JPH11251514A - Power semiconductor module - Google Patents

Power semiconductor module

Info

Publication number
JPH11251514A
JPH11251514A JP7322298A JP7322298A JPH11251514A JP H11251514 A JPH11251514 A JP H11251514A JP 7322298 A JP7322298 A JP 7322298A JP 7322298 A JP7322298 A JP 7322298A JP H11251514 A JPH11251514 A JP H11251514A
Authority
JP
Japan
Prior art keywords
power semiconductor
terminal
semiconductor element
heat spreader
soldered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7322298A
Other languages
Japanese (ja)
Other versions
JP3408418B2 (en
Inventor
Koichi Saito
晃一 斎藤
Hiromitsu Hayashi
宏光 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansha Electric Manufacturing Co Ltd
Original Assignee
Sansha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co Ltd filed Critical Sansha Electric Manufacturing Co Ltd
Priority to JP7322298A priority Critical patent/JP3408418B2/en
Publication of JPH11251514A publication Critical patent/JPH11251514A/en
Application granted granted Critical
Publication of JP3408418B2 publication Critical patent/JP3408418B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor module, wherein yield is improved without short-circuiting a power semiconductor element, and a heat spreader. SOLUTION: A first terminal 12, a power semiconductor element 6 soldered to a heat spreader 8 and a second terminal 14 are mounted on an insulation board 4 which is stuck on a metal base 2. The insulation board 4 and the first terminal 12, and the first terminal 12 and the heat spreader 8, and furthermore the power semiconductor element 6 and the second terminal 14 are soldered. A resin case 16 is bonded to an end part of the metallic base 2. In the process, a power semiconductor element is sealed inside the resin case 16 by a sealer 20, and the module 1 is formed. Furthermore, a cut-out portion 12a which is larger than an end part of the power semiconductor element 6 facing the first terminal 12 is formed in a part in which the first terminal 12 rises from a supporting part with the heat spreader 8 soldered to it.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は,ダイオード,サイ
リスタ等の電力用半導体モジュールに関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module such as a diode and a thyristor.

【0002】[0002]

【従来の技術】従来のダイオード,サイリスタ等の電力
用半導体素子を収納する電力用半導体モジュールに,図
3に示すものがある。図3において,2は金属ベースで
あり,この金属ベース2の上に絶縁板4が貼り付けられ
ている。この絶縁板4上に,図4に示すようにL型が外
部に引き出される端子22と,ヒートスプレッダ8に半
田付けされた電力用半導体素子6が載置されている。ま
た,上記電力用半導体素子6にも外部に引き出される端
子24が載置され,絶縁板4と端子22とが,また,端
子22とヒートスプレッダ8とが,さらに電力用半導体
素子6と端子24とが半田付けされている。
2. Description of the Related Art FIG. 3 shows a conventional power semiconductor module for accommodating power semiconductor elements such as diodes and thyristors. In FIG. 3, reference numeral 2 denotes a metal base, on which an insulating plate 4 is adhered. As shown in FIG. 4, a terminal 22 from which the L-shape is drawn out and a power semiconductor element 6 soldered to the heat spreader 8 are mounted on the insulating plate 4. A terminal 24 to be drawn out is also placed on the power semiconductor element 6, the insulating plate 4 and the terminal 22, the terminal 22 and the heat spreader 8, the power semiconductor element 6 and the terminal 24, and the like. Is soldered.

【0003】上記金属ベース2の端部に,樹脂ケース1
6をシリコンゴム等により接着し,このケース16内に
シリコンゲル等の封止剤20が注入されて,電力用半導
体素子6が封止される。この後,端子22,24が貫通
できる穴18aを有する天板18を樹脂ケース16の上
端部に載置し,電力用半導体モジュールが形成される。
[0003] A resin case 1 is attached to an end of the metal base 2.
6 is adhered with silicon rubber or the like, and a sealing agent 20 such as silicon gel is injected into the case 16 to seal the power semiconductor element 6. Thereafter, the top plate 18 having the hole 18a through which the terminals 22 and 24 can pass is placed on the upper end of the resin case 16 to form the power semiconductor module.

