JP3408418B2 - Power semiconductor module - Google Patents
Power semiconductor moduleInfo
- Publication number
- JP3408418B2 JP3408418B2 JP7322298A JP7322298A JP3408418B2 JP 3408418 B2 JP3408418 B2 JP 3408418B2 JP 7322298 A JP7322298 A JP 7322298A JP 7322298 A JP7322298 A JP 7322298A JP 3408418 B2 JP3408418 B2 JP 3408418B2
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- terminal
- semiconductor element
- soldered
- heat spreader
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は，ダイオード，サイ
リスタ等の電力用半導体モジュールに関するものであ
る。
【０００２】
【従来の技術】従来のダイオード，サイリスタ等の電力
用半導体素子を収納する電力用半導体モジュールに，図
３に示すものがある。図３において，２は金属ベースで
あり，この金属ベース２の上に絶縁板４が貼り付けられ
ている。この絶縁板４上に，図４に示すようにＬ型が外
部に引き出される端子２２と，ヒートスプレッダ８に半
田付けされた電力用半導体素子６が載置されている。ま
た，上記電力用半導体素子６にも外部に引き出される端
子２４が載置され，絶縁板４と端子２２とが，また，端
子２２とヒートスプレッダ８とが，さらに電力用半導体
素子６と端子２４とが半田付けされている。
【０００３】上記金属ベース２の端部に，樹脂ケース１
６をシリコンゴム等により接着し，このケース１６内に
シリコンゲル等の封止剤２０が注入されて，電力用半導
体素子６が封止される。この後，端子２２，２４が貫通
できる穴１８ａを有する天板１８を樹脂ケース１６の上
端部に載置し，電力用半導体モジュールが形成される。
【０００４】ところで，ダイオード，サイリスタ等の電
力用半導体素子は，メサ型構造をしており，例えば電力
用半導体素子がダイオードチップで，ダイオードチップ
のアノード側，すなわち表面積の小さい方をヒートスプ
レッダ８に半田付けする場合は，ダイオードチップ６の
カソードとヒートスプレッダ８の空間距離を十分とるた
めに，ヒートスプレッダ８がダイオードチップ６と接す
る部分を，ダイオードチップ６と同じ形状，さらに熱放
出を良好にするために下部を広くした形状にしている。
【０００５】
【発明が解決しようとする課題】このため，ダイオード
チップ６と外部に引き出される端子２２との間隔が狭く
なり，端子２２とヒートスプレッダ８を半田付けする半
田が，半田付け時に図３の半田２６ａに示すように上昇
し，ヒートスプレッダ８とダイオードチップ６のカソー
ド間を半田２６ａにより短絡することがあった。
【０００６】
【課題を解決するための手段】本発明の電力用半導体モ
ジュールは，絶縁板が貼り付けられた金属ベースと，上
記絶縁板上に半田付けされた第１の端子と，上記第１の
端子上にヒートスプレッタを介して半田付けられた電力
用半導体素子と，上記電力用半導体素子に半田付けられ
た第２の端子と，上記金属ベースの端部に接着された樹
脂ケースと，上記樹脂ケース内に上記電力用半導体素子
を封止する封止剤とを備えた電力用半導体モジュールに
おいて，上記第一の端子に，上記ヒートスプレッダが半
田付けられる支持部から立ち上がる部分に，上記第一の
端子に対向する電力用半導体素子の端部より大きい穴を
備えたものである。
【０００７】すなわち，金属ベースに貼り付けられた絶
縁板上に，第１の端子が半田付けられ，この第１の端子
上には，ヒートスプレッダを介して電力用半導体素子が
半田付けられ，さらにこの電力用半導体素子上に，第２
の端子が半田付けられる。金属ベースの端部には，樹脂
ケースが接着され，この樹脂ケース内に封止剤が注入
れ，電力用半導体素子が封止される。
【０００８】さらに，第１の端子は，ヒートスプレッダ
が半田付けられる支持部から立ち上がる部分に，第１の
端子に対向する電力用半導体素子の端部より大きい穴が
設けられる。これにより，電力用半導体素子が第１の端
子に半田付けされる際に，半田がヒートスプレッダ以上
に上昇することがなく，電力用半導体素子とヒートスプ
レッダとが半田により短絡されるのが回避される。
【０００９】
【発明の実施の形態】本発明をその１実施の形態を示す
図１及び図２に基づき説明する。図１において，２は金
属ベースであり，この金属ベース２の上に絶縁板４が貼
り付けられている。この絶縁板４上に，第１の外部に引
き出される端子１２と，さらにヒートスプレッダ８に半
田付けされた電力用半導体素子，例えばダイオードチッ
プ６が載置されている。また，上記ダイオードチップ６
にも外部に引き出される第２の端子１４が載置され，絶
縁板４と端子１２とが，また，端子１２とヒートスプレ
ッダ８とが，さらにダイオードチップ６と端子１４とが
半田付けされている。
【００１０】上記金属ベース２の端部に，樹脂ケース１
６がシリコンゴム等により接着され，このケース１６内
にシリコンゲル等の封止剤２０が注入されてダイオード
チップ６が封止される。この後，端子１２，１４が貫通
できる穴１８ａを有する天板１８を，樹脂ケース１６の
上端部に載置し，電力用半導体モジュール１が形成され
る。上記電力用半導体モジュール１は，従来の電力用半
導体モジュールと同じである。異なる点は，ヒートスプ
レッダ８の下部に半田付けされ外部に引き出される端子
１２が，図２に示すように半田付けされる支持部１２ｂ
から立ち上がる部分に，端子に対向するダイオードチッ
プ６の端部より大きい穴１２ａを設けたものである。
【００１１】すなわち，ダイオードチップと端子との間
隔は，穴により大きくなり，端子１２とヒートスプレッ
ダ８とを半田付けする半田が，半田付け時に図１の半田
１０ａに示すようにヒートスプレッダにのみ半田付けら
れる。従って，ダイオードチップ６とヒートスプレッダ
８とが半田１０ａにより短絡することがない。
【００１２】上記実施例では，電力用半導体素子をダイ
オードチップで説明したが，電力用半導体がサイリスタ
チップであってもよい。
【００１３】
【発明の効果】本発明の電力用半導体モジュールは，端
子とヒートスプレッダとを半田付けする半田が，ヒート
スプレッダ以上に上昇することがなく，電力用半導体素
子とヒートスプレッダとが半田により短絡されることが
ない。従って，歩留まりのよい電力用半導体モジュール
を得ることができる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module such as a diode and a thyristor. 2. Description of the Related Art FIG. 3 shows a conventional power semiconductor module for housing a power semiconductor element such as a diode or a thyristor. In FIG. 3, reference numeral 2 denotes a metal base, on which an insulating plate 4 is adhered. As shown in FIG. 4, a terminal 22 from which the L-shape is drawn out and a power semiconductor element 6 soldered to the heat spreader 8 are placed on the insulating plate 4. A terminal 24 to be drawn out is also placed on the power semiconductor element 6, the insulating plate 4 and the terminal 22, the terminal 22 and the heat spreader 8, the power semiconductor element 6 and the terminal 24, and the like. Is soldered. [0003] A resin case 1 is attached to an end of the metal base 2.
