JP3464061B2 - ＳｉＯＸ層をその上に有する基板中にアスペクト比の高いホールまたは開口部をプラズマエッチングするための方法 - Google Patents

ＳｉＯＸ層をその上に有する基板中にアスペクト比の高いホールまたは開口部をプラズマエッチングするための方法

Info

Publication number
JP3464061B2
JP3464061B2 JP29419994A JP29419994A JP3464061B2 JP 3464061 B2 JP3464061 B2 JP 3464061B2 JP 29419994 A JP29419994 A JP 29419994A JP 29419994 A JP29419994 A JP 29419994A JP 3464061 B2 JP3464061 B2 JP 3464061B2
Authority
JP
Japan
Prior art keywords
etching
layer
substrate
flow rate
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP29419994A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07193057A (ja
Inventor
サブハッシュ・グプタ
スーザン・チェン
アンジェラ・ヒュイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JPH07193057A publication Critical patent/JPH07193057A/ja
Application granted granted Critical
Publication of JP3464061B2 publication Critical patent/JP3464061B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/083—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being via holes penetrating underlying conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP29419994A 1993-11-30 1994-11-29 ＳｉＯＸ層をその上に有する基板中にアスペクト比の高いホールまたは開口部をプラズマエッチングするための方法 Expired - Lifetime JP3464061B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US159634 1993-11-30
US08/159,634 US5468340A (en) 1992-10-09 1993-11-30 Highly selective high aspect ratio oxide etch method and products made by the process

Publications (2)

Publication Number Publication Date
JPH07193057A JPH07193057A (ja) 1995-07-28
JP3464061B2 true JP3464061B2 (ja) 2003-11-05

Family

ID=22573345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29419994A Expired - Lifetime JP3464061B2 (ja) 1993-11-30 1994-11-29 ＳｉＯＸ層をその上に有する基板中にアスペクト比の高いホールまたは開口部をプラズマエッチングするための方法

Country Status (5)

Country Link
US (1) US5468340A (online.php)
EP (1) EP0655775A1 (online.php)
JP (1) JP3464061B2 (online.php)
KR (1) KR100323242B1 (online.php)
TW (1) TW249295B (online.php)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468339A (en) * 1992-10-09 1995-11-21 Advanced Micro Devices, Inc. Plasma etch process
US5935877A (en) * 1995-09-01 1999-08-10 Applied Materials, Inc. Etch process for forming contacts over titanium silicide
US6001699A (en) * 1996-01-23 1999-12-14 Intel Corporation Highly selective etch process for submicron contacts
DE19707886C2 (de) * 1997-02-27 2003-12-18 Micronas Semiconductor Holding Verfahren zum Erzeugen von Kontaktlöchern in einer Halbleiteranordnung
KR19980084172A (ko) * 1997-05-21 1998-12-05 윤종용 고 식각선택비를 이용한 반도체장치의 건식식각방법
TW430900B (en) * 1997-09-08 2001-04-21 Siemens Ag Method for producing structures having a high aspect ratio
US6066566A (en) * 1998-01-28 2000-05-23 International Business Machines Corporation High selectivity collar oxide etch processes
US6057193A (en) 1998-04-16 2000-05-02 Advanced Micro Devices, Inc. Elimination of poly cap for easy poly1 contact for NAND product
US6080676A (en) * 1998-09-17 2000-06-27 Advanced Micro Devices, Inc. Device and method for etching spacers formed upon an integrated circuit gate conductor
US6281132B1 (en) 1998-10-06 2001-08-28 Advanced Micro Devices, Inc. Device and method for etching nitride spacers formed upon an integrated circuit gate conductor
US6221745B1 (en) * 1998-11-27 2001-04-24 Taiwan Semiconductor Manufacturing Company High selectivity mask oxide etching to suppress silicon pits
US6214742B1 (en) * 1998-12-07 2001-04-10 Advanced Micro Devices, Inc. Post-via tin removal for via resistance improvement
EP1132959A1 (en) * 2000-03-03 2001-09-12 STMicroelectronics S.r.l. A method of forming low-resistivity connections in non-volatile memories
JP3539946B2 (ja) * 2002-03-28 2004-07-07 沖電気工業株式会社 Ｓｏｉ構造を有する半導体装置の製造方法
US8246787B2 (en) * 2009-09-03 2012-08-21 Pratt & Whitney Rockedyne, Inc. Solar desalinization plant
US8246786B2 (en) * 2009-09-03 2012-08-21 Pratt & Whitney Rocketdyne, Inc. Solar desalinization plant

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4871421A (en) 1988-09-15 1989-10-03 Lam Research Corporation Split-phase driver for plasma etch system

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795722A (en) * 1987-02-05 1989-01-03 Texas Instruments Incorporated Method for planarization of a semiconductor device prior to metallization
GB2214709A (en) * 1988-01-20 1989-09-06 Philips Nv A method of enabling connection to a substructure forming part of an electronic device
US5254213A (en) * 1989-10-25 1993-10-19 Matsushita Electric Industrial Co., Ltd. Method of forming contact windows
US5026666A (en) * 1989-12-28 1991-06-25 At&T Bell Laboratories Method of making integrated circuits having a planarized dielectric
US4978420A (en) * 1990-01-03 1990-12-18 Hewlett-Packard Company Single chamber via etch through a dual-layer dielectric
US5021121A (en) * 1990-02-16 1991-06-04 Applied Materials, Inc. Process for RIE etching silicon dioxide
US5213659A (en) * 1990-06-20 1993-05-25 Micron Technology, Inc. Combination usage of noble gases for dry etching semiconductor wafers
US5022958A (en) * 1990-06-27 1991-06-11 At&T Bell Laboratories Method of etching for integrated circuits with planarized dielectric
JP2697952B2 (ja) * 1990-11-15 1998-01-19 シャープ株式会社 半導体装置の製造方法
US5176790A (en) * 1991-09-25 1993-01-05 Applied Materials, Inc. Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal
US5269879A (en) * 1991-10-16 1993-12-14 Lam Research Corporation Method of etching vias without sputtering of underlying electrically conductive layer
US5284549A (en) * 1992-01-02 1994-02-08 International Business Machines Corporation Selective fluorocarbon-based RIE process utilizing a nitrogen additive
US5468339A (en) * 1992-10-09 1995-11-21 Advanced Micro Devices, Inc. Plasma etch process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4871421A (en) 1988-09-15 1989-10-03 Lam Research Corporation Split-phase driver for plasma etch system

Also Published As

Publication number Publication date
KR100323242B1 (ko) 2002-05-13
KR950015622A (ko) 1995-06-17
US5468340A (en) 1995-11-21
TW249295B (online.php) 1995-06-11
EP0655775A1 (en) 1995-05-31
JPH07193057A (ja) 1995-07-28

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