【0004】ところで,ダイオード,サイリスタ等の電
力用半導体素子は,メサ型構造をしており,例えば電力
用半導体素子がダイオードチップで,ダイオードチップ
のアノード側,すなわち表面積の小さい方をヒートスプ
レッダ8に半田付けする場合は,ダイオードチップ6の
カソードとヒートスプレッダ8の空間距離を十分とるた
めに,ヒートスプレッダ8がダイオードチップ6と接す
る部分を,ダイオードタチップ6と同じ形状,さらに熱
放出を良好にするために下部を広くした形状にしてい
る。
Power semiconductor elements such as diodes and thyristors have a mesa structure. For example, the power semiconductor element is a diode chip, and the anode side of the diode chip, that is, the smaller surface area is soldered to the heat spreader 8. In the case where the heat spreader 8 is attached, the portion where the heat spreader 8 is in contact with the diode chip 6 has the same shape as that of the diode chip 6 and further has a good heat release in order to secure a sufficient spatial distance between the cathode of the diode chip 6 and the heat spreader 8. The lower part has a wider shape.

【0005】[0005]

【発明が解決しようとする課題】このため,ダイオード
チップ6と外部に引き出される端子22との間隔が狭く
なり,端子22とヒートスプレッダ8を半田付けする半
田が,半田付け時に図3の半田26aに示すように上昇
し,ヒートスプレッダ8とダイオードチップ6のカソー
ド間を半田26aにより短絡することがあった。
For this reason, the distance between the diode chip 6 and the terminal 22 led out is reduced, and the solder for soldering the terminal 22 and the heat spreader 8 is replaced with the solder 26a in FIG. As shown in the figure, the heat spreader 8 and the cathode of the diode chip 6 may be short-circuited by the solder 26a.

【0006】[0006]

【課題を解決するための手段】本発明の電力用半導体モ
ジュールは,絶縁板が貼り付けられた金属ベースと,上
記絶縁板上に半田付けされた第1の端子と,上記第1の
端子上にヒートスプレッタを介して半田付けられた電力
用半導体素子と,上記電力用半導体素子に半田付けられ
た第2の端子と,上記金属ベースの端部に接着された樹
脂ケースと,上記樹脂ケース内に上記電力用半導体素子
を封止する封止剤とを備えた電力用半導体モジュールに
おいて,上記第一の端子に,上記ヒートスプレッダが半
田付けられる支持部から立ち上がる部分に,上記第一の
端子に対向する電力用半導体素子の端部より大きい切り
込みを備えたものである。
According to the present invention, there is provided a power semiconductor module comprising: a metal base to which an insulating plate is attached; a first terminal soldered on the insulating plate; A power semiconductor element soldered to the power semiconductor element via a heat spreader, a second terminal soldered to the power semiconductor element, a resin case bonded to an end of the metal base, and A power semiconductor module including a sealant for sealing the power semiconductor element, wherein the first terminal is opposed to the first terminal at a portion rising from a support portion to which the heat spreader is soldered. It is provided with a notch larger than the end of the power semiconductor element.

【0007】すなわち,金属ベースに貼り付けられた絶
縁板上に,第1の端子が半田付けられ,この第1の端子
上には,ヒートスプレッダを介して電力用半導体素子が
半田付けられ,さらにこの電力用半導体素子上に,第2
の端子が半田付けられる。金属ベースの端部には,樹脂
ケースが接着され,この樹脂ケース内に封止剤が注入
れ,電力用半導体素子が封止される。
That is, a first terminal is soldered on an insulating plate attached to a metal base, and a power semiconductor element is soldered on the first terminal via a heat spreader. The second on the power semiconductor device
Terminals are soldered. A resin case is adhered to the end of the metal base, and a sealing agent is injected into the resin case to seal the power semiconductor element.

