JPH11354659A - Power semiconductor module - Google Patents
Power semiconductor moduleInfo
- Publication number
- JPH11354659A JPH11354659A JP17972198A JP17972198A JPH11354659A JP H11354659 A JPH11354659 A JP H11354659A JP 17972198 A JP17972198 A JP 17972198A JP 17972198 A JP17972198 A JP 17972198A JP H11354659 A JPH11354659 A JP H11354659A
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- semiconductor module
- resin case
- metal base
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は,電力用半導体モジ
ュールに関し,特に取り付けの改善に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module, and more particularly to an improvement in mounting.
【0002】[0002]
【従来の技術】従来の電力用半導体素子を収納する電力
用半導体モジュールに,図2に示すものがある。図2に
おいて2は,電力用半導体モジュール1の金属ベースで
あり,この金属ベース2の上に絶縁板6が半田付けされ
ている。この絶縁板6上に外部に引き出される端子8
と,さらにその上にサイリスタ,ダイオード,トランジ
スタ等の電力用半導体素子10が載置され半田付けされ
ている。2. Description of the Related Art A conventional power semiconductor module accommodating a power semiconductor element is shown in FIG. In FIG. 2, reference numeral 2 denotes a metal base of the power semiconductor module 1, on which an insulating plate 6 is soldered. Terminals 8 drawn out on the insulating plate 6
Further, a power semiconductor element 10 such as a thyristor, a diode, and a transistor is mounted thereon and soldered.
【0003】この後,上記金属ベース2の端部に樹脂ケ
ース4がシリコンゴム等の接着剤により接着され,この
ケース4内にシリコンゲル等の封止剤14が注入され
て,電力用半導体素子10が封止される。After that, a resin case 4 is adhered to the end of the metal base 2 with an adhesive such as silicon rubber, and a sealing agent 14 such as a silicon gel is injected into the case 4 so that the power semiconductor element is formed. 10 is sealed.
【0004】ところで,金属ベース2と樹脂ケース4
は,電力用半導体モジュール1が冷却用フィンに取り付
けられるために,金属ベース2の取付穴2aと樹脂ケー
ス4に取付穴4aが連通するように設けられている。Incidentally, the metal base 2 and the resin case 4
In order to mount the power semiconductor module 1 to the cooling fins, the mounting holes 2 a of the metal base 2 and the mounting holes 4 a communicate with the resin case 4.
【0005】[0005]
【発明が解決しようとする課題】この電力用半導体モジ
ュールは,図示しないビスを取付穴4a,2aに貫通さ
せ,ビスが図示しない冷却ファンに取り付けられる。こ
の時,ビスの頭部が樹脂ケース4に食い込み,樹脂ケー
ス4が割れるという問題がある。In this power semiconductor module, screws (not shown) are passed through the mounting holes 4a and 2a, and the screws are mounted on a cooling fan (not shown). At this time, there is a problem that the head of the screw bites into the resin case 4 and the resin case 4 is broken.
【0006】[0006]
【課題を解決するための手段】本発明の電力用半導体モ
ジュールは,金属ベースと,上記金属ベース上に設けら
れた電力用半導体素子と,上記金属ベースの端部に接着
剤により接着され,上記電力用半導体素子を封止する樹
脂ケースを備えた電力用半導体モジュールにおいて,上
記金属ベース取付穴と連通し,電力用半導体モジュール
を取り付ける上記樹脂ケースの取付穴に,端面が上記樹
脂ケースの取付面より0.1〜0.2mm上部に出た金
属製ブッシュが設けられたものである。A power semiconductor module according to the present invention comprises a metal base, a power semiconductor element provided on the metal base, and an adhesive bonded to an end of the metal base by an adhesive. In a power semiconductor module provided with a resin case for encapsulating a power semiconductor element, an end face communicates with the metal base mounting hole, and an end face is provided on a mounting surface of the resin case for mounting the power semiconductor module. A metal bush protruding from the upper side by 0.1 to 0.2 mm is provided.
【0007】すなわち,電力用半導体モジュールを外部
の冷却用フィン等に取り付ける場合,ビスを樹脂ケース
と金属ベースとを貫通する取付穴に挿入し,締め付けて
行われる。この締め付け時に,ビスの頭部が金属製ブッ
シュの端面に接触し,ビスの締め付けによる樹脂ケース
の割れはない。That is, when the power semiconductor module is mounted on an external cooling fin or the like, a screw is inserted into a mounting hole passing through the resin case and the metal base and tightened. At the time of this tightening, the screw head comes into contact with the end face of the metal bush, and there is no crack in the resin case due to the tightening of the screw.
【0008】[0008]
【発明の実施の形態】本発明を,その実施の形態を示し
た図1に基づき説明する。図1において,2は電力用半
導体モジュール1の金属ベースであり,この金属ベース
2の上に絶縁板6が半田付けされている。この絶縁板6
上に外部に引き出される端子8とさらにその上にサイリ
スタ,ダイオード,トランジスタ等の電力用半導体素子
10が載置され,半田付けされている。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to FIG. 1 showing an embodiment thereof. In FIG. 1, reference numeral 2 denotes a metal base of the power semiconductor module 1, on which an insulating plate 6 is soldered. This insulating plate 6
A terminal 8 extending to the outside and a power semiconductor element 10 such as a thyristor, a diode, and a transistor are mounted thereon and soldered thereon.
【0009】この後,上記金属ベース2の端部に樹脂ケ
ース4がシリコンゴム等の接着剤により接着され,この
ケース4内にシリコンゲル等の封止剤14が注入され,
電力用半導体素子10が封止される。Thereafter, a resin case 4 is adhered to the end of the metal base 2 with an adhesive such as silicon rubber, and a sealing agent 14 such as a silicon gel is injected into the case 4.
