JP3299166B2 - Power semiconductor module - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module, and more particularly to an improvement of a top plate.

[0002]

2. Description of the Related Art A conventional power semiconductor module includes, for example, an insulating layer having a copper circuit (wiring pattern) formed on its surface by metallization or the like as shown in FIG.
It is provided on a metal base plate of iron, aluminum or the like. When forming a three-phase full-wave power semiconductor module using the diodes 11 to 16, a diode chip is mounted on the copper circuit and soldered. Further, an external lead terminal is soldered on the electrode of the diode chip or on the copper circuit. Thereafter, the case is placed on the metal base. When placing the case, the external lead-out terminal is pulled out from the terminal opening provided in the case. A window is opened between the external lead terminals, and a sealing material such as silicon gel is injected into the case from the window to seal the diode chip.

FIGS. 3 and 4 are external views of a power semiconductor module. A top plate 23 for preventing intrusion of dust is inserted into the window 22 of a case 21. In the power semiconductor module shown in FIG. 3, the top plate 23 is provided with a barrier 24 that stands vertically between the terminals. By providing the barrier 24, when connecting the external wiring to which the crimp terminal is connected to the terminals 1, 2, 3, 4, and 5, the crimp terminal does not move at the barrier and the work is facilitated. effective. In addition, 20 is a metal base.

In the power semiconductor module shown in FIG. 4, a space between terminals on the top plate 23 is flat. By flattening the space between the terminals, the printed wiring board can be directly attached to the terminals 1, 2, 3, 4, and 5.

[0005]

However, even with the same capacity, depending on the application, a power semiconductor module in which a barrier is provided on the top plate shown in FIG. 3 and a flat top plate as shown in FIG. Designed two types of power semiconductor modules,
You need to prepare.

[0006]

A power semiconductor module according to the present invention comprises a metal base, a power semiconductor chip provided on the metal base, and an external drawer electrically connected to the power semiconductor chip. A terminal, a case adhered to the metal base and having an opening through which the external lead-out terminal is drawn out, and a window between the external lead-out terminals; A power semiconductor module comprising a stop member, a top surface which is engaged with the window, has a barrier provided between the terminals on one surface, and a flat surface on the other surface. A plate is provided.

A power semiconductor chip is provided on a metal base, and an external lead terminal is electrically connected to the power semiconductor chip. A case is bonded to the metal base, and an external lead-out terminal is drawn out from the opening of the case. A sealing material is injected from a window provided between the external lead terminals of the case, and the power semiconductor chip is sealed. A top plate having a barrier on one surface and a flat surface on the other is inserted into the window and sealed to form a power semiconductor module.

When the top plate is inserted into the window with one side having the barrier facing upward, a power semiconductor module with a barrier is obtained. When the top plate is inserted into the window with the other flat surface facing upward, a power semiconductor module having a flat top plate can be obtained.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a power semiconductor module according to the present invention will be described with reference to FIG. 1 showing a plan view and a front view. As shown in FIG. 2, in the power semiconductor module of the present invention, when a three-phase full-wave power semiconductor module is formed by the diodes 11 to 16, ceramics or the like having a copper circuit (wiring pattern) formed on the surface. An insulating layer is provided on a metal base, and a diode chip is mounted on the copper circuit and soldered. Further, an external lead terminal is soldered on the electrode of the diode chip or on the copper circuit. Thereafter, the case is placed on the metal base. When the case is placed, the terminal opening provided in the case is pulled out from the external lead-out terminal. A window is opened between the external lead terminals, and a sealing material such as silicon gel is injected into the case from the opening to seal the diode chip.

The top plate 31 used in the power semiconductor module is formed so as to engage with a window opened between the external lead terminals and to be symmetrical in the vertical direction in FIG. On one surface 31a of the top plate 31, a barrier 32 is arranged between the external lead terminals. The other surface 31b of the top plate 31 is a flat surface. Reference numeral 33 denotes a projection for fixing the case to the top plate. The projection 33 engages with a hole provided in a window of the case, whereby the top plate 1 is fixed to the case.

That is, when the top plate 31 is inserted into the window 22 of the case such that the barrier 32 is on the upper side and the top plate 31 is fixed to the window 22, a power semiconductor module with a barrier is formed. Therefore, since the barrier 2 is formed between the external lead-out terminals, even if the compression terminal is connected to the terminal of the external connection wire, the compression terminal does not move at the barrier at the time of crimping, and the operation is facilitated. There is.

Further, when the top plate 31 is inserted into the window 22 of the case such that the flat surface 31b is at the top and the top plate 31 is fixed to the window, the space between the terminals is flattened. A printed board can be directly attached to the terminal and wiring can be performed via the printed wiring board.

That is, by using the top plate 31, a power semiconductor module with a barrier and a power semiconductor module having a flat surface can be obtained.

In the above embodiment, a diode chip is used as a power semiconductor chip. However, another power semiconductor chip such as a transistor or a thyristor can be used.

[0015]

The power semiconductor module of the present invention has the following features.
By using one top plate, a power semiconductor module with a barrier and a power semiconductor module having a flat surface can be obtained. Therefore, the number of members can be reduced, and the power semiconductor module can be provided at low cost.

[Brief description of the drawings]

FIG. 1 is a plan view and a front view showing an embodiment of a power semiconductor module of the present invention.

FIG. 2 is an electric circuit diagram used in FIG.

FIG. 3 is a plan view of another conventional power semiconductor module.

FIG. 4 is a plan view of another conventional power semiconductor module.

[Description of Signs] 1, 2, 3, 4, 5 Terminal 20 Metal Base 21 Case 22 Window 23, 31 Top Plate 24, 32 Barrier

Claims (1)

(57) [Claims] 1. A metal base, a power semiconductor chip provided on the metal base, an external lead-out terminal electrically connected to the power semiconductor chip, and an external lead-out terminal bonded to the metal base. A power semiconductor module comprising: a case having an opening through which a terminal is drawn out and a window between the external drawing terminals; and a sealing material injected from the window and sealing the power semiconductor chip. A power semiconductor, characterized in that a top plate is provided which is engaged with the window, has a barrier provided between the terminals on one surface, and a flat surface on the other surface. module.