【0008】さらに,第1の端子は,ヒートスプレッダ
が半田付けられる支持部から立ち上がる部分に,第1の
端子に対向する電力用半導体素子の端部より大きい切り
込みが設けられる。これにより,電力用半導体素子が第
1の端子に半田付けされる際に,半田がヒートスプレッ
ダ以上に上昇することがなく,電力値様半導体素子とヒ
ートスプレッダとが半田により短絡されるのが回避され
る。
[0008] Further, the first terminal is provided with a notch in a portion rising from a support portion to which the heat spreader is soldered, which is larger than an end of the power semiconductor element facing the first terminal. Thus, when the power semiconductor element is soldered to the first terminal, the solder does not rise more than the heat spreader, and the power value-like semiconductor element and the heat spreader are prevented from being short-circuited by the solder. .

【0009】[0009]

【発明の実施の形態】本発明をその1実施の形態を示す
図1及び図2に基づき説明する。図1において,2は金
属ベースであり,この金属ベース2の上に絶縁板4が貼
り付けられている。この絶縁板4上に,第1の外部に引
き出される端子12と,さらにヒートスプレッダ8に半
田付けされた電力用半導体素子,例えばダイオードチッ
プ6が載置されている。また,上記ダイオードチップ6
にも外部に引き出される第2の端子14が載置され,絶
縁板4と端子12とが,また,端子22とヒートスプレ
ッダ8とが,さらにダイオードチップ6と端子14とが
半田付けされている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to FIGS. In FIG. 1, reference numeral 2 denotes a metal base, on which an insulating plate 4 is adhered. On the insulating plate 4, a terminal 12 drawn out to the first outside and a power semiconductor element, for example, a diode chip 6, soldered to the heat spreader 8 are mounted. In addition, the diode chip 6
Also, a second terminal 14 to be drawn out is placed thereon, and the insulating plate 4 and the terminal 12, the terminal 22 and the heat spreader 8, and the diode chip 6 and the terminal 14 are soldered.

【0010】上記金属ベース2の端部に,樹脂ケース1
6がシリコンゴム等により接着され,このケース16内
にシリコンゲル等の封止剤20が注入されてダイオード
チップ6が封止される。この後,端子12,14が貫通
できる穴18aを有する天板18を,樹脂ケース16の
上端部に載置し,電力用半導体モジュール1が形成され
る。上記電力用半導体モジュール1は,従来の電力用半
導体モジュールと同じである。異なる点は,ヒートスプ
レッダ8の下部に半田付けされ外部に引き出される端子
12が,図2に示すように半田付けされる支持部12b
から立ち上がる部分に,端子に対向するダイオードチッ
プ6の端部より大きい切り込み12aを設けたものであ
る。
A resin case 1 is attached to the end of the metal base 2.
6 is adhered by silicon rubber or the like, and a sealing agent 20 such as silicon gel is injected into the case 16 to seal the diode chip 6. Thereafter, the top plate 18 having the hole 18a through which the terminals 12 and 14 can pass is placed on the upper end of the resin case 16 to form the power semiconductor module 1. The power semiconductor module 1 is the same as a conventional power semiconductor module. The difference is that the terminal 12 soldered to the lower portion of the heat spreader 8 and drawn out is connected to the support portion 12b to be soldered as shown in FIG.
A notch 12a which is larger than the end of the diode chip 6 facing the terminal is provided in a portion rising from the terminal.

【0011】すなわち,ダイオードチップと端子との間
隔は,切り込みにより大きくなり,端子12とヒートス
プレッダ8とを半田付けする半田が,半田付け時に図1
の半田10aに示すようにヒートスプレッダにのみ半田
付けられる。従って,ダイオードチップ6とヒートスプ
レッダ8とが半田10aにより短絡することがない。
That is, the distance between the diode chip and the terminal is increased by the cut, and the solder for soldering the terminal 12 and the heat spreader 8 is not soldered as shown in FIG.
Is soldered only to the heat spreader as shown by the solder 10a. Therefore, the diode chip 6 and the heat spreader 8 are not short-circuited by the solder 10a.

【0012】上記実施例では,電力用半導体素子をダイ
オードチップで説明したが,電力用半導体がサイリスタ
チップであってもよい。
In the above embodiment, the power semiconductor element is described as a diode chip, but the power semiconductor may be a thyristor chip.