6 is adhered with silicon rubber or the like, and a sealing agent 20 such as silicon gel is injected into the case 16 to seal the power semiconductor element 6. Thereafter, the top plate 18 having the hole 18a through which the terminals 22 and 24 can pass is placed on the upper end of the resin case 16 to form the power semiconductor module. Power semiconductor elements such as diodes and thyristors have a mesa structure. For example, the power semiconductor element is a diode chip, and the anode side of the diode chip, that is, the smaller surface area is soldered to the heat spreader 8. When attaching, the heat spreader 8 has a portion in contact with the diode chip 6 in the same shape as the diode chip 6 and a lower portion in order to improve the heat release, in order to secure a sufficient spatial distance between the cathode of the diode chip 6 and the heat spreader 8. Has a wider shape. [0005] Therefore, the distance between the diode chip 6 and the terminal 22 drawn out becomes narrow, and the solder for soldering the terminal 22 and the heat spreader 8 becomes the same as that shown in FIG. As shown by the solder 26a, the solder 26a may rise and short-circuit between the heat spreader 8 and the cathode of the diode chip 6 with the solder 26a. A power semiconductor module according to the present invention has a metal base to which an insulating plate is attached, a first terminal soldered on the insulating plate, and a first terminal. A power semiconductor element soldered on a terminal of the power semiconductor element via a heat spreader; a second terminal soldered to the power semiconductor element; a resin case bonded to an end of the metal base; In a power semiconductor module having a sealing agent for sealing the power semiconductor element in a case, the first terminal is provided on a portion rising from a support portion to which the heat spreader is soldered to the first terminal. And a hole which is larger than the end of the power semiconductor element facing the power semiconductor device. That is, a first terminal is soldered on an insulating plate attached to a metal base, and a power semiconductor element is soldered on the first terminal via a heat spreader. The second on the power semiconductor device
Terminals are soldered. A resin case is adhered to the end of the metal base, and a sealing agent is injected into the resin case to seal the power semiconductor element. Further, the first terminal is provided with a hole, which is larger than the end of the power semiconductor element facing the first terminal, at a portion rising from the support portion to which the heat spreader is soldered. Thus, when the power semiconductor element is soldered to the first terminal, the solder does not rise more than the heat spreader, and the power semiconductor element and the heat spreader are prevented from being short-circuited by the solder. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to FIGS. In FIG. 1, reference numeral 2 denotes a metal base, on which an insulating plate 4 is adhered. On the insulating plate 4, a terminal 12 drawn out to the first outside and a power semiconductor element, for example, a diode chip 6, soldered to the heat spreader 8 are mounted. In addition, the diode chip 6
Also, a second terminal 14 to be drawn out is mounted thereon, and the insulating plate 4 and the terminal 12, the terminal 12 and the heat spreader 8, and the diode chip 6 and the terminal 14 are soldered. A resin case 1 is attached to the end of the metal base 2.
