjected to a heat treatment for 24 hours at least once.
Less than 3 μm, the grain size of the copper alloy is less than 5 μm
A method for producing a copper alloy for electronic equipment, which has excellent punchability .
【請求項3】Crを0.1〜0.4wt%、Zrを0.
2wt%未満、Znを0.05〜2wt%、Co、M
g、Mn、Si、Snの1種以上を総計で0.01〜1
wt%含み、更にPb、Biの1種以上を総計で0.0
05〜0.1wt%、Ca、Sr、Ba、Teの1種以
上を総計で0.005〜0.2wt%含み(但しPbと
Caの共存を除く)、更にP含有量を0.01wt%未
満、S及びO2 の含有量をそれぞれ0.005wt%未
満とし、残部Cu及び不可避不純物からなる銅合金に、
鋳造加工、熱間加工、冷間加工を施すにあたり、前記鋳
造加工時の冷却速度を5℃/秒以上とし、前記鋳造加工
にて得られる銅合金鋳塊を850〜1000℃に加熱し
て熱間加工し、熱間加工後10℃/秒以上の速度で急冷
し、次いで冷間加工および300〜500℃で10分〜
24時間の熱処理を少なくとも1回入れることを特徴と
する前記銅合金に含まれる晶出物又は析出物の大きさが
3μm未満、前記銅合金の結晶粒度が5μm未満である
打抜き性に優れた電子機器用銅合金の製造方法。
3. A Cr content of 0.1 to 0.4 wt% and a Zr content of 0.
Less than 2 wt%, Zn 0.05 to 2 wt%, Co, M
0.01 to 1 in total of one or more of g, Mn, Si and Sn
wt% and further contains one or more of Pb and Bi in total of 0.0
05 to 0.1 wt%, 0.005 to 0.2 wt% in total of one or more of Ca, Sr, Ba and Te (excluding coexistence of Pb and Ca), and further P content of 0.01 wt% To less than 0.005 wt% for each of S and O 2 , and a copper alloy consisting of the balance Cu and unavoidable impurities,
When performing casting, hot working, or cold working, the cooling rate during the casting is set to 5 ° C./sec or more, and the copper alloy ingot obtained by the casting is heated to 850 to 1000 ° C. Cold working, quenching at a rate of 10 ° C./sec or more after hot working, and then cold working and 300 to 500 ° C. for 10 minutes to
The size of crystallized substances or precipitates contained in the copper alloy is characterized by being subjected to a heat treatment for 24 hours at least once.
Less than 3 μm, the grain size of the copper alloy is less than 5 μm
A method for producing a copper alloy for electronic equipment, which has excellent punchability .
JP31352696A 1996-03-14 1996-11-25 Copper alloy for electronic equipment and method for producing the same Expired - Lifetime JP3519888B2 (en)

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JP5751996 1996-03-14
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