【0013】[0013]

【発明の効果】本発明の電力用半導体モジュールは,端
子とヒートスプレッダとを半田付けする半田が,ヒート
スプレッダ以上に上昇することがなく,電力用半導体素
子とヒートスプレッダとが半田により短絡されることが
ない。従って,歩留まりのよい電力用半導体モジュール
を得ることができる。
According to the power semiconductor module of the present invention, the solder for soldering the terminals and the heat spreader does not rise more than the heat spreader, and the power semiconductor element and the heat spreader are not short-circuited by the solder. . Therefore, a power semiconductor module with a good yield can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電力用半導体モジュールの一実施の形
態を示す構造図である。
FIG. 1 is a structural view showing one embodiment of a power semiconductor module of the present invention.

【図2】図1の一部品の詳細を示す鳥瞰図である。FIG. 2 is a bird's-eye view showing details of one part of FIG. 1;

【図3】従来の電力用半導体モジュールの構造図であ
る。
FIG. 3 is a structural view of a conventional power semiconductor module.

【図4】図3の一部品の詳細を示す鳥瞰図である。FIG. 4 is a bird's-eye view showing details of one part of FIG. 3;

【符号の説明】[Explanation of symbols]

1 電力用半導体モジュール 2 金属ベース 4 絶縁板 6 電力用半導体素子(ダイオードチップ) 8 ヒートスプレッダ 10a 半田 12 (外部に引き出される第一の)端子 12a 切り込み 14 (外部に引き出される第二の)端子 16 樹脂ケース 18 天板 20 封止剤 DESCRIPTION OF SYMBOLS 1 Power semiconductor module 2 Metal base 4 Insulating plate 6 Power semiconductor element (diode chip) 8 Heat spreader 10a Solder 12 (First drawn out) terminal 12a Cutout 14 (Second drawn out) terminal 16 Resin Case 18 Top plate 20 Sealant

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 絶縁板が貼り付けられた金属ベースと,
上記絶縁板上に半田付けされた第1の端子と,上記第1
の端子上にヒートスプレッタを介して半田付けられた電
力用半導体素子と,上記電力用半導体素子に半田付けら
れた第2の端子と,上記金属ベースの端部に接着された
樹脂ケースと,上記樹脂ケース内に上記電力用半導体素
子を封止する封止剤とを備えた電力用半導体モジュール
において,上記第一の端子に,上記ヒートスプレッダが
半田付けられる支持部から立ち上がる部分に,上記第一
の端子に対向する電力用半導体素子の端部より大きい切
り込みを備えたことを特徴とする電力用半導体モジュー
ル。
A metal base to which an insulating plate is attached;
A first terminal soldered on the insulating plate;
A power semiconductor element soldered on a terminal of the power semiconductor element via a heat spreader; a second terminal soldered to the power semiconductor element; a resin case bonded to an end of the metal base; In a power semiconductor module having a sealing agent for sealing the power semiconductor element in a case, the first terminal is provided on a portion rising from a support portion to which the heat spreader is soldered to the first terminal. A power semiconductor module comprising a notch larger than an end of a power semiconductor element facing the power semiconductor element.
JP7322298A 1998-03-05 1998-03-05 Power semiconductor module Expired - Lifetime JP3408418B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7322298A JP3408418B2 (en) 1998-03-05 1998-03-05 Power semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7322298A JP3408418B2 (en) 1998-03-05 1998-03-05 Power semiconductor module

Publications (2)

Publication Number Publication Date
JPH11251514A true JPH11251514A (en) 1999-09-17
JP3408418B2 JP3408418B2 (en) 2003-05-19

Family

ID=13511941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7322298A Expired - Lifetime JP3408418B2 (en) 1998-03-05 1998-03-05 Power semiconductor module

Country Status (1)

Country Link
JP (1) JP3408418B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013179879A1 (en) 2012-06-01 2013-12-05 住友電気工業株式会社 Semiconductor module and semiconductor module manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013179879A1 (en) 2012-06-01 2013-12-05 住友電気工業株式会社 Semiconductor module and semiconductor module manufacturing method
US9263381B2 (en) 2012-06-01 2016-02-16 Sumitomo Electric Industries, Ltd. Semiconductor module and method for manufacturing the same

Also Published As

Publication number Publication date
JP3408418B2 (en) 2003-05-19

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