6 is adhered by silicon rubber or the like, and a sealing agent 20 such as silicon gel is injected into the case 16 to seal the diode chip 6. Thereafter, the top plate 18 having the hole 18a through which the terminals 12 and 14 can pass is placed on the upper end of the resin case 16 to form the power semiconductor module 1. The power semiconductor module 1 is the same as a conventional power semiconductor module. The difference is that the terminal 12 soldered to the lower portion of the heat spreader 8 and drawn out is connected to the support portion 12b to be soldered as shown in FIG.
A hole 12a, which is larger than the end of the diode chip 6 facing the terminal, is provided in a portion rising from. That is, the distance between the diode chip and the terminal is increased by the hole , and the solder for soldering the terminal 12 and the heat spreader 8 is soldered only to the heat spreader at the time of soldering, as shown by the solder 10a in FIG. . Therefore, the diode chip 6 and the heat spreader 8 are not short-circuited by the solder 10a. In the above embodiment, the power semiconductor element is described as a diode chip, but the power semiconductor may be a thyristor chip. According to the power semiconductor module of the present invention, the solder for soldering the terminals and the heat spreader does not rise more than the heat spreader, and the power semiconductor element and the heat spreader are short-circuited by the solder. Nothing. Therefore, a power semiconductor module with a good yield can be obtained.
【図面の簡単な説明】
【図１】本発明の電力用半導体モジュールの一実施の形
態を示す構造図である。
【図２】図１の一部品の詳細を示す鳥瞰図である。
【図３】従来の電力用半導体モジュールの構造図であ
る。
【図４】図３の一部品の詳細を示す鳥瞰図である。
【符号の説明】
１ 電力用半導体モジュール
２ 金属ベース
４ 絶縁板
６ 電力用半導体素子（ダイオードチップ）
８ ヒートスプレッダ
１０ａ 半田
１２ （外部に引き出される第一の）端子
１２ａ 穴
１４ （外部に引き出される第二の）端子
１６ 樹脂ケース
１８ 天板
２０ 封止剤BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a structural diagram showing one embodiment of a power semiconductor module of the present invention. FIG. 2 is a bird's-eye view showing details of one part of FIG. 1; FIG. 3 is a structural view of a conventional power semiconductor module. FIG. 4 is a bird's-eye view showing details of one part of FIG. 3; DESCRIPTION OF SYMBOLS 1 Power semiconductor module 2 Metal base 4 Insulating plate 6 Power semiconductor element (diode chip) 8 Heat spreader 10a Solder 12 (First drawn out) Terminal 12a hole 14 (Second drawn out ) Terminal 16 Resin case 18 Top plate 20 Sealant
Claims (1)
上記絶縁板上に半田付けされた第１の端子と，上記第１
の端子上にヒートスプレッタを介して半田付けられた電
力用半導体素子と，上記電力用半導体素子に半田付けら
れた第２の端子と，上記金属ベースの端部に接着された
樹脂ケースと，上記樹脂ケース内に上記電力用半導体素
子を封止する封止剤とを備えた電力用半導体モジュール
において，上記第一の端子に，上記ヒートスプレッダが
半田付けられる支持部から立ち上がる部分に，上記第一
の端子に対向する電力用半導体素子の端部より大きい穴
を備えたことを特徴とする電力用半導体モジュール。(57) [Claim 1] A metal base to which an insulating plate is attached,
A first terminal soldered on the insulating plate;
A power semiconductor element soldered on a terminal of the power semiconductor element via a heat spreader; a second terminal soldered to the power semiconductor element; a resin case bonded to an end of the metal base; In a power semiconductor module having a sealing agent for sealing the power semiconductor element in a case, the first terminal is provided on a portion rising from a support portion to which the heat spreader is soldered to the first terminal. A power semiconductor module, comprising: a hole larger than an end of a power semiconductor element facing the power semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7322298A JP3408418B2 (en) | 1998-03-05 | 1998-03-05 | Power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7322298A JP3408418B2 (en) | 1998-03-05 | 1998-03-05 | Power semiconductor module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11251514A JPH11251514A (en) | 1999-09-17 |
| JP3408418B2 true JP3408418B2 (en) | 2003-05-19 |
Family
ID=13511941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7322298A Expired - Lifetime JP3408418B2 (en) | 1998-03-05 | 1998-03-05 | Power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3408418B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5939041B2 (en) | 2012-06-01 | 2016-06-22 | 住友電気工業株式会社 | Semiconductor module and method for manufacturing semiconductor module |
-
1998
- 1998-03-05 JP JP7322298A patent/JP3408418B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11251514A (en) | 1999-09-17 |
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