The power semiconductor element 10 is sealed.
【0010】ところで,金属ベース2と上記樹脂ケース
4は,電力用半導体モジュール1を冷却用フィンに取り
付けるために連通する取付穴が設けられ,樹脂ケース2
の取付穴には金属製の中空のブッシュ16がはめ込まれ
ている。このブッシュ16の端面16aは,樹脂ケース
4の取付面4bより0.1〜0.2mm高く外に出てい
る。The metal base 2 and the resin case 4 are provided with mounting holes for communicating the power semiconductor module 1 to the cooling fins.
A hollow bush 16 made of metal is fitted in the mounting hole. The end face 16a of the bush 16 projects 0.1 to 0.2 mm higher than the mounting face 4b of the resin case 4.
【0011】従って,この電力用半導体モジュールは,
図示しないビスがブッシュ16の取付穴16bと,金属
ベース2の取付穴2aを貫通して,図示しない冷却フィ
ンに取り付けられる。この時,ビスの頭部が金属製のブ
ッシュの端面と接触するため,ビスにより樹脂ケースが
割れることはない。Therefore, this power semiconductor module is
Screws (not shown) penetrate through the mounting holes 16b of the bush 16 and the mounting holes 2a of the metal base 2, and are mounted on cooling fins (not shown). At this time, since the head of the screw is in contact with the end face of the metal bush, the screw does not break the resin case.
【0012】上記発明の実施の形態では,ブッシュが樹
脂ケース2の取付穴にはめ込まれているが,樹脂ケース
の形成時にブッシュを一体形成してもよい。In the embodiment of the present invention, the bush is fitted in the mounting hole of the resin case 2, but the bush may be formed integrally when the resin case is formed.
【0013】[0013]
【発明の効果】本発明の電力用半導体モジュールでは,
電力用半導体モジュールを冷却フィン等に取り付けて実
施する場合,取付用ビスによって電力用半導体モジュー
ルが破損することはなくなる。According to the power semiconductor module of the present invention,
When the power semiconductor module is mounted on a cooling fin or the like, the power semiconductor module is not damaged by the mounting screws.
【図1】本発明の電力用半導体モジュールの一実施の形
態を示す一部破断外形図である。FIG. 1 is a partially broken external view showing an embodiment of a power semiconductor module of the present invention.
【図2】従来の電力用半導体モジュールの一部破断外形
図である。FIG. 2 is a partially broken external view of a conventional power semiconductor module.
2 金属ベース 4 樹脂ケース 4b 取付面 10 電力用半導体素子 16 ブッシュ 16a 端面 2 Metal base 4 Resin case 4b Mounting surface 10 Semiconductor element for power 16 Bush 16a End face
Claims (1)
られた電力用半導体素子と,上記金属ベースの端部に接
着剤により接着され,上記電力用半導体素子を封止する
樹脂ケースを備えた電力用半導体モジュールにおいて,
上記金属ベースの取付穴と連通し,電力用半導体モジュ
ールを取り付ける上記樹脂ケースの取付穴に,端面が上
記樹脂ケースの取付面より0.1〜0.2mm上部に出
た金属製ブッシュが設けられたことを特徴とする電力用
半導体モジュール。1. A power supply device comprising: a metal base; a power semiconductor element provided on the metal base; and a resin case bonded to an end of the metal base with an adhesive to seal the power semiconductor element. In power semiconductor modules,
A metal bush whose end face protrudes 0.1 to 0.2 mm above the mounting surface of the resin case is provided in the mounting hole of the resin case, which communicates with the mounting hole of the metal base and mounts the power semiconductor module. A power semiconductor module, characterized in that:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17972198A JPH11354659A (en) | 1998-06-11 | 1998-06-11 | Power semiconductor module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17972198A JPH11354659A (en) | 1998-06-11 | 1998-06-11 | Power semiconductor module |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11354659A true JPH11354659A (en) | 1999-12-24 |
Family
ID=16070721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17972198A Pending JPH11354659A (en) | 1998-06-11 | 1998-06-11 | Power semiconductor module |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11354659A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100405584C (en) * | 2004-10-14 | 2008-07-23 | 三菱电机株式会社 | Semiconductor device |
KR100890939B1 (en) * | 2002-09-12 | 2009-03-27 | 페어차일드코리아반도체 주식회사 | Case of semiconductor module incapable of separating bush |
JP2009071102A (en) * | 2007-09-14 | 2009-04-02 | Omron Corp | Power module structure |
KR100907899B1 (en) | 2007-07-25 | 2009-07-15 | 주식회사 동부하이텍 | Guide ring |
JP2011233814A (en) * | 2010-04-30 | 2011-11-17 | Nissan Motor Co Ltd | Electronic module and electronic module attachment structure |
DE112013007047B4 (en) | 2013-05-09 | 2023-02-23 | Mitsubishi Electric Corporation | semiconductor module |
-
1998
- 1998-06-11 JP JP17972198A patent/JPH11354659A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100890939B1 (en) * | 2002-09-12 | 2009-03-27 | 페어차일드코리아반도체 주식회사 | Case of semiconductor module incapable of separating bush |
CN100405584C (en) * | 2004-10-14 | 2008-07-23 | 三菱电机株式会社 | Semiconductor device |
KR100907899B1 (en) | 2007-07-25 | 2009-07-15 | 주식회사 동부하이텍 | Guide ring |
JP2009071102A (en) * | 2007-09-14 | 2009-04-02 | Omron Corp | Power module structure |
JP2011233814A (en) * | 2010-04-30 | 2011-11-17 | Nissan Motor Co Ltd | Electronic module and electronic module attachment structure |
DE112013007047B4 (en) | 2013-05-09 | 2023-02-23 | Mitsubishi Electric Corporation | semiconductor module |
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